Untitled
Abstract: No abstract text available
Text: F* /0 ( ( -2'&- ( &#, 2 &2+" ''0)5A95B BEE0-1CC0 D0)C17501CC5AH081A75A 51CDA5B K00+=9E5AB1;00!=?DC0F9C803C9E50' K00 9780'5A6>A<1=350D0)C175081A75A K004E1=3540029C0$93A>?A>35BB>A0>=CA>;09A3D9C K00(5E5AB50'>;1A9CH0'A>C53C9>=02H0 DB5 K00!7=9C9>=0'A>C53C9>=
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5A95B
C1750
81A75A
51CDA5B
DC0F9C80
3C9E50'
350D0
029C0
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tc5118180
Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit
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TC511818
QAJ/AFT-70/80
TC5118180AJ/FT
TC5118180AJ/AFT
TC5118180AJ/AFT-70/80
tc5118180
TC5118180AJ
TC5118180A
A495
A509
TC5118
TOSHIBA TSOP50-P-400
toshiba A500
A498
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SF229
Abstract: toshiba s105
Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by
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TC528257
144WORDS
SF229
toshiba s105
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: May 1990 FUJITSU IP R O D U C T P R O F IL E : MB85260 -80L/-10L/-12L CMOS 1M x 8 LO W PROFILE LO W POW ER DRAM MODULE The Fujitsu MB85260 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85260
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MB85260
-80L/-10L/-12L
MB81C1000
MB85260
30-pin
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Nippon capacitors
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M x 8 Components HITACHI ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The H B526C272EN , H B526C 472EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and
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HB526C272EN-10IN,
HB526C472EN-10IN
72-bit,
ADE-203-693D
B526C272EN
B526C
472EN
B526C272EN
16-Mbit
5216805TT)
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM424C256A 256KX4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port S12 x 4 bits SAM port • Performance range: Item RAM RAM RAM RAM SAM SAM RAM SAM RAM • • • • • • • • • • • • access time tRAc
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KM424C256A
256KX4
125ns
150ns
100ns
180ns
28-PIN
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M372C225AJ KMM372C225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM372C225A is a 2M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C225A - 6 KMM372C225A - 7
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M372C225AJ
KMM372C225AJ
2Mx72
KMM372C225A
1Mx16bit
400mil
110ns
130ns
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5-1304
Abstract: 51304JA
Text: MITSUBISHI LSIs MH51304JA-85,-10, -12, -15 NIBBLE MODE 5 2 4 2 8 8 -W O R D BY 4 -B IT DYNAM IC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW The M H 51304JA is 524,288 word x 4 b it dynam ic RAM and consists o f eight industry standard 256K x 1 dynamic RAMs in plastic leaded chip carrier.
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MH51304JA-85
51304JA
MH51304JA-85,
te211
5-1304
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gpip
Abstract: BU 3150 TS68HC901 TS68HC901CC4 motorola 8bit 6800 IR RECEVER
Text: THOMSON COMPONENTS _ ,f a i TS6 8HC901 r-1|l TI r U N C T I O N P E R I P H E R A L o A D V A N C E IN F O R M A T IO N HCMOS The T S 6 8 H C 9 0 1 m u li-fu n c tio n peripheral C M F P is a m e m b er o f the 6 8 0 0 0 F a m ily o f peripherals and the C M O S version o f th e M K 6 8 9 0 1 T h e
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TS68HC901
TS68HC901
theMK68901
NFC96883
MIL-STDS83
TS68HC901VC4
TS68HC901VCG/B4
gpip
BU 3150
TS68HC901CC4
motorola 8bit 6800
IR RECEVER
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MSM51V17100
Abstract: 724540
Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
A0-A11
b724240
724540
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5M42
Abstract: 4257A 4257AP
Text: MITSUBISHI LSIs WP M5M4257AP,J,L-85,-10,-12,-15 NIBBLE MODE 2 6 2 1 4 4 -B IT 2 6 2 1 4 4 -W O R D BY 1-B IT DYNAMIC RAM DESCRIPTIO N This is a fam ily o f 262144 -w o rd by 1-bit dynam ic RAMs, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance N-channel silicon gate
