Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1K X4 STATIC RAM Search Results

    1K X4 STATIC RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    1K X4 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marvell 88e6065

    Abstract: 88e6065 88e6035 link street marvell 88e6065 MARVELL CONFIDENTIAL, under NDA 88E6035 Marvell 88E6031 88E6061 Marvell+88e6065 Marvell PHY register map
    Text: gh t, pa ct t, Im pa ct 1k3md8dxmnckz-etgax43r * Memec Headquarters - Unique Tech, Insight, Impact * UNDER NDA# 12101050 Doc. No. MV-S102922-00, Rev. -March 21, 2006 Im nc kz M -et AR ga VE x4 LL 3r * CO Me NF me ID c ( EN H TI ead AL q , U uar ND ter ER s)


    Original     		PDF 1k3md8dxmnckz-etgax43r MV-S102922-00, 88E6065/88E6035 Marvell 88e6065 88e6065 88e6035 link street marvell 88e6065 MARVELL CONFIDENTIAL, under NDA 88E6035 Marvell 88E6031 88E6061 Marvell+88e6065 Marvell PHY register map

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    DM85

    Abstract: No abstract text available
    Text: TTL l/O-MOS Static RAM Selection Guide Pins Access Time Temperature Range TS 16 50 — 55°C to + 125°C TS 16 30 — 55°C to + 1 25°C 1 6 x4 TS 16 35 0”C to +70°C DM74S189A 16x4 TS 16 25 0°C to + 70°C DM74S289 16 x4 OC 16 35 0°Cto + 70”C 93L415A


    OCR Scan     		PDF DM54S189 DM54S189A DM74S189 DM74S189A DM74S289 93L415A 93L422A 93L425A NMC2147H NMC2147H-3 DM85

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    256X4

    Abstract: 1024x4 AM2168 Am91L22
    Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active


    OCR Scan     		PDF Am91L22-35 L22-45 Am9122-60 256x4 Am2147 Am2147-45 Am2147-65 Am2147-70 Am21L47-45 Am21147 1024x4 AM2168 Am91L22

    88516b

    Abstract: mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF
    Text: FUJITSU MIC ROE LE CT RON IC S ^71 D • 374^7^2 0004570 0 « Fi ll T-90-60 April 1988 Edition 3.0 4-Bit Microcontrollers and Peripherals Table 1: FU JIT SU 4-BIT MCU F A M IL Y Process/ Series NMOS MB 8840 Series CMOS MB 8850/H MB 8850B Series CMOS MB 88200/H


    OCR Scan     		PDF T-90-60 128x4 8841HM/-PSH 8842M/-PSH 8843M/-PSH 8844M/-PSH DIP-42P-M01/M02 DIP-28P-M02/M03 88516b mb88515b MB88511 MB88411 88202-P BB413 MB88201 256X4 MB88515B-P-SH MB88541-PF

    Untitled

    Abstract: No abstract text available
    Text: Integrated D evice Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • T h e ID T 1 0 A 4 7 4 , ID T 1 0 0 A 4 7 4 and 1 0 1 A 4 7 4 are 4 ,0 96-bit


    OCR Scan     		PDF IDT10A474 IDT100A474 IDT101A474 96-bit IDT10A474, IDT100A474, 10A474 ECL-10K 100A474

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    l00a

    Abstract: ECL-10K
    Text: In tegrated D e v ice T ech n o lo gy, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • The ID T 10A 474, ID T 1 0 0 A 4 7 4 and 1 0 1A 474 are 4,096-bit


    OCR Scan     		PDF IDT10A474 IDT100A474 IDT101A474 1024-words 600mW IDT10A474, 101A474 096-bit l00a ECL-10K

    LA 8512

    Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER


    OCR Scan     		PDF 100ns 16Bit 32Blt 18Bit 36Bit 200ns 250ns LA 8512 samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory

    Untitled

    Abstract: No abstract text available
    Text: 3. Ordering Information DRAM SIMM NUMBERING SYSTEM 9 10 11 12 13 14 15 16 KM M AA BBB C DDD E F G H I J K L M - N N j SAMSUNG Memory I J Speed Lead Finish & Customer Module O nlyx32orx33 PCB Memory Type & Edge Connector Number of Components [ Organization


    OCR Scan     		PDF nlyx32orx33

    512x 8 ROM

    Abstract: General Purpose Mask Programmable ROM S1985 LSA2010 1K x 8 static ram 2k x 4 RAM 1kx8 static ram 512X16 512x64 application of programmable array logic
    Text: LSA 2010 l s c TWo M icron H CM O S Structured A rra y 000979 LSI L O G IC C O R P O R A T IO N TW General Description The LSA201G is a member of the 2-micron drawn, 1.4-micron effective HCMOS family of Structured Arrays offered by LSI LOGIC Corporation. These very


    OCR Scan     		PDF LSA2010 LSA201G 512x120 512x96 512x64 512x32 512x16 512x8 Telex-172153 767/1185/20K/IM/J 512x 8 ROM General Purpose Mask Programmable ROM S1985 1K x 8 static ram 2k x 4 RAM 1kx8 static ram application of programmable array logic

    samsung KLM ordering information

    Abstract: samsung klm
    Text: DRAM DIMM NUMBERING SYSTEM 12 KM M 3 72 E 4 1 0 A T T SAMSUNG 13 1 - L 6 M e m o ry Speed M o d u le M e m o ry T y p e & E d g e C o n n e c to r Power D a ta B it P C B R e v is io n M ode/F:e a tu re & P ro c e s s ¡¡•O peratin g V o lta g e P a c k a g e T y p e & L e a d F in is h


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 14E I QES7S2Ö 0G27SSM Am2148/Am2149 Am21 L48/Am21 L49 fi| Advanced Micro Devices 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148


    OCR Scan     		PDF 0G27SSM Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 OP000741

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    LC3514AD

    Abstract: 3044B LC66506B LC5866H 512X4 LC5732 LC66516B LC66E516 LC66P516 LC3514AL
    Text: ' ' " " ' y Case _ • P in s& Packag .„ V a r i a t i o n ' ^ Num ber 1 LC 6 6 5 16 B 2 3 Applications 1 ‘ '3 N o . 3071 ' High*Performance . Q IP 64A 3057 . ¡Type D IC with 64S LC 6 6 P 5 16 M a x .:; t M at Voltage ; t ' '- ; ; : Piggyback.


    OCR Scan     		PDF LC66516B 512X4 LC66P65XX LC66E516 LC66506B/ 508B/512B/516B LC66P516 LC3514AD 3044B LC66506B LC5866H LC5732 LC66516B LC3514AL

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    LC51

    Abstract: power LC51 bootloader TMS320 TMS320C5X addressing modes load and store instructions of TMS320C5x BQFP 100 PACKAGE tms320c5x speech TMS320C5x clock generation program lc56 TMS320C5x waveform generations
    Text: C hapter 1 Introduction This user’s guide discusses the TMS320C5x generation of fixed-point digital signal processors DSPs in the TMS320 family. The ’C5x DSP provides im­ proved performance over earlier 'C1x and ’C2x generations while maintaining


    OCR Scan     		PDF TMS320C5x TMS320 TMS320C50/LC50 TMS320C51/LC51 TMS320C52/LC52 TMS320C53/LC5ion 100-pin 128-pin 132-pin LC51 power LC51 bootloader TMS320 TMS320C5X addressing modes load and store instructions of TMS320C5x BQFP 100 PACKAGE tms320c5x speech TMS320C5x clock generation program lc56 TMS320C5x waveform generations

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001