all transistor book
Abstract: smd code book transistor AEA03244
Text: TLE4976-1H 2-Wire High Precision Hall-Effect Switch TLE4976-1H Target Data, Version 1.6 Features • • • • • • • • • • • • • 2-wire current interface 6/14 mA 3.0 V to 26 V supply voltage operation Operation from unregulated power supply
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TLE4976-1H
P-SC59-3-2
OT-23
TLE4976-1H
all transistor book
smd code book transistor
AEA03244
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FMMTA05R
Abstract: FMMTA06R FMMTA05R-NA FMMTA06 FMMTA05 FMMTA05-1H FMMT-A05 DSA003702
Text: FMMTA05 FMMTA06 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA PARTMARKING DETAIL E C FMMTA05 1H FMMTA06 1G FMMTA05R NA FMMTA06R MA B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FMMTA05
FMMTA06
100mA
FMMTA05R
FMMTA06R
FMMTA05R
FMMTA06R
FMMTA05R-NA
FMMTA06
FMMTA05
FMMTA05-1H
FMMT-A05
DSA003702
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MMBTA05
Abstract: marking 1h
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
MMBTA05
OT-23
100mA
100mA,
100MHz
MMBTA05
marking 1h
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
MMBTA05
OT-23
100mA
100mA,
100MHz
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a06 smd transistor
Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBTA05
CMBTA06
C-120
a06 smd transistor
A06 SMD
SMD A06
smd marking A06
A05 smd
a06 transistor
transistor A05
marking A06
CMBTA05
CMBTA06
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A06 smd
Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBTA05
CMBTA06
C-120
A06 smd
A06 smd transistor
SMD A06
a06 transistor
A05 smd
A05 SOT
marking a06
CMBTA05
CMBTA06
transistor A06
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A06 smd transistor
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H
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OT-23
CMBTA05
CMBTA06
C-120
A06 smd transistor
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transisto r Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBTA05
CMBTA06
C-120
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ASM5P23S05A
Abstract: ASM5P23S05A-1 ASM5P23S09A ASM5P23S09A-1 5I23S05AF 5p23s05af 5P23S05AF-1H
Text: ASM5P23S09A ASM5P23S05A November 2004 rev 1.3 3.3V ‘SpreadTrak’ Zero Delay Buffer General Features out five low-skew clocks. 15 MHz to 133 MHz operating range, compatible The -1H version of the ASM5P23SxxA operates at up to with CPU and PCI bus frequencies.
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ASM5P23S09A
ASM5P23S05A
ASM5P23SxxA
ASM5P23S09A
ASM5P23he
ASM5P23S05A
ASM5P23S05A-1
ASM5P23S09A-1
5I23S05AF
5p23s05af
5P23S05AF-1H
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H
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OT-23
BC846
BC847
BC848
BC846
BC846A
BC846B
BC847A
BC847B
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BAS35
Abstract: MMBD1401
Text: BAS35 BAS35 CONNECTION DIAGRAMS 3 3 3 29 2 SOT-23 1 2 1 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
BAS35
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Untitled
Abstract: No abstract text available
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
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BAS21
Abstract: MMBD1401 h7 sot23 diode FAIRCHILD DIODE
Text: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage
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BAS21
OT-23
MMBD1401
BAS21
h7 sot23 diode
FAIRCHILD DIODE
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h7 sot23 diode
Abstract: marking A82 SOT-23 marking A82 diode marking EY diode A82
Text: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 A82. 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage
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BAS21
OT-23
MMBD1401
BAS21
OT-23-3
ND87Z
h7 sot23 diode
marking A82 SOT-23
marking A82
diode marking EY
diode A82
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BAS21 on
Abstract: BAS21 MMBD1401 FAIRCHILD DIODE
Text: BAS21 BAS21 CONNECTION DIAGRAM 3 3 3 29 2 SOT-23 1 2 2 NC 1 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units W IV Working Inverse Voltage
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BAS21
OT-23
MMBD1401
BAS21 on
BAS21
FAIRCHILD DIODE
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BAS31
Abstract: BAV19
Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAV19
BAS31
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BAS31
Abstract: No abstract text available
Text: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAS31
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BAV99 SOT 23
Abstract: BAV99 UU120
Text: BAV99 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAV99 CONNECTION DIAGRAM 1H SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value Units
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BAV99
OT-23
BAV99 SOT 23
BAV99
UU120
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KST3906 samsung
Abstract: BCW71 AG LC-1010
Text: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
KST3906 samsung
BCW71 AG
LC-1010
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SOT23 M
Abstract: 100S BAS31 MA840 GENERAL PURPOSE DIODE
Text: BAS31 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAS31 M CONNECTION DIAGRAM SOT-23 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value
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BAS31
OT-23
SOT23 M
100S
BAS31
MA840
GENERAL PURPOSE DIODE
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MOSFET MARKING 3F
Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz
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Transistors/SOT23
MMBT2222A
BT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
BS817
BS850
MOSFET MARKING 3F
sot23 s07
marking 702 sot23
Diode marking CODE 1M
transistor marking 6c
2F PNP SOT23
marking code 2f
2F P marking
NA MARKING SOT23
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baw56 sot-23
Abstract: BAV99 BAW56
Text: BAW56 Discrete POWER & Signal Technologies 9 National Semiconductor" BAW56 CONNECTION 1H SOT-23 13 * 1 DIAGRAMS ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted
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BAW56
OT-23
BAV99
baw56 sot-23
BAW56
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BAS31
Abstract: BAV19 259-C
Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*
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OT-23
BAS31
BAV19
bS01130
BAS31
259-C
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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