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Power Integrations 1SD536F2-1MBI1600U4C-120 Gate Drivers ONLY for FUJI 1MBI1600U4C-120 module
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Mouser Electronics	1SD536F2-1MBI1600U4C-120					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fuji Electric Co Ltd 1MBI1600U4C-120 Insulated GateBipolarTransistor,1600AI(C),1200VV(BR)CES,N-Chan nel
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NAC	1MBI1600U4C-120		5		1	1 $1187.14 10 $1187.14 100 $1187.14 1000 $1187.14 10000 $1187.14	Buy Now

1MBI1600U Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1MBI1600UC-170		Fuji Electric	IGBT MODULE		Original	PDF

1MBI1600U Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
fuji igbt Abstract: 1mbi1600u4c-170 IGBT- module 1mbi1600u Text: 1MBI1600U4C-170 IGBT Modules IGBT MODULE U series 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply	Original	1MBI1600U4C-170 fuji igbt 1mbi1600u4c-170 IGBT- module 1mbi1600u	PDF
1MBI1600UC-170 Abstract: ED-4701 M142 MT5F12959 Text: SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE 1MBI1600UC-170 MS5F 5928 Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka Y.Seki MS5F5928 1 13 H04-004-07b R e v i s e d Date Classification Sep.-30-’04 Enactment Ind. Content R e c o r d s	Original	1MBI1600UC-170 MS5F5928 H04-004-07b H04-004-06b 1MBI1600UC-170 H04-004-03a ED-4701 M142 MT5F12959	PDF
1MBI1600U4C-120 Abstract: igbt fuji 1MBI1600U4C TERMINAL M4 1mbi1600u Text: 1MBI1600U4C-120 IGBT Modules IGBT MODULE U series 1200V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply	Original	1MBI1600U4C-120 1MBI1600U4C-120 igbt fuji 1MBI1600U4C TERMINAL M4 1mbi1600u	PDF
1MBI1600UC-120 Abstract: ED-4701 M142 MS5F5925 MT5F12959 IC-320 1mbi1600u Text: SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE 1MBI1600UC-120 MS5F 5925 Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka Y.Seki MS5F5925 1 13 H04-004-07b R e v i s e d Date Classification Sep.-30-’04 Enactment Ind. Content R e c o r d s	Original	1MBI1600UC-120 MS5F5925 H04-004-07b H04-004-06b 1MBI1600UC-120 H04-004-03a 12trial ED-4701 M142 MS5F5925 MT5F12959 IC-320 1mbi1600u	PDF
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28	PDF
fuji igbt transistor modules Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200 Text: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high	Original		PDF
2MBI450U4E-120 Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！	Original	max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120	PDF