b20 100 transister
Abstract: Z1312 sis650 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill
Text: A B C D E IERR is output pin , so if SIS650 no this input , it can open. GTL+_STPCLK# R32 1K GTL+_SMI# R393 1K 200 GTL+_CPUSLP# R417 1K 200 GTL+_INIT# R33 1K 200 GTL+_IGNNE# R75 1K 200 GTL+_A20M# R396 1K 200 GTL+_IERR# R34 1K GTL+_DPSLP# R119 1K 200 GTL+_INTR
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SIS650
N243SAR31129
N243SA
b20 100 transister
Z1312
U57A
C816
C817
ac345
QT1608RL060HC-3A
M961
uniwill
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GPIO14
Abstract: CON5X2 STPS15L60 GPIO11 CON10 con5x CON17X2 STD12NF06L STPS3L60U gpio5
Text: 5 4 3 2 1 Start up configuration J2 Vsupply GND R1 R2 JP2 1 D1 Vsupply 1 2 3 2 3 2 3 2 JP3 1 4.7K 4.7K LED JP4 1 V3v3 J11 1K C19 C20 R16 1K 1nF 1nF J3 R17 Gpio1 Gpio2 GND R15 1K +3_3VS 1 2 3 DC1_plus DC1_minus 1 2 Gpio6 Gpio7 Gpio11 Gpio12 C31 100nF CON3 Gpio13
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Gpio11
Gpio12
100nF
Gpio13
Gpio14
BC846B
BSP51
680nF
330nF
GPIO14
CON5X2
STPS15L60
GPIO11
CON10
con5x
CON17X2
STD12NF06L
STPS3L60U
gpio5
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24LCS62
Abstract: 24LCS61
Text: M 24LCS61/24LCS62 1K/2K Software Addressable I2C Serial EEPROM PRODUCT OFFERING PACKAGE TYPES Voltage Range Software Write Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half Device PDIP NC 1 NC 2 EDS 3 Vss 4 FEATURES
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24LCS61/24LCS62
24LCS61
24LCS62
24LCS61/62
DS21226A-page
24LCS62
24LCS61
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24LCS62
Abstract: 24AA00 24C00 24LC00 24LCS61
Text: 24LCS61/24LCS62 1K/2K Software Addressable I2C Serial EEPROM PRODUCT OFFERING PACKAGE TYPES Array Size Voltage Range Software Write Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half PDIP FEATURES 1 NC 2 EDS 3 Vss 4 8
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24LCS61/24LCS62
24LCS61
24LCS62
24LCS61/62
24LCS62
24AA00
24C00
24LC00
24LCS61
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24LCS62
Abstract: 24AA00 24C00 24LC00 24LCS61
Text: 24LCS61/24LCS62 1K/2K Software Addressable I2C Serial EEPROM PRODUCT OFFERING PACKAGE TYPES Array Size Voltage Range Software Write Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half PDIP FEATURES 1 NC 2 EDS 3 Vss 4 8
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24LCS61/24LCS62
24LCS61
24LCS62
24LCS61/62
DS21226C-page
24LCS62
24AA00
24C00
24LC00
24LCS61
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24LCS62
Abstract: No abstract text available
Text: M 24LCS61/24LCS62 1K/2K Software Addressable I2C Serial EEPROM PRODUCT OFFERING PACKAGE TYPES Voltage Range Software Write Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half PDIP NC 1 NC 2 EDS 3 Vss 4 FEATURES 1 NC Vcc
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24LCS61
24LCS62
24LCS61/24LCS62
24LCS61/62
DS21226B-page
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DS2431
Abstract: DS2430A AN3697 APP3697
Text: Maxim > App Notes > 1-Wire DEVICES Keywords: DS2431, DS2430A, EEPROM, 1K-bit, replacement Dec 19, 2005 APPLICATION NOTE 3697 Transition Guide: Replacing the DS2430A with the DS2431 Abstract: The DS2431 is an advanced 1-Wire® 1k-bit EEPROM replacement device for the older 256-bit DS2430A. This
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DS2431,
DS2430A,
DS2430A
DS2431
DS2431
256-bit
DS2430A.
