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    1K X 4 RAM Search Results

    1K X 4 RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA55DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413204YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413205YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA25P Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    1K X 4 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SH67P33CX

    Abstract: No abstract text available
    Text: SH67P33C OTP 1K 4-bit Micro-controller Features SH6610C-Based Single-Chip 4-bit Micro-Controller ROM: 1K X 16 bits RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory Operation Voltage: 1.8V - 3.6V Typically 3.0V 16 CMOS Bi-directional I/O pins and 1 CMOS input pin


    Original     		PDF SH67P33C SH6610C-Based 400kHz 16/fOSC) SH67P33CX

    SH66K33A

    Abstract: No abstract text available
    Text: SH66K33A MASK 1K 4-bit Micro-controller Features SH6610C-Based Single-Chip 4-bit Micro-Controller ROM: 1K X 16 bits RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory Operation Voltage: 1.8V - 3.6V Typically 3.0V 16 CMOS Bi-directional I/O pins and 1 COMS input pin


    Original     		PDF SH66K33A SH6610C-Based 400kHz SH67P33A) 16/fOSC) SH66K33A

    256K x 8 SRAM CY7C128A SRAM

    Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
    Text: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25


    Original     		PDF CY7C122 CY7C150 CY7C130/31 CY7C128A CY6116A MIL-PRF-38535. MIL-STD-883D 22-pin 300-mil 256K x 8 SRAM CY7C128A SRAM 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10

    Untitled

    Abstract: No abstract text available
    Text: SH67P33C OTP 1K 4-bit Micro-controller Features „ SH6610C-Based Single-Chip 4-bit Micro-Controller „ ROM: 1K X 16 bits „ RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory „ Operation Voltage: 1.8V - 3.6V Typically 3.0V „ 16 CMOS Bi-directional I/O pins and 1 CMOS input pin


    Original     		PDF SH67P33C SH6610C-Based 400kHz 16/fOSC)

    Untitled

    Abstract: No abstract text available
    Text: SH67P847 OTP 1K 4-bit micro-controller with 10-bit SAR ADC Features „ SH6610C-Based Single-Chip 4-bit Micro-Controller With 10-bit SAR ADC „ OTP ROM: 1K X 16bits „ RAM: 124 X 4bits - 28 System Control Registers - 96 Data Memory „ Operation Voltage: - fOSC =16MHz, VDD = 3.3V - 5.5V


    Original     		PDF SH67P847 10-bit SH6610C-Based 16bits 16MHz, 16MHz 16/fOSC)

    Untitled

    Abstract: No abstract text available
    Text: TM58P11 1. Feature ROM: 1k 1K x 14 bits RAM: 41 (41 x 8 bits) Internal multi-band RC oscillator with programmable calibration, the band ranges include 6M, 4M, 910K and 32K. STACK: 4 Levels Support On-chip programming circuit I/O ports: 9 I/O Pads and 1 input Pad


    Original     		PDF TM58P11 910Khz, 32Khz 100pf 300pf

    Untitled

    Abstract: No abstract text available
    Text: TM58P11 1. Feature ROM: 1k 1K x 14 bits RAM: 41 (41 x 8 bits) Internal multi-band RC oscillator with programmable calibration, the band ranges include 6M, 4M, 910K and 32K. STACK: 4 Levels Support On-chip programming circuit I/O ports: 9 I/O Pads and 1 input Pad


    Original     		PDF TM58P11 910Khz, 32Khz 100pf 300pf

    CY7C4801

    Abstract: CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 QA08 IDT728X1
    Text: 4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		PDF CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4201/4211/4221/ CY7C4801 CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 QA08 IDT728X1

    CY7C4801

    Abstract: CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851
    Text: CY7C4831/4 1 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		PDF CY7C4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4801 CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851

    CY7C4831

    Abstract: CY7C4841 CY7C4851 CY7C4801 CY7C4811 CY7C4821
    Text: CY7C4831/4 1 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		PDF CY7C4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4831 CY7C4841 CY7C4851 CY7C4801 CY7C4811 CY7C4821

    CY7C4811

    Abstract: CY7C4821 CY7C4831 CY7C4841 CY7C4851 CY7C4801
    Text: CY7C4831/4 1 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		PDF CY7C4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 CY7C4801

    PD650C

    Abstract: PD80C49C PD7801G UPD650C 64x8 PD650 uCOM84 MPD7801G UPD80C48C PD7800G
    Text: • 4-Bit Single-Chip M icrocom puters Process Supply Voltage V Instruction Time ROM x8 RAM I/O CMOS +5 10 2k 1k 9 6 x4 6 4 x4 4 bit X 8 3 bit 42-pin DIP /(PD652C 1k 3 2 x4 4 bit X 5 1 bit 28-pin DIP /íPD7502G ííPD7503G 2k •4k 128x4 224 x 4 4 bit X 5


    OCR Scan     		PDF COM43C uPD650C uPD651C uPD652C uPD7502G uPD7503G uPD7506C COM7500 uPD7507SC /iPD7507C PD650C PD80C49C PD7801G 64x8 PD650 uCOM84 MPD7801G UPD80C48C PD7800G