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M5M4257AP
M5M4257AP,
te221
5M42
4257A
4257AP
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KM48S8030BT
Abstract: No abstract text available
Text: KM48S8030B CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol
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KM48S8030B
KM48S8030B
KM48S8030BT
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020H20
Abstract: No abstract text available
Text: GMM7738283CTG-5/6 LG Semicon Co., Ltd. 8,388,608W ORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features T he GMM7738283CTG is an 8M x 72 bits D ynam ic RAM M ODULE w hich is assembled 9 pieces o f 8M x 8bit DRAMs in 32 pin TSOP n package, one 2k EEPROM for SPD in 8-pin
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GMM7738283CTG
7738283CTG
GMM7738283CTG-5/6
GMM7738283CTG
020H20
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Untitled
Abstract: No abstract text available
Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin
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8Mx36-blt
HYM536810A
36-bit
HY5117400A
HY514100A
HYM53681OAM/ASLM/ATM/ASLTM
HYM53681OAMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM53681
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Untitled
Abstract: No abstract text available
Text: MN 4 1 C 1 0 0 0 A / Â L / À S J - 06/07/08 SPECIFICATIONS 20 1 1M BIT □ 1 bit. CMOS processing wide operating r a n g e and is s u i t a b l e to a p p l i c a t i o n s r a n g i n g to c o n s u m e r □ RAM is t h e new g e n e r a t i o n C M O S d y n a m i c RAM o r g a n i z e d
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MN41C1000A
MN41C1000A/AL/ASJ
10PIN
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.
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D42S16800
42S17800
MPD42S16800,
42S17800,
//PD42S16800,
28-pin
juPD42S
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Untitled
Abstract: No abstract text available
Text: GMM7732010CT/TG-6/7 LG Semicon Co., Ltd. 2,09 7 ,1 5 2 W O R D S x 72 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7732010C T /T G is an 2M x 72 bits E D O D ynam ic R A M M O D U L E w hich is assem bled 8 pieces of 1M x 16bit E D O D R A M s in 44 pin T S O P II package, 4 pieces
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GMM7732010CT/TG-6/7
7732010C
16bit
48pin
GMM7732010CT/TG
1/1000inches)
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16380C
Abstract: No abstract text available
Text: GMM77316380CTG 16Mx72, 3.3V, 8K Ref, EDO Description Features The GMM773163 80CTG is an 16M x 72 bits Dynamic RAM MODULE which is assembled 18 pieces o f 16M x 4bit DRAM s in 32 pin TSOP-II package and two 16bit driver ICs in 48pin TSSOP package mounted on a 168 pin
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GMM77316380CTG
16Mx72,
GMM773163
80CTG
16bit
48pin
77316380C
77316380CTG
16380C
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2m x 36
Abstract: No abstract text available
Text: = = = = •= ■ = IBM11D2360L IBM11E2360L 2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR
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IBM11D2360L
IBM11E2360L
72-Pin
110ns
130ns
07H4992
MMDS31DSU-00
IBM11E2360L
2m x 36
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Untitled
Abstract: No abstract text available
Text: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or
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uPD424900A/L
42S4900A/L
/PD424900A/L
/UPD42S4900A/L
24900A
424900L
42S4900A
42S4900L
28-pin
/UPD424900A/L,
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TOED101
Abstract: No abstract text available
Text: NEC M OS INTEGRATED CIRCUIT /¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿iPD42S16800, 42S17800 can execute CAS before RAS self refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
MPD42S16800,
42S17800,
iPD42S16800,
42S17800
28-pin
TOED101
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NEC 4216160
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S18160,
/iPD42S16160,
42S18160
50-pin
NEC 4216160
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