AN3697
APP3697
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1W ZENER DIODE
Abstract: socket s1 J10 DIODE jack j4 Zener 5.1V ZENER DIODE 5.1V LM4734 04555
Text: Bill of Materials for LM4734 Reference PCB 12/04/03 Symbol Value Recommended Tolerance Type/Description RIN1, RIN2, RIN3 33kΩ 5% ¼ Watt RB1, RB2, RB3 1kΩ 1% ¼ Watt RF1, RF2, RF3 20kΩ 1% ¼ Watt Ri1, Ri2, RI3 1kΩ 1% ¼ Watt RSN1, RSN2, RSN3 4.7Ω
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LM4734
O-220
1W ZENER DIODE
socket s1
J10 DIODE
jack j4
Zener 5.1V
ZENER DIODE 5.1V
04555
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1W ZENER DIODE
Abstract: socket s1 LM4782 banana socket J10 DIODE Zener 5.1V zener diode 1 watt ZENER DIODE 5.1V diode s1 tolerance j12
Text: Bill of Materials for LM4782 Reference PCB 12/04/03 Symbol Value Recommended Tolerance Type/Description RIN1, RIN2, RIN3 33kΩ 5% ¼ Watt RB1, RB2, RB3 1kΩ 1% ¼ Watt RF1, RF2, RF3 20kΩ 1% ¼ Watt Ri1, Ri2, RI3 1kΩ 1% ¼ Watt RSN1, RSN2, RSN3 4.7Ω
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LM4782
O-220
1W ZENER DIODE
socket s1
banana socket
J10 DIODE
Zener 5.1V
zener diode 1 watt
ZENER DIODE 5.1V
diode s1
tolerance j12
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200B
Abstract: No abstract text available
Text: 24LCS41A 1K/4K 2.5V Dual Mode, Dual Port I2C Serial EEPROM PACKAGE TYPE PDIP VCLK 2 VSS 3 MSDA 4 8 DSDA 7 DWP 6 VCC 5 MSCL VCLK DSCL DWP DDC Monitor Port DSDA EDID Table 1K-Bit The Microchip Technology Inc. 24LCS41A is a dualport 128 x 8 and 512 x 8-bit Electrically Erasable PROM
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24LCS41A
24LCS41A
DS21175A-page
200B
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ICT PRC A8
Abstract: ict prc 200B 24C01C
Text: M 24C01C 1K 5.0V I2C Serial EEPROM FEATURES PACKAGE TYPES PDIP/SOIC 1 A1 2 A2 3 Vss 4 8 Vcc 7 TEST 6 SCL 5 SDA TSSOP 1 2 3 4 24C01C A0 A1 A2 VSS DESCRIPTION The Microchip Technology Inc. 24C01C is a 1K bit Serial Electrically Erasable PROM with a voltage range
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24C01C
24C01C
DS21201A-page
ICT PRC A8
ict prc
200B
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200B
Abstract: 24C01C RG41
Text: 24C01C 1K 5.0V I2C Serial EEPROM FEATURES PDIP/SOIC 1 A1 2 A2 3 Vss 4 8 Vcc 7 TEST 6 SCL 5 SDA TSSOP A0 A1 1 A2 VSS 3 4 24C01C DESCRIPTION The Microchip Technology Inc. 24C01C is a 1K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single
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24C01C
24C01C
DS21201C-page
200B
RG41
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200B
Abstract: 24C01C RG41
Text: 24C01C 1K 5.0V I2C Serial EEPROM FEATURES PDIP/SOIC 1 A1 2 A2 3 Vss 4 8 Vcc 7 TEST 6 SCL 5 SDA TSSOP A0 A1 1 A2 VSS 3 4 24C01C DESCRIPTION The Microchip Technology Inc. 24C01C is a 1K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single
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24C01C
24C01C
DS21201C-page
200B
RG41
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smd resistor 151
Abstract: 1N4004 smd EXCELSA391 LI 1806 E 151 R ECS-TOJY106R 1N4004DICT-ND P9818BK-ND surface mount opto counter SMD 0805 capacitor zener smd diode 200V 1W
Text: ANALOG DEVICES R1, R2,R3, R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15, R16 R17, R23 R18 R19, R20 R21 R22 C1, C2, C3, C4 C5, C13 1kΩ, 1%, 1/8W SMD 1206 Resistor Surface Mount, Panasonic ERJ-8ENF1001 Digi-Key No. P 1K FCT-ND 300kΩ, 5%, ½W, 200V SMD 2010 Resistor Surface Mount,
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ERJ-8ENF1001
ERJ-12ZY304
ERJ-14YJ154
ERJ-8GEYJ753
1/16W,
ERJ-2GEJ393
140Joules
S20K275
ERJ-14RSJ0R1,
smd resistor 151
1N4004 smd
EXCELSA391
LI 1806 E 151 R
ECS-TOJY106R
1N4004DICT-ND
P9818BK-ND
surface mount opto counter
SMD 0805 capacitor
zener smd diode 200V 1W
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24LCS62
Abstract: No abstract text available
Text: M 24LCS61 /24LCS62 ic r o c h ip 1K/2K Software Addressable I2C Serial EEPROM PRODUCT OFFERING PACKAGE TYPES Array Size Voltage Range Software Write Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half Device PDIP FEATURES
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24LCS61
/24LCS62
24LCS62
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Untitled
Abstract: No abstract text available
Text: MT52C9010 1K x 9 FIFO ['•'IICRON FIFO 1K x 9 FIFO FEATURES Very high speed: 1 5,20, 25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5m W typ. standby ; 350mW typ. (active) TTL compatible inputs and outputs
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MT52C9010
350mW
28-Pin
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24LCS62
Abstract: No abstract text available
Text: M 24LCS61 /24LCS62 ic r o c h ip 1K/2K Software Addressable I2C Serial EEPROM PACKAGE TYPES PRODUCT OFFERING Array Size Device Voltage Range Software W rite Protection 24LCS61 1K bits 2.5V-5.5V Entire Array 24LCS62 2K bits 2.5V-5.5V Lower Half PDIP FEATURES
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OCR Scan
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24LCS61
/24LCS62
24LCS61
24LCS62
24LCS62
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Untitled
Abstract: No abstract text available
Text: 1K x 36 2K x 36 C M O S DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1011 IDT7M1012 FEATURES DESCRIPTION • High density 1K/2K x 36 CMOS Dual-Port Static RAM modules • Fast access times — Commercial: 25, 30, 40, 50, 60ns — Military: 30, 40, 50, 60, 70ns
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IDT7M1011
IDT7M1012
IDT7M1011/1012
IDT7010
T7012
IDT7M1011/IDT7M1012
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e/MA3110
Abstract: No abstract text available
Text: IM S 1 2 2 3 i:. : !•■■■■ '■■■ cmos High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 1K x 4 Bit Organization • 25, 35, and 45 nsec Access Times
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45nsec
300-mil
IMS1223
IMS1223
e/MA3110
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T52C
Abstract: No abstract text available
Text: MICRON M T52C 9012 1K x 9 FIFO FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typical (standby ; 350mW typical
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350mW
28-Pin
MTS2C9012
10-BYTE
MT52C9012
T52C
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IMS1223P-25
Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
Text: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times
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IMS1223
45nsec
300-mll
IMS1223
IMS1223P-25
IMS1223P-35
IMS1223P-45
IMS1223S-25
IMS1223S-35
IMS1223S-45
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122325
Abstract: No abstract text available
Text: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times
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IMS1223
45nsec
300-mil
IMS1223
AdditionaIMS1223P-45
IMS1223S-45
122325
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Untitled
Abstract: No abstract text available
Text: MT52C9012 1K x 9 FIFO |V |C =R O N FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • • • • • Very high speed: 15, 20, 25 and 35ns access High-perform ance, low-power CM OS process Single +5V ±10% supply Low power: 5mW typical standby ; 350m W typical
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OCR Scan
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PDF
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MT52C9012
28-Pin,
10-BYTE
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I1993
Abstract: No abstract text available
Text: MT52C9010 1K x 9 FIFO |U | =R O N 1K x 9 FIFO FIFO FEATURES • • • • • • • • • • • PIN A SSIG N M E N T (Top View Very high speed: 15, 20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typ. (standby); 350mW typ. (active)
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OCR Scan
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PDF
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MT52C9010
350mW
28-Pin
T52C9010
MT52C901Q
I1993
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