diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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Untitled
Abstract: No abstract text available
Text: m <r> DIMENSIONS J_ 2_ mm inches] ELECTRICAL DATA 1 1 .1 -Current a t ANB. 1 . 5 A a t 204 C / 1 A a t 70 * C - [ nax 2 A < slg n a t p in s t 40A (power p in s ) - C o n ta c t r e s is t a n c e < 2 0 ro a c c o r d in g to D IN 4-1540 P a r t 4 t e s t 2a
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1D00V
I77B71
m1-10
C-8609-0740
D90D001
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Mitsubishi transistor
Abstract: QM10 QM100E
Text: MITSUBISHI TRANSISTOR MODULES Q M 10 0 E 2 Y / E 3 Y - 2 H K « Ic • hFE ! INSULATED TYPE I Collector current. 100A Coilector-emltter voltage. 1000V DC current gain. 75 • Insulated Type • UL Recognized
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100E2Y/
E80276
E80271
QM100E2Y/E3Y-2HK
Mitsubishi transistor
QM10
QM100E
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4154A
Abstract: No abstract text available
Text: m <r> J C . 4-3 ? DIMENSIONS 11.1 max i mm inches} 2_ CD ELECTRICAL DATA nax -C u r r e n t a t ANB. 1 , 5 A a t 20 * C / 1 A a t 70 * C - [ nax 2 A < slg n a L p ln s> i 40A (power p in s ) 3 . 6 -O .P 5 - C o n ta c t r e s is t a n c e C. 1423 - C n s u L a t io n r o s is t a n c Q
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4154a
1D00V
8609-324-GP-13-755-792-E1
C-8609-0740
D90D001
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