BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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U4B R950
Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
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MPC8560
MPC8560UG
CH370
U4B R950
PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC
gigabyte MOTHERBOARD CIRCUIT diagram
C828 3-pin transistor
C1162
transistor C1162
gigabyte g31 MOTHERBOARD SERVICE MANUAL
emp3128
transistor C1162 Scheme
motorola r1009
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20846-5E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
48-pin
48-ball
F0211
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
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C0000-H
Abstract: z256
Text: MBM29LV160T-80/-90/-12 MBM29LV160B-80/-90/-12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV160T-80/-90/-12
MBM29LV160B-80/-90/-12
F0306
C0000-H
z256
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J 6920 A
Abstract: DS05 FPT-48P-M19 FPT-48P-M20 PL160T
Text: MBM29PL160TD/160BD-75/90 データシート 生産終息品 MBM29PL160TD/160BD -75/90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29PL160TD/160BD-75/90
MBM29PL160TD/160BD
DS05-20872-4
MBM29PL160TD/160BD
DS05-20872-4
MBM29PL160TD/BD
J 6920 A
DS05
FPT-48P-M19
FPT-48P-M20
PL160T
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
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MBM29DL640E90TN
Abstract: DS05 FPT-48P-M19 FPT-48P-M20 MBM29DL640E MBM29DL640E12 MBM29DL640E80 MBM29DL640E90 9012a3 SA113C
Text: MBM29DL640E80/90/12 データシート 生産終息品 80/90/12 MBM29DL640E Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29DL640E80/90/12
MBM29DL640E
DS05-20887-4
MBM29DL640E
DS05-20887-4
864bit
MBM29DL640E90TN
DS05
FPT-48P-M19
FPT-48P-M20
MBM29DL640E12
MBM29DL640E80
MBM29DL640E90
9012a3
SA113C
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MBM29F160BE70TN
Abstract: MBM29F160TE-70TN MBM29F160TE70TN DS05 FPT-48P-M19 FPT-48P-M20 MBM29F160BE-70TN MBM29F160BE MBM29F160 MBM29F160BE-90TN
Text: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され
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MBM29F160TE/160BE70/90
MBM29F160TE/BE
216bit
16bit
MBM29F160TE/BE70
MBM29F160TE/BE90
MBM29F160BE70TN
MBM29F160TE-70TN
MBM29F160TE70TN
DS05
FPT-48P-M19
FPT-48P-M20
MBM29F160BE-70TN
MBM29F160BE
MBM29F160
MBM29F160BE-90TN
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FPT-48P-M19
Abstract: FPT-48P-M20 DS05
Text: MBM29LV160T/160B-80/ 90/ 12 データシート 生産終息品 MBM29LV160T/160B -80/ 90/ 12 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29LV160T/160B-80/
MBM29LV160T/160B
DS05-20846-8
DS05-20846-8
MBM29LV160T/B
FPT-48P-M19
FPT-48P-M20
DS05
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FPT-48P-M19
Abstract: FPT-48P-M20 MBM29LV160B MBM29LV160T
Text: MBM29LV160T-80/-90/-12 / MBM29LV160B -80/-90/-12 -80/-90/-12 80/-90/-12 Data Sheet Retired Product MBM29LV160T Cover Sheet /MBM29LV160B - This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
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MBM29LV160T-80/-90/-12
MBM29LV160B
MBM29LV160T
/MBM29LV160B
MBM29LV160T/MBM29LV160B
F0306
ProductDS05-20846-7E
FPT-48P-M19
FPT-48P-M20
MBM29LV160T
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Untitled
Abstract: No abstract text available
Text: WM Y32K36V-XTQX WHITE /MICROELECTRONICS a 32Kx36 M onolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability ■ Packaging: ■ Clock Controlled, Registered, Address, Data and Control
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Y32K36V-XTQX
32Kx36
100-pin
30pFOutput
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KM416S4030A
Abstract: km416s4031 KM416S4030AT-G
Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4030A/KM416S4031A
416S4031AT)
KM416S4030A
km416s4031
KM416S4030AT-G
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Untitled
Abstract: No abstract text available
Text: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. M T28F4°0B1 FLASH MEMORY S m artV o ltag e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Four m ain m em ory blocks
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110ns
44-PiLASH
48-PIN
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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Untitled
Abstract: No abstract text available
Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e
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512Kx8/256Kxl6
512Kx8/256Kx
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT28F200 128K x 16, 256K x 8 FLASH MEMORY » FLASH MEMORY 128K x 16, 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16K B/8K -w ord boot block (protected) T w o 8KB/4K-w ord param eter blocks Two m ain m em ory blocks
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MT28F200
100ns
44-Pin
56-PIN
d111S
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U07K
Abstract: 741i REF04 KM416S4020AT-12
Text: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4020A/KM416S4021A
416S4021AT)
7Tb4142
U07K
741i
REF04
KM416S4020AT-12
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Untitled
Abstract: No abstract text available
Text: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):
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T28F800B5)
44-PIN
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29LVS00
Abstract: 29LV800 AS29 AS29LV800 LI400
Text: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)
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8/512Kx
AS29LV800
1Mx8/512Kx16
64Kbyte
32Kword
AS29IV800T80SE
AS29D/800T-100SC
AS29D/800T-100SI
AS29LV800T-120SC
AS29LV800T-120SI
29LVS00
29LV800
AS29
AS29LV800
LI400
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56-PIN
Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Text: SHARP LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual W ork flash memory • Scalable Command Set (SCS) with Smart 3 technology is a high-density, low-cost, • High performance read access time
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LH28F320S3TD-L10
LH28F320S3TD-L10
56-pin
TSOP056-P-1420)
TSOP056-P-1420
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5416262 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416262
144-Word
16-Bit
MSM5416262
512-word
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S772
Abstract: tms44165
Text: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166C - AUGUST 1992 - REVISED JUNE 1995 DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS44165/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-92.
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TMS44165,
TMS44165P
262144-WORD
16-BIT
SMHS166C
TMS44165/Ps
1DQ14
S772
tms44165
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KM416S4020
Abstract: KM416S4020AT-G
Text: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM416S4020AT
16Bitx
KM416S4020A/KM416S4021A
KM416S4020AT)
0D33D5S
KM416S4020
KM416S4020AT-G
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