    RJ017

    Abstract: 2Kx36 LL014
    Text: 1K x 36 2K x 36 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1011 IDT7M1012 FEATURES DESCRIPTION • T h e ID T 7 M 1 0 1 1/1 012 are 1K/2K x 36 high speed C M O S Dual-Port static RAM modules constructed on a co-fired ceram ic substrate using 4 ID T 7 0 1 0 1K x 9 Dual-Port RAMs


    OCR Scan     		PDF IDT7M1011 IDT7M1012 121-pin IDT7M1011/1012 IDT7010 IDT7M1011/1DT7M1012 MIL-STD883, 7M1011 7M1012 RJ017 2Kx36 LL014

    e/MA3110

    Abstract: No abstract text available
    Text: IM S 1 2 2 3 i:. : !•■■■■ '■■■ cmos High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 1K x 4 Bit Organization • 25, 35, and 45 nsec Access Times


    OCR Scan     		PDF 45nsec 300-mil IMS1223 IMS1223 e/MA3110

    IMS1223P-25

    Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
    Text: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1223 45nsec 300-mll IMS1223 IMS1223P-25 IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45

    122325

    Abstract: No abstract text available
    Text: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1223 45nsec 300-mil IMS1223 AdditionaIMS1223P-45 IMS1223S-45 122325

    rj017

    Abstract: No abstract text available
    Text: IN T E GR AT ED DEVIC E 3fiE » • 4 Ô 2 S 77 1 DDG'lOig S B 1K X 36 2Kx36 CMOS DUAL-PORT STATIC RAM MODULE |cfty Integrated Dei/ice Technology, Inc. IDT PRELIMINARY IDT7M1011 J J ? 012 S 3- \4 FEATURES DESCRIPTION • High density 1K/2K x 36 CM OS Dual-Port Static RAM


    OCR Scan     		PDF 2Kx36 IDT7M1011 121-pin IDT7M1011/1DT7M1012 4A25771 MIL-STD883, 7M1011 7M1012 rj017

    United Technologies Mostek

    Abstract: MOSTEK MEMORY MK4801 MK4801A-1 17dq7 MK4801A MK4801A-2 MK4801A-3 MK4801A-4 MOSTEK ROM
    Text: UNITED TECHNOLOGIES % l# MOSTEK ^ s \l// MEMORY COMPONENTS 1K x 8-BIT STATIC RAM M K4801A P/J/N -1 /2/3/4 FEATURES □ MKB version screened to MIL-STD-883 □ Static operation Part No. □ Organization: 1K x 8 bit RAM JEDEC pinout R /W Access Time R /W Cycle Time


    OCR Scan     		PDF MK4801A United Technologies Mostek MOSTEK MEMORY MK4801 MK4801A-1 17dq7 MK4801A-2 MK4801A-3 MK4801A-4 MOSTEK ROM

    buzzer circuit

    Abstract: 32.768 MHZ OSCILLATOR NOT GIVING OUTPUT QFP160-P-2828 SM3513 sis8 dio8
    Text: SHARP SM3513 4-Bit Single-Chip Microcomputer Data Sheet FEATURES • ROM Capacity - Program ROM 24K x 23-bits - Character ROM 6 x 8 x 256-bits - Constant ROM 1K x 4-bits • RAM Capacity - Working RAM 256 x 4-bits - Display RAM 74 x 32-bits - Data RAM 512 x 8-bits


    OCR Scan     		PDF SM3513 23-bits 256-bits 32-bits buzzer circuit 32.768 MHZ OSCILLATOR NOT GIVING OUTPUT QFP160-P-2828 SM3513 sis8 dio8

    buzzer circuit

    Abstract: SM3511 KL lcd
    Text: SHARP Data Sheet SM3511 4-Bit Single-Chip Microcomputer FEATURES • ROM Capacity - Program ROM 24K x 23-bits - Character ROM 6 x 8 x 256-bits - Constant ROM 1K x 4-bits • RAM Capacity - Working RAM 256 x 4-bits - Display RAM 98 x 32-bits - Data RAM 512 x 8-bits


    OCR Scan     		PDF SM3511 23-bits 256-bits 32-bits buzzer circuit SM3511 KL lcd

    LH5101

    Abstract: LH5101-30 intel 5101 5101 static ram
    Text: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:


    OCR Scan     		PDF LH5101 22-pin, 300-mil 28-PIN LH5101 LH5101-30 LH5101-30 intel 5101 5101 static ram

    1K x 4 static ram ttl

    Abstract: lh5114
    Text: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)


    OCR Scan     		PDF LH5114 LH5114H 18-pin, 300-mil 14H-3 LH5114H-15 1K x 4 static ram ttl lh5114

    256X4

    Abstract: 1024x4 AM2168 Am91L22
    Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active


    OCR Scan     		PDF Am91L22-35 L22-45 Am9122-60 256x4 Am2147 Am2147-45 Am2147-65 Am2147-70 Am21L47-45 Am21147 1024x4 AM2168 Am91L22

    Untitled

    Abstract: No abstract text available
    Text: 1K x 36 2K x 36 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1011 IDT7M1012 FEATURES DESCRIPTION • T h e ID T 7 M 1 0 1 1/1 012 are 1K/2K x 3 6 high speed C M O S D ual-Port static RAM modules constructed on a co-fired ceram ic substrate using 4 ID T 7 0 1 0 1 K x 9 Dual-Port RAMs


    OCR Scan     		PDF IDT7M1011 IDT7M1012 IDT7M1011/IDT7M1012