Untitled
Abstract: No abstract text available
Text: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high
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MBR0540T1G,
NRVB0540T1G,
MBR0540T3G,
NRVB0540T3G
OD-123
MBR0540T1/D
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25 Features 1 Low drain-source ON resistance:RDS(on)typ. = 12.0m （VGS = -2.5 V)
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TT4-EA-14292
FJ3P02100L
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Untitled
Abstract: No abstract text available
Text: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996
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VSKDS400/045
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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JEDEC-JESD47
Abstract: vs-30pt100
Text: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency
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VS-30PT100
O-247AC
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
JEDEC-JESD47
vs-30pt100
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PDF
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 Application 0.2 3 Battery FET Load switch 2.0 0.25 Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ （VGS = -3.5 V)
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TT4-EA-14765
FJ3P01130L
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transil diode
Abstract: No abstract text available
Text: ITA6V1U1 Application Specific Discretes A.S.D.TM TRANSILTM ARRAY FOR DATALINE PROTECTION APPLICATIONS Data transmission lines protection : - Unipolar signal up to 5.5V - Bipolar signal in the +/- 2.5V range FEATURES HIGH SURGE CAPABILITY TRANSIL ARRAY IPP = 40 A 8/20µs
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in4577
Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Text: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient
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150mA
CLM2950
CLM2951
LP2950/LP2951
CLM2951
1E-28
in4577
CLM2950ACN-X
CLM2950CN-X
CLM2951ACP-X
CLM2951ACS-X
CLM2951CP-X
CLM2951CS-X
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BUK542
Abstract: BUK542-100A BUK542-100B
Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL
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OCR Scan
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711QSSb
BUK542-100A/B
-SOT186
BUK542
-100A
-100B
BUK542-100A
BUK542-100B
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PDF
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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PDF
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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OCR Scan
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BUK543-60A/B
-SOT186
BUK543
DS10NÃ
BUK543-60A
BUK543-60B
TTA10
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PDF
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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PDF
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BUK443
Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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711Dfi2b
BUK443-60A/B
OT186
BUK443
BUK443-60A
BUK443-60B
TRANSISTOR C 557 B
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PDF
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Oscilloquartz
Abstract: OCXO8673 Crystal 8.672 OSCILLOQUARTZ S.A OCXO 406 oscilloquartz 4.096
Text: SC-cut Product Description The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to enhance long term stability few parts in 10-10 per day and features a sine or TTL-compatible output. Furthermore, industry standard footprint
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1E-10/day
CH-2002
\XO\SPECOSA\DATA\OCXO8673
Oscilloquartz
OCXO8673
Crystal 8.672
OSCILLOQUARTZ S.A
OCXO 406
oscilloquartz 4.096
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PDF
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ph74
Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Text: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo
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EM78862C
ePV6300
ph74
ph71
ph76
ph77
EM78886
EM78808
EM78862C
EM78P808
OSCILLATOR 32.768K resistor
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PDF
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MIC5232
Abstract: MIC5232-3.3YD5
Text: MIC5232 10mA Ultra-Low Quiescent Current µCap LDO General Description Features • • • • • • The MIC5232 is an ultra-low quiescent current, lowdropout linear regulator that is capable of operating from a single-cell lithium ion battery. Consuming only
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MIC5232
MIC5232
M9999-112006-B
MIC5232-3.3YD5
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BUK456-100A
Abstract: BUK456 BUK456-100 BUK456-100B
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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O220AB
BUK456-100A/B
BUK456
-100A
-100B
BUK456-100A
BUK456
BUK456-100
BUK456-100B
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PDF
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fototransistor BPX 81
Abstract: BPX osram GEOY6021 OHLY0598
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant BPX 81 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • Einstellige Zeilenbauform aus klarem Epoxy
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WH17
Abstract: BC118 VP2122 bc102 "SERIES MELPS 740" BC117 transistor BC118 bbc cs5 BC78 "MELPS 740"
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37274MA-XXXSP
WH17
BC118
VP2122
bc102
"SERIES MELPS 740"
BC117
transistor BC118
bbc cs5
BC78
"MELPS 740"
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Untitled
Abstract: No abstract text available
Text: VS-8EWX06FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr 2, 4 • 175 °C maximum operating junction temperature • For PFC CCM operation • Low forward voltage drop D-PAK TO-252AA
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VS-8EWX06FN-M3
O-252AA)
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-VSKCS403/100 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 400 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996
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VS-VSKCS403/100
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996
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Original
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VS-VSKDS400/045
E78996
O-240AA)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GB05XP120KTPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-APH3006HN3, VS-EPH3006HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Hyperfast soft recovery time • 175 °C operating junction temperature 2 2 Base cathode 2 • Material categorization:
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VS-APH3006HN3,
VS-EPH3006HN3
O-247AC
AEC-Q101
O-247AC
VS-APH3006HN3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape
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VS-UFB130FA60
UFB120FA60P
OT-227
OT-227
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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