1HF MARKING Search Results

1HF MARKING Result Highlights (6)

Part	Manufacturer	Description
OP249GSZ	Analog Devices	SO-8 MARKED AS \\OP249G\\
DAC08ESZ-REEL	Analog Devices	SO-16 MARKED AS \\DAC08E\\
REF02CSZ	Analog Devices	SO-8 MARKED AS \\REF02C\\
DAC08ESZ	Analog Devices	SO-16 MARKED AS \\DAC08E\\
REF03GSZ	Analog Devices	SO-8 MARKED AS \\REF03G\\
OP221GSZ	Analog Devices	SO-8 MARKED AS \\OP221G\\

1HF MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SN74ACT2227, SN74ACT2229 DUAL 64 x 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES SCAS220C – JUNE 1992 – REVISED OCTOBER 1997 D D D D D D D D D D Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229	Original	PDF	SN74ACT2227, SN74ACT2229 SCAS220C SN74ACT2227 28-Pin
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8550HXLT1G FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION	Original	PDF	L8550HXLT1G L8550H L8550HPLT1G 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G
L8550HQLT1G Abstract: L8550HRLT1G Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H 3 ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G S-L8550HPLT1G L8550H AEC-Q101 3000/Tape L8550HPLT3G s-L8550HPLT3G 10000/Tape L8550HQLT1G L8550HRLT1G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G L8550H 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G L8550H 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series 3 FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 1 ƽPNP complement: L8550H 2 ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G L8550H 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G
sot-23 Marking 1HD Abstract: L8550HRLT1G SOT-23 1HD 1hb marking L8550HPLT1G 1HF MARKING L8550HQLT1G L8550HSLT1G L8550 1Hd SOT23 Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G L8550H 3000/Tape L8550HPLT3G 10000/Tape L8550HQLT1G L8550HQLT3G sot-23 Marking 1HD L8550HRLT1G SOT-23 1HD 1hb marking L8550HPLT1G 1HF MARKING L8550HQLT1G L8550HSLT1G L8550 1Hd SOT23
L8550HPLT1G Abstract: 1Hd SOT23 Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. 3 ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements.	Original	PDF	L8550HPLT1G S-L8550HPLT1G L8550H AEC-Q101 3000/Tape L8550HPLT3G s-L8550HPLT3G 10000/Tape L8550HPLT1G 1Hd SOT23
sot-23 Marking 1HD Abstract: No abstract text available Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	PDF	SS8550LT1 OT-23 27-Jul-2012 -80mAdc) OT-23 sot-23 Marking 1HD
sot-23 Marking 1HD Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1 Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1	Original	PDF	SS8550LT1 OT-23 -20Vdc, 10-Apr-09 -80mAdc) OT-23 sot-23 Marking 1HD TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
smd diode s8 Abstract: DIODE SMD MARKING CODE S8 DIODE SMD MARKING CODE SF SMD S6 oc Diode smd s6 94 smd code 1HF Recovery Glass Passivated sod-123 marking CS SOD-123 smd diode s6 smd SMA diode marking s2 Text: COMCHIP SMD Super Fast Recovery Rectifiers SMD Diodes Specialist CSFM101-HF Thru. CSFM105-HF Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Features Mini SMA / SOD-123 -Batch process design,excellent power dissipation offers better reverse leakage current and thermal	Original	PDF	CSFM101-HF CSFM105-HF OD-123 94-V0 OD-123/Mini Mini-SMA/SOD-123 QW-JS001 CSFM102-HF CSFM103-HF smd diode s8 DIODE SMD MARKING CODE S8 DIODE SMD MARKING CODE SF SMD S6 oc Diode smd s6 94 smd code 1HF Recovery Glass Passivated sod-123 marking CS SOD-123 smd diode s6 smd SMA diode marking s2
ultra fast recovery time diode 10ns Abstract: No abstract text available Text: Low Profile SMD Ultra Fast Recovery Rectifiers CURMT103-HF Thru. CURMT107-HF Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free SOD-123H Features 0.146 3.7 0.130(3.3) 0.018(0.45) 0.006(0.15) -Excellent power dissipation offers better reverse	Original	PDF	CURMT103-HF CURMT107-HF OD-123H CURMT103-HF CURMT104-HF QW-JU004 ultra fast recovery time diode 10ns
1206 footprint dimension Abstract: No abstract text available Text: Low Profile Ceramic Chip Capacitors NMC-E Series CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210 FOOTPRINT	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225 jaA at 20mA output current), and	OCR Scan	PDF	MIC5211 IC5211 OT-23-6 MIC5211 455mW OT-23-6

