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    1CH725G Search Results

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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - Pi(jB = 32 dBm at f = 8 GHz • High gain - G-|dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


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    PDF S8837A S8837A

    TCD5251

    Abstract: TCD5251BD TCD5251B
    Text: TCD5251BD GENERAL TCD5251BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 514 horizontal x 579 (vertical), and its image size agrees with 1/3 inch type optical system. This device offers high sensitivity and low smearing, and


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    PDF TCD5251BD TCD5251BD /50--o T0T725Q 1CH725G 0G212 TCD5251 TCD5251B