KS011S
Abstract: samsung p28 6-bit ram-dac video converter amplifier 3HH cga 624 KS0117 WVS 64 256X8 CK27 HN10
Text: PRELIMINARY KS0119 MULTIMEDIA VIDEO NTSC ENCODER The KS0119 NTSC encoder is a member of the Samsung multimedia chip family. It combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either
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KS0119
KS0119
-170A
0G2L054
RS-170A
002fc
KS011S
samsung p28
6-bit ram-dac video converter
amplifier 3HH
cga 624
KS0117
WVS 64
256X8
CK27
HN10
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IRL620
Abstract: DDEC144 DS-10 IRL621 diode DS10
Text: N-CHANNEL LOGIC LEVEL MOSFETS IRL620/621 FEATURES • • • • • • • • Lower R ds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL620/621
O-220
O-220
IRL620
IRL621
71bm4B
DDEC144Ã
DDEC144
DS-10
diode DS10
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Untitled
Abstract: No abstract text available
Text: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed
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KS0093
26COM/8QSEG
KS0093
71b4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7 elt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Coltector-Emltter Voltags: Vc£o =25V • Collector Dissipation: I Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6523
625mW
2N3906
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Untitled
Abstract: No abstract text available
Text: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPS6562
QQ07330
T-29-21
625mW
MPS6560
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Untitled
Abstract: No abstract text available
Text: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MPSA63
625mW
MPSA62
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Untitled
Abstract: No abstract text available
Text: I S AM S U N G S E M I C O N D U C T O R . INC MMBT4124 14E D | 7*^4142 0 0 0 7 a tt» 7 | NPN EPITAXIAL SILICON TRANSISTOR .T j-a R -fl GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBT4124
OT-23
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Untitled
Abstract: No abstract text available
Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1004DT
1b4142
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transistor
Abstract: Samsung Semiconductor
Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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0007am,
MMBC1623L3
transistor
Samsung Semiconductor
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MMBC1009F1
Abstract: No abstract text available
Text: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D | 7*ìfc.4142 00G723? | NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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00G723?
MMBC1009F1
OT-23
MMBC1009F1
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MPS8099 equivalent
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS8099 lt<E D | - 7*^4142 000733*1 fl NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: V c eo = 8 0 V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
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MPS8099
625mW
MPS8098
MPS8099 equivalent
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Untitled
Abstract: No abstract text available
Text: [SAMSUNG SEM IC ON DU CT OR INC MPS3705 14E D 17^4145 0QQ731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR G E N E R A L P U R P O S E TRAN SISTO R • Collector-Emitter Voltage: Vceo=30V • C o lle cto r D issipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)
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0QQ731fc,
MPS3705
625mW
2N4400
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MPSA10
Abstract: MPSA10 equivalent transistor
Text: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPSA10
625mW
T-29-21
MPSA10
MPSA10 equivalent
transistor
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage
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00G723G
MMBA811C7
OT-23
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MARKING W2 SOT23 TRANSISTOR
Abstract: MMBA812M3 DO 127
Text: SAMSUNG S E M I C O N D U C T O R . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage
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MMBA812M3
OT-23
MMBT5086
MARKING W2 SOT23 TRANSISTOR
MMBA812M3
DO 127
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it4142
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 14E D | ? it,4142 GOOtfllb 0 | KSA952 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hfe and LOW VCE<sat) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Symbol Collector-Base Voltage
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KSA952
it4142
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KS0106
Abstract: KS0105
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0106 50 CHANNEL SEGM ENT DRIVER FOR DOT M ATRIX LCD The KS0106 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. This device consists of Display Data RAM, 50 bit data latch, 50 bit driver and decoder cir
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KS0106
KS0106
00SGB01
2aa-09a
KS0105
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBT5087
OT-23
MMBT5086
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Untitled
Abstract: No abstract text available
Text: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D | 7^4142 0007300 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA64
T-29-29
OT-23
MMBTA63
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Untitled
Abstract: No abstract text available
Text: SAMSU NG S E M I C O ND U C T O R INC MMBT2222 14E D | T'Ibm ME 00072S3 1 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C C haracteristic CoBector-Base Voltage Codec tor-Emltter Voltage Emitter-Base Voltage
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MMBT2222
00072S3
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RAS 1210 SUN HOLD
Abstract: sun hold RAS 1220 sun hold ras 1210
Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns
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KM416V1204A/A-L/A-F
KM416V1204A-6/A-L6/A-F6
110ns
KM416V1204A-7/A-L7/A-F7
130ns
KM416V1204A-8/A-L8/A-F8
150ns
42-LEAD
44-LEAD
RAS 1210 SUN HOLD
sun hold RAS 1220
sun hold ras 1210
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Untitled
Abstract: No abstract text available
Text: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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000737b
MPSA77
625mW
MPSA75
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MMBC1009F3
Abstract: No abstract text available
Text: .SAMSUNG SEMICONDUCTOR . INC MMBC1009F3 14E D | 7 1 k 4 1 »l2 0 0 0 7 5 3 1 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-X9 AM /FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBC1009F3
T-31-X9
OT-23
MMBC1009F3
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MPS4250 equivalent
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS4250 14E 0 | 7 e,tM1.l!.a °.0 0 7 3 1 '1 5 I PNP EPITAXIAL SILICON TRANSISTOR T -2 9-1 5 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pc (max =200mW ABSOLUTE MAXIMUM RATINGS .(Ta=25°C)
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MPS4250
200mW
MPS4250 equivalent
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