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    1B MARKING TRANSISTOR Search Results

    1B MARKING TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1B MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd marking PE

    Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H


    Original     		PDF OT-23 BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B

    Untitled

    Abstract: No abstract text available
    Text: FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This


    Original     		PDF FDG314P FDG314P

    FDC633N marking convention

    Abstract: No abstract text available
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N NF073 FDC633N marking convention

    1F SOT 23

    Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 1F SOT 23 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850

    CMBT2907

    Abstract: CMBT2907A
    Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_


    OCR Scan     		PDF CMBT2907 CMBT2907A CMBT2907 500mA; 150mA; CMBT2907A

    Untitled

    Abstract: No abstract text available
    Text: CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBT3903 = ÎY CMBT3904 = ÎA PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 014 0.09 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.02 ^


    OCR Scan     		PDF CMBT3903 CMBT3904 23833TM

    FDG314P

    Abstract: SC70-6
    Text: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This


    OCR Scan     		PDF FDG314P FDG314P SC70-6

    npn 1b

    Abstract: CMBT3903 CMBT3904
    Text: L CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


    OCR Scan     		PDF CMBT3903 CMBT3904 CMBT3903 CMBT3904 npn 1b

    CMBT3906

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT3906 CMBT3906

    Untitled

    Abstract: No abstract text available
    Text: D1L CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.48 "531 ’S 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 0.70 0.50 1.4 1.2


    OCR Scan     		PDF CMBT3903 CMBT3904 CMBT3903 R0-05

    Untitled

    Abstract: No abstract text available
    Text: DIL BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors Marking BSR20 = T35 BSR20A = T36 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR


    OCR Scan     		PDF BSR20 BSR20A BSR20 250pA; BSR20A

    Untitled

    Abstract: No abstract text available
    Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR


    OCR Scan     		PDF CMBT2907 CMBT2907A CMBT2907 150mA;

    Untitled

    Abstract: No abstract text available
    Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4


    OCR Scan     		PDF CMBT2907 CMBT2907A 150mA;

    1B marking transistor

    Abstract: st ld 33 FDD603AL transistor themal
    Text: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This


    OCR Scan     		PDF FDD603AL FDD603AL, 1B marking transistor st ld 33 FDD603AL transistor themal

    PQC5001T

    Abstract: PPC5001T FO-102
    Text: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.


    OCR Scan     		PDF PPC5001T PQC5001T 711002b 00Mb422 PPC5001T PQC5001T T-33-05 711065b FO-102

    CMBT3903

    Abstract: CMBT3904
    Text: CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P -N transistors PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CMBT3903 = ÎY CMBT3904 = ÎA _3.0 2.8 0.14 0.09 0.48 0.38 _L 0 .70 0.50 3 1.4 2.6 Pin configuration 1.2 2.4 1 = BASE 2 = EMITTER


    OCR Scan     		PDF CMBT3903 CMBT3904 CMBT3903 CMBT3904

    Untitled

    Abstract: No abstract text available
    Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C


    OCR Scan     		PDF BCW31 BCW32 BCW33 BCW31 BCW32

    Diodes Marking K7

    Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 Diodes Marking K7 Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23

    Untitled

    Abstract: No abstract text available
    Text: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40


    OCR Scan     		PDF BCW69 BCW70

    314P

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This


    OCR Scan     		PDF FDG314P SC70-6 314P

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)


    OCR Scan     		PDF BCW89 23fl33T4

    Untitled

    Abstract: No abstract text available
    Text: BCW89 CDU SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O .H 0.70 0.50 "11.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 ööö+T j f S »W-05 0.12 0.02 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BCW89 200tiA;