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    1A, GATE DRIVER Search Results

    1A, GATE DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation

    1A, GATE DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SNVS369

    Abstract: LM5109
    Text: LM5109 LM5109 100V / 1A Peak Half Bridge Gate Driver Literature Number: SNVS369 LM5109 100V / 1A Peak Half Bridge Gate Driver General Description The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel


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    PDF LM5109 LM5109 SNVS369 SNVS369

    Untitled

    Abstract: No abstract text available
    Text: LM5109A LM5109A High Voltage 1A Peak Half Bridge Gate Driver Literature Number: SNVS412 LM5109A High Voltage 1A Peak Half Bridge Gate Driver General Description The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side


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    PDF LM5109A LM5109A SNVS412

    SNVS477A

    Abstract: No abstract text available
    Text: LM5109B LM5109B High Voltage 1A Peak Half Bridge Gate Driver Literature Number: SNVS477A LM5109B High Voltage 1A Peak Half Bridge Gate Driver General Description The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel


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    PDF LM5109B LM5109B SNVS477A SNVS477A

    mlp8 Package

    Abstract: mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8 FAN3111C
    Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.


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    PDF FAN3111 FAN3111C FAN3100C 470pF FAN3111 mlp8 Package mlp8 land pattern MLP8 FOOTPRINT fairchild MLP8

    MLP8 FOOTPRINT

    Abstract: boost converter sot23-5 "internal mos" AP015 FAN3111E FAN3111C
    Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     1.4A Peak Sink / Source at VDD = 12V The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications.


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    PDF FAN3111 FAN3111C FAN3100C 470pF FAN3111 MLP8 FOOTPRINT boost converter sot23-5 "internal mos" AP015 FAN3111E

    FAN3111C

    Abstract: No abstract text available
    Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description • •     The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V


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    PDF FAN3111 FAN3111 FAN3111C FAN3100C

    Untitled

    Abstract: No abstract text available
    Text: LM5100A,LM5100B,LM5100C,LM5101A,LM5101B, LM5101C LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers Literature Number: SNOSAW2M August 20, 2011 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers General Description


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    PDF LM5100A LM5100B LM5100C LM5101A LM5101B, LM5101C LM5100A/B/C LM5101A/B/C LM5100A/B/C,

    MLP8 package

    Abstract: MLP8 FOOTPRINT FAN3111C
    Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V


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    PDF FAN3111 FAN3111C FAN3100C FAN3111 MLP8 package MLP8 FOOTPRINT

    MLP8 FOOTPRINT

    Abstract: soic8 footprint mlp8 land pattern mlp8 FAN3111ESX fan3111c 7A SOIC8 FAN3111 sot23-5 mosfet driver FAN3111CSX
    Text: FAN3111 — Single 1A High-Speed, Low-Side Gate Driver Features Description ƒ ƒ ƒ ƒ ƒ The FAN3111 1A gate driver is designed to drive an Nchannel enhancement-mode MOSFET in low-side switching applications. 1.4A Peak Sink / Source at VDD = 12V 1.1A Sink / 0.9A Source at VOUT = 6V


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    PDF FAN3111 FAN3111C FAN3100C 470pF FAN3111 MLP8 FOOTPRINT soic8 footprint mlp8 land pattern mlp8 FAN3111ESX 7A SOIC8 sot23-5 mosfet driver FAN3111CSX

    CIRCUIT TURN SIGNAL 6 VOLT

    Abstract: gate driver high side buck driver
    Text: MX8830B/MX8830R/MX8830X Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The MX8830 family are 1A Source / 1A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically designed to drive two N-channel power MOSFETs


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    PDF MX8830B/MX8830R/MX8830X MX8830B/MX8803R/MX8830X: MX8830R/MX8830X: MX8830 MX8830 CIRCUIT TURN SIGNAL 6 VOLT gate driver high side buck driver

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V / 1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES 1 • 2 • • • • • • Drives both a high side and low side NChannel MOSFET 1A peak output current 1.0A sink / 1.0A


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    PDF LM5109 SNVS369 LM5109 ISL6700

    IRFD110

    Abstract: IRFD110 91 TA17441 TB334
    Text: IRFD110 Data Sheet January 2002 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 1A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRFD110 IRFD110 IRFD110 91 TA17441 TB334

    an7254

    Abstract: RFL1P10 RFL1P08
    Text: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260. RFL1P10 RFL1P08

    RFL1N15

    Abstract: AN7254 AN7260 RFL1N12 TB334
    Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15 AN7260 RFL1N12 TB334

    lm5109

    Abstract: No abstract text available
    Text: NRND LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V/1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High Side and Low Side NChannel MOSFET 1A Peak Output Current 1.0A Sink / 1.0A


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    PDF LM5109 SNVS369 LM5109 00V/1A ISL6700

    Untitled

    Abstract: No abstract text available
    Text: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the


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    PDF LM5109A SNVS412A LM5109A ISL6700

    WSON8

    Abstract: No abstract text available
    Text: NRND LM5109 www.ti.com SNVS369 – APRIL 2005 LM5109 100V/1A Peak Half Bridge Gate Driver Check for Samples: LM5109 FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High Side and Low Side NChannel MOSFET 1A Peak Output Current 1.0A Sink / 1.0A


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    PDF LM5109 SNVS369 LM5109 00V/1A ISL6700 WSON8

    Untitled

    Abstract: No abstract text available
    Text: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the


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    PDF LM5109A SNVS412A LM5109A

    Untitled

    Abstract: No abstract text available
    Text: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the


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    PDF LM5109A SNVS412A LM5109A

    l5109

    Abstract: L5109BMA 5109BSD BMA Electronics
    Text: LM5109B www.ti.com SNVS477A – FEBRUARY 2007 – REVISED MARCH 2007 LM5109B High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109B FEATURES DESCRIPTION • The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the


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    PDF LM5109B SNVS477A LM5109B ISL6700 l5109 L5109BMA 5109BSD BMA Electronics

    L5109

    Abstract: No abstract text available
    Text: LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the


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    PDF LM5109A SNVS412A LM5109A L5109

    NTE7426

    Abstract: NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7425 14-Lead DIP, See Diag. 247 Dual 4—Input Positive NOR Gate w/Strobe NTE7426, 14-Lead DIP, See Diag. 247 NTE74LS26 Quad 2-Input High Voltage Interface NAND Gate 1A ^ V^ ~ 1B 3 B Q Vcc 1a g Q 4B


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    PDF NTE7425 14-Lead NTE7426, NTE74LS26 NTE7427, NTE74LS27 NTE7428, NTE7426 NTE7432 NTE74LS32 NTE7438 NTE7441 NTE74C30 NTE7427 NTE7440 NTE74HC32 nte7437

    Untitled

    Abstract: No abstract text available
    Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan
    PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260.

    tc140g

    Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
    Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.


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    PDF TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18