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    1A SMD TRANSISTOR Search Results

    1A SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1A SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC5212 180MHz 100mA 500mA -10mA

    SMD BR

    Abstract: transistor smd marking 2SA1364 2SC3444
    Text: Transistors SMD Type Low Frequency Power Amplify Applications 2SA1364 Features High Voltage VCEO = -60V High Collector Current IC = -1A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3444 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1364 500mW 2SC3444 100mA -500mA -25mA SMD BR transistor smd marking 2SA1364 2SC3444

    MARKING SMD PNP TRANSISTOR R

    Abstract: MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260
    Text: Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE sat . Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


    Original     		PDF 2SB1260 100ms -500mA -50mA 30MHz MARKING SMD PNP TRANSISTOR R MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260

    2SB1443

    Abstract: transistor 2sB1443
    Text: Transistors IC SMD Type Power Transistor 2SB1443 Features Low saturation voltage. VCE sat = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		PDF 2SB1443 -50mA. -50mA 100MHz 2SB1443 transistor 2sB1443

    2sc4672 marking dkq

    Abstract: transistor 2SC4672 2sc4672 dkq 2sc4672 dkr 2SC4672 DKQ* marking
    Text: Transistors SMD Type Low Frequency Transistor 2SC4672 Features Low saturation voltage, typically VCE sat =0.1V at IC/IB =1A /50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		PDF 2SC4672 /50mA. 40X40Xt 100MHz 2sc4672 marking dkq transistor 2SC4672 2sc4672 dkq 2sc4672 dkr 2SC4672 DKQ* marking

    smd ic marking BJE

    Abstract: transistor smd marking BJE 2SB1427
    Text: Transistors SMD Type Power Transistor 2SB1427 Features Low saturation voltage, typically VCE sat =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO


    Original     		PDF 2SB1427 -1A/-50mA. -500mA 30MHz smd ic marking BJE transistor smd marking BJE 2SB1427

    CMBT3903

    Abstract: CMBT3904
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF ISO/TS16949 OT-23 CMBT3903 CMBT3904 C-120 CMBT3903 CMBT3904

    SMD transistor 23

    Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
    Text: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409


    Original     		PDF 2SA1681 300ns 2SC4409 -100mA -10mA, SMD transistor 23 smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a

    2SA1213

    Abstract: 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
    Text: Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873


    Original     		PDF 2SA1213 2SC2873 2SA1213 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287

    yq smd transistor

    Abstract: marking YQ 2SB1115A
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115A Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage


    Original     		PDF 2SB1115A yq smd transistor marking YQ 2SB1115A

    Vceo 80V Ic 0.5A

    Abstract: 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor
    Text: Transistors SMD Type Power Transistor 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage


    Original     		PDF 2SD1898 40X40X0 500mA -50mA, 100MHz Vceo 80V Ic 0.5A 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor

    smd TRANSISTOR YK

    Abstract: smd marking YK transistor yk 2SB1115 TRANSISTOR SMD PNP 1A ic marking YK marking YL smd pnp marking YK transistor marking YK
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115 Features World standard miniature package. Low VCE sat : VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage


    Original     		PDF 2SB1115 smd TRANSISTOR YK smd marking YK transistor yk 2SB1115 TRANSISTOR SMD PNP 1A ic marking YK marking YL smd pnp marking YK transistor marking YK

    transistor smd marking KA

    Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681


    Original     		PDF 2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF

    CMBT3903

    Abstract: CMBT3904 smd SA marking on IC
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT3903 CMBT3904 C-120 CMBT3903 CMBT3904 smd SA marking on IC

    marking aae

    Abstract: marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1946 Features Low collector saturation voltage VCE sat =-0.25V typ High fT: fT=180MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1A Small package for mounting Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1946 180MHz -100mA -500mA -25mA -10mA marking aae marking aag smd AAE smd marking AAE 2SA1946 hFE CLASSIFICATION Marking smd ic marking aae

    2SB772 SMD

    Abstract: smd 2sb772 2a smd 2SB772 Transistor 2sb772 smd transistor 2A 2SB772 TRANSISTOR 2SB772 equivalent smd 2a transistor
    Text: Transistors SMD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE sat -0.5(@ IC=-2A,IB=-0.2A) Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter


    Original     		PDF 2SB772 10MHz 2SB772 SMD smd 2sb772 2a smd 2SB772 Transistor 2sb772 smd transistor 2A 2SB772 TRANSISTOR 2SB772 equivalent smd 2a transistor

    549 SMD transistor

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT549 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2


    Original     		PDF FZT549 OT-223 -100mA -50mA, -500mA -100mA 100MHz 549 SMD transistor

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Planar Medium Power Transistor FZT591A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 -0.2 • Features ● Power Collector dissipation: PC=2W ● Continuous Collector Current: IC=-1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 6.50 +0.2


    Original     		PDF FZT591A OT-223 -100mA -50mA -100mA -500mA, -50mA 100MHz

    smd transistor yf

    Abstract: smd marking YF smd marking YE SMD TRANSISTOR MARKING 28 marking YG marking YF YF 215 2SC3728 hFE CLASSIFICATION Marking 017V
    Text: Transistors SMD Type Small Signal Transistor 2SC3728 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC3728 500mW. 100mA -10mA smd transistor yf smd marking YF smd marking YE SMD TRANSISTOR MARKING 28 marking YG marking YF YF 215 2SC3728 hFE CLASSIFICATION Marking 017V

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H


    Original     		PDF OT-23 BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B

    SMD TRANSISTOR MARKING BF

    Abstract: bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V
    Text: Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC3443 500mW. 100mA -10mA SMD TRANSISTOR MARKING BF bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT3903 CMBT3904 C-120

    2SC5212

    Abstract: marking ue hFE CLASSIFICATION Marking
    Text: Transistors SMD Type Small Signal Transistor 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC5212 180MHz 100mA 500mA -10mA 2SC5212 marking ue hFE CLASSIFICATION Marking

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel