diode B14A
Abstract: B14A equivalent B14A B14A diode 207B MCF5307 asynchronous dram 1J20C
Text: 06/2000 Rev. 4.0 Semiconductor Products Sector MCF5307 Errata to MCF5307 Preface This document identiÞes implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 UserÕs Manual. Please
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MCF5307
MCF5307
0H55J,
1H55J,
1J20C,
diode B14A
B14A equivalent
B14A
B14A diode
207B
asynchronous dram
1J20C
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2H0250
Abstract: 1J0280 49LW080 2S0247
Text: PAGE 1 OF 6 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49LW080 DATA HUB FLASH RELIABILITY DATA* - 121°C/15PSG PRESSURE POT TEST - 131°/85% RELATIVE HUMIDITY HAST TEST - EXTENDED TEMPERATURE CYCLE - 125°C DYNAMIC LIFETEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC)
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AT-49LW080
C/15PSG
AT-49LW080
1J0207
1J2088
1J0240
2E5475
2E0238
2H0250
1J0280
49LW080
2S0247
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TSOP 173 g
Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
Text: PAGE 1 OF 21 ATMEL COPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C040 CMOS EPROM RELIABILITY DATA* -125°C DYNAMIC OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT
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AT-27C040
MIL-M-38535
AT-27C1024
AT-27C512R
AT-27C010
AT-27C040
12C/TSOP/SOIC/PDIP
6D9702
8B9832
TSOP 173 g
5H9602
6c9648
3b1326
5G9551
6F9627
4c19
3C1660
atmel 906
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diode B14A
Abstract: B14A equivalent B14A 1J20C B14A diode MCF5307 MCF5307ER asynchronous dram "Overflow detection"
Text: Freescale Semiconductor Device Errata MCF5307 Device Errata This document identifies implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 User’s Manual. Please check the WWW
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MCF5307
0H55J,
1H55J,
1J20C,
2J20C.
diode B14A
B14A equivalent
B14A
1J20C
B14A diode
MCF5307ER
asynchronous dram
"Overflow detection"
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diode B14A
Abstract: B14A equivalent B14A diode B14A 1J20 1H55J 207B EDGESEL MCF5307 asynchronous dram
Text: 12/10/1999 Rev. 3.1 Semiconductor Products Sector MCF5307 Errata to MCF5307 Preface This document identiÞes implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 UserÕs Manual. Please
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Original
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PDF
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MCF5307
MCF5307
0H55J,
1H55J,
1J20C,
diode B14A
B14A equivalent
B14A diode
B14A
1J20
1H55J
207B
EDGESEL
asynchronous dram
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49LH002
Abstract: 49LH004 AT49LH004 175C AT49LH002 49LW080
Text: AT49LH002/004 Product Qualification Database Rev 1.1 September, 2003 Table of Contents Topics • AT49LH002/004 Features • Package Pin Configuration • Die Processing and Flash Memory Cell Structure • Device Physical Layout • Assembly Packaging Summary
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AT49LH002/004
AT49LH002/004
100ns)
AT49LH004
AT49LH002
150ns)
49LH002
49LH004
AT49LH004
175C
AT49LH002
49LW080
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J1CP
Abstract: 6CW 54
Text: 63 W Sing Is Output LED PowerSupply P L C - 6 0 • F O iU U ffc : ■ U rivtraal A C n p u l I F„ series 'an g* ■ Fii i- sa a t d i A3lie i i s t w 1i t i n m a sock slyleo l l.<; 1 3 1 1 ■ Btii ' -tn Qon lan eurr*n ba llin g cinsi : ■ A d ^ ia t M e o u if u i w t& B e and o m th ii le w
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115VAC]
12fKHii
23QVAC)
Ta25r
J1CP
6CW 54
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Untitled
Abstract: No abstract text available
Text: 2 7 * CM * Ll. 0 0 NOTES oo — * * L u CO £ LD Coin 0 . 2 - (CUT OFF TAB LENGTH) .00 8 i_n Q o APPLICABLE HOUSING : 5559 SERIES 2. MATES WITH TERMINAL : 5 5 56 SERIES 5. (METRIC) VALUES SHOWN GOVERN OVER ENGLISH CONVERSION VALUES. ( 1.9) 4. GENERAU TOLERANCES OF ENGLISH CONVERSION VALUES : ±.0 08 INCH
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SD-5558-002
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18AV
Abstract: No abstract text available
Text: i Features Single Voltage for Read find Write: 2.7V to 3.6V Fast Read Access Time -1 SO ms internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time *10 seconds Byte-by-Byte Programming - 30 iis/Byte Typical Hardware Oats Protection
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AT49BV040
10CJI04)
32-Lead,
MO-142
42-Ball,
8KX-318}
18AV
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Untitled
Abstract: No abstract text available
Text: KM791001J CMOS SRAM 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.) KM791001J-15:180mA (Max.) KM791001J-20:150mA (Max.)
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KM791001J
KM791001J-12:
200mA
KM791001J-15
180mA
KM791001J-20
150mA
KM791001J
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1j17
Abstract: Mil-T-23648 Thermistor NTC 20K Ohm 1J20 NTC thermistor 5k ohm Dale Electronics thermistors 1J26 1J112 1J15 1j29
Text: A COMPANY MODEL 1J NTC Therm istors OF TECHNO Ü h c o a te d b ik e , M a te ria l ‘J ’, 200Q to 3 0 ,0 0 0 Q APPLICATIONS Engineered for 1 Amplitude control • Temperature compensation 1Liquid level indication • Temperature measurement 1Flow measurement
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1J095
1j17
Mil-T-23648
Thermistor NTC 20K Ohm
1J20
NTC thermistor 5k ohm
Dale Electronics thermistors
1J26
1J112
1J15
1j29
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62981 Advance Information 64K x 4 Bit Fast Synchronous ParityRam The MCM62981 is a 262,144 bit synchronous static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola's high-performance
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MCM62981
MCM62981
I3MCOE0GES082
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1990 1142
Abstract: No abstract text available
Text: A COMPANY MODEL 1J NTC Thermistors OF TECHNO llhcoated b& c, Material ‘J ’, 200Q to 30,000Q APPLICATIONS Engineered for • Temperature compensation • Temperature measurement • Temperature control • Meter compensation • Voltage regulation • •
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1J095
1990 1142
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Untitled
Abstract: No abstract text available
Text: R F MICRO DEVICES RF2302 Preliminary BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems
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RF2302
950MHz
1450MHz)
RF2302
100MHzdB
98MHz)
PCS1800
1880MHz,
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GTO catalogue
Abstract: SG1000EX23 toshiba gto
Text: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,
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1000EX23
GTO catalogue
SG1000EX23
toshiba gto
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Untitled
Abstract: No abstract text available
Text: REFERENCE AND APPLICATION DATA Pressure and Force Sensors 40PC Hose and Tubing Recommendations - Note # 4 HOSE APPLICATIONS An alternative to manifold mounting the 40PC pressure sensor is to use a hose in fuel pressure applications. Using a hose to make the pressure connection permits the sensor to be mounted
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0041R)
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Untitled
Abstract: No abstract text available
Text: \j¡¿ S ¡J MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ICMEM-CONI •Slender case sizes are lined up for laying down small places on PC board • Fo r electronic ballast circuits and other long life required applications •Endurance with ripple current: 105°C 8000 to 10000 hours
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400Vdc)
450Vdo
120Hz)
CV440
1601o
18X25.
16X60_
16X40.
18X60
16X60
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1J20
Abstract: No abstract text available
Text: TOSHIBA TC554101J-20/25/30 PRELIMINARY SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE I/O CMOS STATIC RAM Description The TC554101J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.
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TC554101J-20/25/30
TC554101J
400ARY
B-157
B-158
GD2b445
1J20
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