VJ1210A562JXAMB Abstract: VJ1210Y Z5U 100V VJ1210U marking aeh Text: STYLE VJ1210 Ceram ic Chip Capacitors VISHÄ ¡you* # 0111 NPO/COG, X7R and Z5U B « Capacitance k 8 11 T - “I \|-*- 100 pcs. NPO/COG 50V 4700pF 5600pF 6800pF 8200pF .01nF VJ1210A472JXAMX VJ1210A562JXAMX VJ 1210A682JXAMX VJ 1210A822JXAMX VJ1210A103JXAMX VJ 1210A472JXAMB	OCR Scan	PDF	VJ1210 4700pF 5600pF 6800pF 8200pF VJ1210A472JXAMX VJ1210A562JXAMX 1210A682JXAMX 1210A822JXAMX VJ1210A103JXAMX VJ1210A562JXAMB VJ1210Y Z5U 100V VJ1210U marking aeh
YTS4125 Abstract: A 1HF Text: SILICON PNP EPITAXIAL TYPE YTS4125 U n i t in m n FOR GENERAL PURPOSE USE SWITCHING AND A MPLIFIER + 0.5 Í . 5 - 0.3 APPLICATIONS. + 0.25 ,1 5 -0 1 5 FEATURES: EE • Low Leakage Current : I ^ g Q = - 5 0 n A M a x . IE B O = _ 5 0 n A (Max.) @ Vjng=-20V	OCR Scan	PDF	YTS4125 -50mA, -50mA -10mA 100MHz YTS4125 A 1HF
VJ0603A331 Abstract: VJ0603A120JXAMX VJ0603A4R7DXAMB VJ0603A151 VJ0603U VJ0603A221 VJ0603A101JXAMX vj0603 VJ0603A470JXAMX VJ0603A391 Text: STY LE VJ0603 Ceram ic Chip Capacitors NPO/COG % el Capacitance rymuw^i Bag lo o pcs. Mwwl H NPO/COG 50V 1.0pF VJ0603A1RODXAMX 1.2pF VJ0603A1R2DXAMX 1.5pF VJ0603A1R5DXAMX 1.8pF VJ0603A1R8DXAMX 2.2pF VJ0603A2R2DXAMX 2.7pF VJ0603A2R7DXAMX 3.3pF VJ0603A3R3DXAMX	OCR Scan	PDF	VJ0603 VJ0603A1RODXAMX VJ0603A1R2DXAMX VJ0603A1R5DXAMX VJ0603A1R8DXAMX VJ0603A2R2DXAMX VJ0603A2R7DXAMX VJ0603A3R3DXAMX VJ0603A3R9DXAMX VJ0603A4R7DXAMX VJ0603A331 VJ0603A120JXAMX VJ0603A4R7DXAMB VJ0603A151 VJ0603U VJ0603A221 VJ0603A101JXAMX VJ0603A470JXAMX VJ0603A391
VJ0805A271 Abstract: VJ0805A391JXAMX VJ0805U VJ0805A181 VJ0805A220JXA VJ0805A220JXAMB VJ0805A6R8DXA 220pf npo VJ0805U103 VJ0805A100JXAMX Text: STYLE VJ0805 Ceram ic Chip Capacitors V1SHAY NPO/COG ¡ f ir n * * * '} HJjldMAJI.UI Reel Capacitance 4 ~ 500 pcs~ T —*-] \|— NPO/COG 50 V 1.0pF 1.2pF 1.5pF 1.8pF 2.2pF 2.7pF 3.3pF 3.9pF 4.7pF 5.6pF 6.8pF 8.2pF 10pF 12pF 15pF 18pF 22pF 27pF 33pF 39pF	OCR Scan	PDF	VJ0805 100pF 120pF 150pF 180pF 220pF 270pF 330pF 390pF 470pF VJ0805A271 VJ0805A391JXAMX VJ0805U VJ0805A181 VJ0805A220JXA VJ0805A220JXAMB VJ0805A6R8DXA 220pf npo VJ0805U103 VJ0805A100JXAMX
Untitled Abstract: No abstract text available Text: ¡ e lu o m TC1054 TC1055 TC1186 Semiconductor, Inc. 50mA, 100 mA, and 150 mA CMOS LDOs WITH SHUTDOWN AND ERROR OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ The TC1054, TC1055, and TC 1186 are high accuracy typically ±0.5% CMOS upgrades for older (bipolar) low	OCR Scan	PDF	TC1054 TC1055 TC1186 TC1054, TC1055, TC1054) TC1055) TC1186)
EIA-481-D peel Abstract: No abstract text available Text: MODEL TSM43 Cermet Trimmers VISHAY Surface Mount, 4.0mm Square Design, Multi Turn, Sealed, Industrial Grade FEATURES • Sealed to withstand board wash processing. • Pick and place centering design. • 4.0mm design meets EIA SMD standard trimmer footprint.	OCR Scan	PDF	TSM43 MIL-STD-202, 100PPM/Â 21b24 00025M2 EIA-481-D peel
sem 5025 Abstract: No abstract text available Text: Semiconductor, Inc. TC 1223 TC 1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for	OCR Scan	PDF	TC1223 TC1224 LP2980. T-23A-5 SC-74A) 1223/TC1224-2 sem 5025
TC1014 Abstract: LP2980 MIC5205 TC1107 TC1108 TC1173 TC1185 TC1186 TC1187 marking caa Text: ¡ e l u o m Semiconductor, Inc. TC1014 50m A CMOS LDO W ITH SHUTDOW N AND REFERENCE BYPASS FEATURES G EN ER AL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1 014 is a high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as	OCR Scan	PDF	TC1014 OT-23A-5 MIC5205 LP2980 SC-74A) tc1014-2 TC1014 LP2980 TC1107 TC1108 TC1173 TC1185 TC1186 TC1187 marking caa
Untitled Abstract: No abstract text available Text: lit m TECHNOLOGY LT1309 500kHz M icropower DC/DC Converter for Flash Memory FCflTUIKS DCSCRIPTIOn • 60mA Output Current at 12V from 3V or 5V Supply ■ Shutdown to 9 _iA ■ VPP VALID Comparator ■ Up to 85% Efficiency ■ Switching Frequency: 500kHz (Typical	OCR Scan	PDF	LT1309 500kHz 500kHz 650uA 300mV LT1106 LT1109-12 LT1109A-12
LA50 marking transistor Abstract: No abstract text available Text: M IC 5203 80mA Low-Dropout Voltage Regulator G eneral Description Features The MIC5203 is a family ol efficient linear voltage regulators with very low dropout voltage typically 20mV at light loads and 300mV at 80mA and very low ground current (225jiA at	OCR Scan	PDF	MIC5203 300mV 225jiA MIC5203can 500kHz. 15jiA. LA50 marking transistor

1HF MARKING Search Results

1HF MARKING Result Highlights (6)

1HF MARKING Datasheets Context Search

Untitled

Untitled

L8550HQLT1G

Untitled

Untitled

Untitled

sot-23 Marking 1HD

L8550HPLT1G

sot-23 Marking 1HD

sot-23 Marking 1HD

smd diode s8

ultra fast recovery time diode 10ns

1206 footprint dimension

Untitled

VJ1210A562JXAMB

YTS4125

VJ0603A331

VJ0805A271

Untitled

EIA-481-D peel

sem 5025

TC1014

Untitled

LA50 marking transistor