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    1E19 Search Results

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    1E19 Price and Stock

    TE Connectivity RQ73C1E191RBTD

    RES 191 OHMS 0.1% 1/16W 0402
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    DigiKey RQ73C1E191RBTD Digi-Reel 8,449 1
    • 1 $0.53
    • 10 $0.372
    • 100 $0.2497
    • 1000 $0.24724
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    RQ73C1E191RBTD Cut Tape 8,449 1
    • 1 $0.81
    • 10 $0.574
    • 100 $0.3926
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    Newark RQ73C1E191RBTD Cut Tape 5,000
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    RQ73C1E191RBTD Reel 5,000
    • 1 $0.341
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    Avnet Abacus RQ73C1E191RBTD 17 Weeks 5,000
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    Master Electronics RQ73C1E191RBTD
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    TE Connectivity RP73PF1E19K6BTD

    RES 19.6K OHM 0.1% 1/10W 0402
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    DigiKey RP73PF1E19K6BTD Cut Tape 7,513 1
    • 1 $0.3
    • 10 $0.222
    • 100 $0.155
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    RP73PF1E19K6BTD Digi-Reel 7,513 1
    • 1 $0.3
    • 10 $0.222
    • 100 $0.155
    • 1000 $0.10314
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    RP73PF1E19K6BTD Reel 5,000 5,000
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    Avnet Abacus RP73PF1E19K6BTD 11 Weeks 5,000
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    TE Connectivity RP73PF1E19R6BTD

    RES 19.6 OHM 0.1% 1/10W 0402
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    DigiKey RP73PF1E19R6BTD Cut Tape 4,840 1
    • 1 $0.3
    • 10 $0.212
    • 100 $0.1483
    • 1000 $0.09987
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    RP73PF1E19R6BTD Digi-Reel 4,840 1
    • 1 $0.19
    • 10 $0.139
    • 100 $0.0975
    • 1000 $0.07282
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    Newark RP73PF1E19R6BTD Cut Tape 5,000
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    RP73PF1E19R6BTD Reel 5,000
    • 1 $0.101
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    • 10000 $0.098
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    Chip1Stop RP73PF1E19R6BTD 4,750
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    Master Electronics RP73PF1E19R6BTD
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    Lumileds L2C5-PR001211E1900

    LED COB LUXEON WARM WHT SQ 3500K
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    DigiKey L2C5-PR001211E1900 Tube 81 1
    • 1 $31.22
    • 10 $31.22
    • 100 $24.4448
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    Avnet Silica L2C5-PR001211E1900 8 Weeks 400
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    IBS Electronics L2C5-PR001211E1900 49 29
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    New Advantage Corporation L2C5-PR001211E1900 100 1
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    Advanced Thermal Solutions Inc ATS-21E-19-C2-R0

    HEATSINK 54X54X20MM XCUT T766
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    DigiKey ATS-21E-19-C2-R0 Tray 25 1
    • 1 $4.82
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    1E19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    in4577

    Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
    Text: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient


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    PDF 150mA CLM2950 CLM2951 LP2950/LP2951 CLM2951 1E-28 in4577 CLM2950ACN-X CLM2950CN-X CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X

    4202 BD TRANSISTOR

    Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
    Text: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications


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    PDF TGF4230-EEU TGF4230 TGF4230s 4202 BD TRANSISTOR 4202 BD TRANSISTOR parameter BV 501 TGF4230-EEU bond wire gold

    VP 1176 datasheet

    Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
    Text: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications


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    PDF TGF4250-EEU TGF4250-EEU VP 1176 datasheet LD 757 ps 3 DG 1008

    TGF4350-EPU

    Abstract: No abstract text available
    Text: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x


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    PDF 300um TGF4350-EPU 0007inch TGF4350-EPU

    TGF4230-EEU

    Abstract: No abstract text available
    Text: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications


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    PDF TGF4230-EEU TGF4230-EEU TGF42

    47-2001

    Abstract: ANG-S21 TGF4124-EPU
    Text:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz


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    PDF TGF4124-EPU TGF4124-EPU 47-2001 ANG-S21

    catv DISTRIBUTION NETWORK diagram

    Abstract: resistor network 102J CATV DISTRIBUTION NETWORK SMP1307-027 IS catv ics PN junction diode data sheet in mil grade Voltage Variable Attenuators 3 db attenuator sma end Microwave PIN diode spice PIN diode SPICE model skyworks smp1307
    Text: Application Note A Wideband CATV Attenuator Introduction PI Attenuator Fundamentals In cable TV line amplifiers and set-top applications, a variable attenuator is used in front of an LNA as an AGC. Figure 1 shows a block diagram of a typical transceiver used in a set-top box.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm


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    PDF TGF4118 TGF4118

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


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    PDF LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01

    1E62H

    Abstract: 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt 87C196CB
    Text: 87C196CB Supplement to 8XC196NT User’s Manual CB_title.fm5 Page 1 Tuesday, September 15, 1998 9:54 AM 87C196CB Supplement to 8XC196NT User’s Manual September 1998 Order Number: 272787-002 CB_legal.fm5 Page 1 Tuesday, September 15, 1998 9:39 AM Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or


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    PDF 87C196CB 8XC196NT MSK15, 1E62H 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt

    intel 82527

    Abstract: 1E50H 74HC14 oscillator application note 1E62H 1E06H 82527 INTEL 87C196CB MANUAL mcs 96 programming CAN operation Bosch 74ls373 datasheet
    Text: 87C196CB Supplement to 8XC196NT User’s Manual 87C196CB Supplement to 8XC196NT User’s Manual October 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


