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    1N60S Price and Stock

    onsemi NTMT061N60S5F

    SUPERFET5 FRFET, 61MOHM, PQFN88
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    DigiKey NTMT061N60S5F Cut Tape 2,154 1
    • 1 $7.96
    • 10 $5.678
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    • 1000 $4.29962
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    NTMT061N60S5F Digi-Reel 2,154 1
    • 1 $7.96
    • 10 $5.678
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    Avnet Americas NTMT061N60S5F Reel 22 Weeks 3,000
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    Mouser Electronics NTMT061N60S5F 2,980
    • 1 $8.92
    • 10 $6.31
    • 100 $4.68
    • 1000 $4.3
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    Newark NTMT061N60S5F Reel 3,000
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    Rochester Electronics NTMT061N60S5F 46,876 1
    • 1 $4.78
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    Richardson RFPD NTMT061N60S5F 3,000
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    Avnet Silica NTMT061N60S5F 23 Weeks 3,000
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    EBV Elektronik NTMT061N60S5F 24 Weeks 3,000
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    Wuhan P&S NTMT061N60S5F 2,900 1
    • 1 $12
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    • 100 $7.66
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    onsemi NTHL041N60S5H

    NTHL041N60S5H
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    DigiKey NTHL041N60S5H Tube 1,148 1
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    • 10 $7.68
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    Avnet Americas NTHL041N60S5H Tube 22 Weeks 450
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    Mouser Electronics NTHL041N60S5H 999
    • 1 $8.57
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    • 100 $6.41
    • 1000 $5.35
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    Newark NTHL041N60S5H Bulk 431 1
    • 1 $9.99
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    • 100 $7.29
    • 1000 $6.51
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    Rochester Electronics NTHL041N60S5H 104,850 1
    • 1 $5.95
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    TME NTHL041N60S5H 182 1
    • 1 $9.12
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    Richardson RFPD NTHL041N60S5H 450
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    Avnet Asia NTHL041N60S5H 22 Weeks 450
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    Avnet Silica NTHL041N60S5H 210 23 Weeks 30
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    EBV Elektronik NTHL041N60S5H 24 Weeks 30
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    New Advantage Corporation NTHL041N60S5H 194 1
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    Wuhan P&S NTHL041N60S5H 75 1
    • 1 $14.93
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    • 100 $9.53
    • 1000 $7.23
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    Rochester Electronics LLC FKN1N60SA

    TRIAC SENS GATE 600V 1A TO92-3
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    DigiKey FKN1N60SA Bulk 1,902
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    onsemi FKN1N60SA

    TRIAC SENS GATE 600V 1A TO92-3
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    DigiKey FKN1N60SA Bulk 10,000
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    onsemi NTBL061N60S5H

    MOSFET - POWERN CHANNEL, SUPERFE
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    Find more 1N60S price and stock on Findchips.com

    1N60S Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N60S CEIEC Rectifier Diode, Single, 45V, DO-7, 2-Pin Scan PDF
    1N60S Honey Technology Point Contact Germanium Diode Scan PDF
    1N60S Korea Electronics RECTIFIER DIODE,45V V(RRM),DO-7 Scan PDF
    1N60S Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    1N60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N60 diode

    Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
    Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC


    Original     		PDF 1N60P, 1N60S 40MHz 1N60 diode germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent

    1N60P

    Abstract: ST60P 1N60S 20PF
    Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1


    Original     		PDF ST60P, ST60S 1N60P 1N60S DO-35-1 DO-35 ST60P ST60P 1N60S 20PF

    1N60P

    Abstract: diode sod-123 marking code FN
    Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS


    Original     		PDF 1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code FN

    1N60P

    Abstract: 20PF
    Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current


    Original     		PDF 1N60PW, 1N60SW OD-123 1N60P 20PF

    ST60P

    Abstract: 20pf 1N60P 1N60S
    Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm


    Original     		PDF ST60P, ST60S 1N60P 1N60S DO-35-1 40MHz ST60P ST60P 20pf

    1N60P

    Abstract: 20PF
    Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current


    Original     		PDF 1N60PW, 1N60SW OD-123 1N60P 20PF

    ST60P

    Abstract: 20pf 1N60P 1N60S
    Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm


    Original     		PDF ST60P, ST60S 1N60P 1N60S DO-35-1 40MHz ST60P ST60P 20pf

    1N60P

    Abstract: diode sod-123 marking code 26
    Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS


    Original     		PDF 1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code 26

    Semtech 1n60

    Abstract: point contact diode "Point Contact Diode" germanium diode 1N60 1N60 diode 1N60P diode 1n60 germanium diode junction capacitance 1N60 germanium diode 1N60
    Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC


    Original     		PDF 1N60P, 1N60S 40MHz Semtech 1n60 point contact diode "Point Contact Diode" germanium diode 1N60 1N60 diode 1N60P diode 1n60 germanium diode junction capacitance 1N60 germanium diode 1N60

    3VD156600YL

    Abstract: 1N60SS
    Text: 3VD156600YL 3VD156600YL 高压MOSFET芯片 描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强 型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD156600YL 3VD156600YL 3VD156600YLN 600VMOS O-92DT-3L 1N60SS 250uA 250uAVDS 30VVDS 600VVGS 1N60SS

    Untitled

    Abstract: No abstract text available
    Text: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD156600YL 3VD156600YL O-92DT-3L 1N60SS.

    bzv40

    Abstract: bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200 1N6073 1N6074
    Text: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 10 0 150 50 100 150 50 3 .0 3 .0 3 .0 6 .0 6 .0 6 .0 1 2 .0 2 .0 4 2 .0 4 2 .0 4 1 .7 6 1 .7 6 1 .7 6 1 .5 0 1.0 1.0 1.0 5 .0 5 .0 5 .0 1 0 .0 1N6080 1N60S1


    OCR Scan     		PDF 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 1N6080 1N6081 1N6082 bzv40 bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    bzd10

    Abstract: bzv40 bzx97 bzx98 BZW22 N6075 1N6073 1N6074 1N6075 1N6076
    Text: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR Device Package MICROSEMI Recommended Substitute n sec. 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 100 15 0 50 100 150 50 3.0 3.0 3.0 6.0 6.0 6.0 12.0 2.04 2.04 2.04 1.76 1.76 1.76 1.50 1.0 1.0


    OCR Scan     		PDF 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 1N6080 1N6081 1N6082 bzd10 bzv40 bzx97 bzx98 BZW22 N6075

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients


    OCR Scan     		PDF 1N6036A 1N6072A 1N6036A 1N6072A

    Untitled

    Abstract: No abstract text available
    Text: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power


    OCR Scan     		PDF 30Tni37 T-J/-23 0GD4111 1N6036 1N6072A MIL-S-19500/507 1N6072A)

    1NU7

    Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
    Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l


    OCR Scan     		PDF DDD0317 1N599 1N599A 1N600A 1N602 1N602A 1N603 1NS03A 1N604 1N604A 1NU7 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2

    Untitled

    Abstract: No abstract text available
    Text: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di­ odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac-


    OCR Scan     		PDF 1N6036 1N6072 DO-13 Mil-S-19500/507

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    1N6033

    Abstract: 1N6066A
    Text: jcmltronicr discrete devices SEMICONDUCTORS Semitronics Corp. transient suppressors 1.5 KW DO-13 metal case bi-polar JEOEC nn NUMBER : 20 Reverse Stand-Off Voltage VR Volts Breakdown Voltage @ Maximum Clamping Voltage Maximum Reverse Leakage @ vR Maximum


    OCR Scan     		PDF DO-13 1N6036 1N6036A 1N6037A 1N6038 1N6038A 1N6033 1N6039A 1N6Q40 1N6040A 1N6066A

    SKP33A

    Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
    Text: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­


    OCR Scan     		PDF DO-13 5SE10 5SE10A 5SE11 5SE12 5SE13 5SE13A 5SE16A 5SE18 5SE18A SKP33A P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A

    thyristor t 558 f

    Abstract: No abstract text available
    Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1 N6 Q3 6 - 1N6072A + Series C3Y30M Control overpower h m sib ia Protection MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits


    OCR Scan     		PDF 1N6072A C3Y30M 10X1000 1N60SEFJE5 300pcs) 1000pcs) thyristor t 558 f

    1N60S5

    Abstract: 1.2V zener diodes
    Text: K n o x S e m ic o n d u c t o r , in c . These low level zener diodes are designed for use at low current levels. They feature sharp knees, low leakage, low impedance, and low noise. The devices are available in the DO-7 glass package and in die form. LOW VOLTAGE AVALANCHE ZENER DIODES


    OCR Scan     		PDF 1N6082 1N6091 LVA343A LVA3100A 1N6083 1N6084 1N60S5 1N6086 1N6087 1.2V zener diodes