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    PDF 87C196CB 8XC196NT MSK15, intel 82527 1E50H 74HC14 oscillator application note 1E62H 1E06H 82527 INTEL 87C196CB MANUAL mcs 96 programming CAN operation Bosch 74ls373 datasheet

    Untitled

    Abstract: No abstract text available
    Text: 1 111111111111111 11111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB11CDEDFD1C111 111111111 1 11111111 1 11 D14F 123314567891A758BCD814E1F3D167D1F1C5A36 DE11D16A99  !"#$%&16A991' 4*+1(C1,FF1!"#1DDEDC


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    PDF 23456789AB11CDEDF C1111111111 123314567891A758BCD814E1F3 167D1 D16A99 16A99 23456789AB1 D68D71456781A75 8D91D69E1 5718D

    7BA4

    Abstract: No abstract text available
    Text: BENEFITS APPLICATIONS • • • • • • • • • • • • Hermetically sealed switch Contacts have no effect on their external environment Low space requirement Zero operating power required Fit and forget durability Reed Relays Security Limit Switching


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    PDF HA15-2 123456275689A25BCD 234567489A 1213456372857469AB 7BA4

    Untitled

    Abstract: No abstract text available
    Text: *51A38 >C9A5 *9C5 ?>C13C !+ I !>E5BC?AB I 'A5BB ?3D=5>C *51A38 I '13;175 *51A38 I '1A1=5CA93 *51A38 I A?BB 565A5>35 *51A38 I A55> )? * I 1<3D<1C?AB I +85A=1< 1C1 I )5<9129<9CG ?=5  'A?4D3CB  <?3; +9=9>7 5E935B  ' %?C52?; *5AE5A <?3;B  ) ! 1>4 ) !! D665AB  05A? 5<1G D665AB  '


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    PDF 51A38 51A38 5CA93 565A5 5E935B D665AB

    C81C

    Abstract: No abstract text available
    Text:     >=C13C !+ J !=E5BC>AB J 'A5BB 1;3D;1C>AB J A>BB 565A5=35 J A55= !=9C91C9E5 J $9;9C1AH J '1A1<5CA93 *51A38 J *51A38 2H '1AC %D<25A "5HF >A4 >3D<5=C A55= '2 A55 '13:175 ><5  'A>4D3CB  ;>3: +9<9=7 5E935B  ' %>C52>>: *5AE5A ;>3:B  ;>3: *H=C85B9I5A 2H 89?B5C -5=4>A  5B:C>? 89?B5CB  #')* 


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    PDF 565A5 9C91C9E5 5CA93 51A38 5E935B C85B9I5A E945B D9A54 C81C

    B-895

    Abstract: A514 B895 c85a
    Text: *51A38 =C9A5 *9C5 >=C13C !+ I !=E5BC>AB I 'A5BB >3D<5=C *51A38 I '13:175 *51A38 I '1A1<5CA93 *51A38 I A>BB 565A5=35 *51A38 I A55= )> * I 1;3D;1C>AB I +85A<1; 1C1 I )5;9129;9CG ><5  'A>4D3CB       # D1;9CG I $9;9C1AG />D <1G 1;B> ;9:5


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    PDF 51A38 51A38 5CA93 565A5 45B97 E945B 535BB1AG B-895 A514 B895 c85a

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


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    PDF 300um TGF4350-EPU 0007-inch

    iih22

    Abstract: ali 3328 N208 transistors E7138 Schematic diagram of DRO lt 175 1111 h3 0926 VS-22 E49-1 cd 208 PIR
    Text: MIL-M-38510/137A 17 September 1986 SUPERSEDING MI L - M - 3 8 5 1 0 / 1 3 7 18 M a r c h 1 9 8 5 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE OUTPUT 12-BIT DIGITAL-TO-ANALOG CONVERTERS, HY3RIO AND MONOLITHIC SILICON This specification ments and A g e n c i e s


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    PDF MIL-M-38510/137A L-M-38510/137 12-BIT MIL-M-38510. MIL-M-38510/137A 704-034/43T30 iih22 ali 3328 N208 transistors E7138 Schematic diagram of DRO lt 175 1111 h3 0926 VS-22 E49-1 cd 208 PIR

    TGF4350-EPU

    Abstract: No abstract text available
    Text: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


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    PDF 300um TGF4350-EPU 0007-inch TGF4350-EPU

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x


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    PDF 300um TGF4350-EPU 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz


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    PDF TGF4118-EPU TGF4118-EPU

    compal service manual

    Abstract: M/1E54H 1E06H
    Text: in tel. APPENDIX C REGISTERS This appendix provides reference information about the device registers. Table C-l lists the mod­ ules and major components of the device with their related configuration and status registers. Ta­ ble C-2 lists the registers, arranged alphabetically by mnemonic, along with their names,


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    PDF 87C196CA, MflEbl75 32-bit 4fl2bl75 compal service manual M/1E54H 1E06H

    Untitled

    Abstract: No abstract text available
    Text: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz


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    PDF TGF4124-EPU TGF4124-EPU

    Untitled

    Abstract: No abstract text available
    Text: T R I Q U I N T S E M I C O N D U C T O R , TO 1.2mm Discrete HFET TGF4230-EEU # 1200 im X 0.5 (im HFET Nominal Pout of 28.5-dBm at 8.5-GHz Nominal Gain of 10.0-dB at 8.5-GHz # Nominal PAE of 55% at 8.5-GHz I N C 4230 O Suitable for High-Reliability Applications


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    PDF TGF4230-EEU F4230 TGF4230s