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    1N3070 Search Results

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    1N3070 Price and Stock

    onsemi 1N3070TR

    DIODE GEN PURP 200V 500MA DO35
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    DigiKey 1N3070TR Cut Tape 19,229 1
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    1N3070TR Reel 10,000 10,000
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    Microchip Technology Inc 1N3070-1

    DIODE GEN PURP 175V 100MA DO7
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    DigiKey 1N3070-1 Bulk 257 1
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    Microchip Technology Inc 1N3070-1 464 22 Weeks
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    Onlinecomponents.com 1N3070-1
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    Microchip Technology Inc 1N3070UR-1-TR

    SIGNAL OR COMPUTER DIODE
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    DigiKey 1N3070UR-1-TR Digi-Reel 135 1
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    1N3070UR-1-TR Cut Tape 135 1
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    1N3070UR-1-TR Reel 135 135
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    Microchip Technology Inc JANTX1N3070-1

    DIODE GEN PURP 175V 100MA DO7
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    DigiKey JANTX1N3070-1 Bulk 3 1
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    Microchip Technology Inc JANTX1N3070-1 22 Weeks
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    onsemi 1N3070

    DIODE GEN PURP 200V 500MA DO35
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    1N3070 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3070 Fairchild Semiconductor General purpose high voltage diode, 200V, 0.6A Original PDF
    1N3070 Microsemi Signal or Computer Diode Original PDF
    1N3070 BKC International 200 V, 250 mW general purpose diode Scan PDF
    1N3070 Crimson Semiconductor SILICON DIODES Scan PDF
    1N3070 Crimson Semiconductor Silicon Diodes Scan PDF
    1N3070 Fairchild Semiconductor High speed high conductance diode. Working inverse voltage 175 V. Scan PDF
    1N3070 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N3070 International Semiconductor SWITCHING DIODE Scan PDF
    1N3070 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3070 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N3070 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3070 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3070 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3070 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3070 National Semiconductor Silicon Single Junction Diodes Scan PDF
    1N3070 National Semiconductor General Purpose & Specialty Surface Mount Diodes Scan PDF
    1N3070 National Semiconductor High Voltage Diodes Scan PDF
    1N3070 National Semiconductor Silicon Single Junction Diodes Scan PDF

    1N3070 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N3070UR-1

    Abstract: DO-213AA
    Text: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original
    1N3070UR-1 1N3070UR-1 LL3070 500mW 100mA, 667mA/ MILPRF-19500/169 DO-213AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3070+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


    Original
    1N3070 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 rrent100u PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3070-1+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


    Original
    1N3070-1 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 rrent100u PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original
    1N3070UR-1 1N3070UR- LL3070 500mW 100mA, 667mA/Â MILPRF-19500/169 DO-213AA PDF

    1N3070

    Abstract: 1N3070 DIODE DATASHEET
    Text: 1N3070 1N3070 DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 200 Units V IF AV IFSM Average Rectified Forward Current 500 mA Non-repetitive Peak Forward Surge Current


    Original
    1N3070 DO-35 1N3070 1N3070 DIODE DATASHEET PDF

    1N3070

    Abstract: DIODE 1N3070
    Text: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits


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    1N3070 1N3070 DO-35 com/1n3070 DIODE 1N3070 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3070-1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m


    Original
    1N3070-1 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3070-1+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


    Original
    1N3070-1 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 ent100u PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3070+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0


    Original
    1N3070 Current100m Voltage200 Time50n Current100n Current100u StyleDO-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


    Original
    1N3070- 1N3070-1 500mW 100mA, 667mA/Â MILPRF-19500/169 PDF

    DIODE 1N3070

    Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
    Text: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current


    Original
    1N3070 DO-35 MMBD1401 DIODE 1N3070 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET PDF

    jx4938

    Abstract: 1N3070 1N3070 JANTX J493 1N4938 1N4938-1 1N4938UR-1 DO-213AA 1N3070-1 1N3070UR-1
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 February 2010. INCH-POUND MIL-PRF-19500/169N 2 NOVEMBER 2009 SUPERSEDING MIL-PRF-19500/169M 10 APRIL 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,


    Original
    MIL-PRF-19500/169N MIL-PRF-19500/169M 1N3070, 1N3070-1, 1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, jx4938 1N3070 1N3070 JANTX J493 1N4938 1N4938-1 1N4938UR-1 DO-213AA 1N3070-1 1N3070UR-1 PDF

    DIODE 1N3070

    Abstract: 1N307 1N3070 JANTX 1N3070-1
    Text: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


    Original
    1N3070-1 1N3070-1 500mW 100mA, 667mA/ MILPRF-19500/169 DIODE 1N3070 1N307 1N3070 JANTX PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original
    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    DSAIH0002547

    Abstract: No abstract text available
    Text: B IC C I N T E R N A T I O N A L 3DE D • 1171143 0G00355 0 - ^ C S - O 0! BKC INTERNATIONAL ELECTRONICS, INC. 6 L A K E STREET, LAWRENCE, MA 01841 TEL. NO. 508 6 8 1 - 0 3 9 2 TYPE 1N3070 (SILICON) M A X I M U M RATI N G STORAGE TEMPERATURE: -¿>5C TO + 2 0 0 C


    OCR Scan
    0G00355 1N3070 250mW 100mA 30-30mA DSAIH0002547 PDF

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


    OCR Scan
    1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B PDF

    1N4938

    Abstract: FDH444 1N3070 1N462A 1N463A FDH400 High voltage diodes
    Text: Switching Diodes High Voltage Diodes G lass Package V RRM D evice No. P ackage No. (V) (nA) Min Max @ V V F R (V) (V) @ 'f (m A) C ‘rr (PF) (ns) Te st C ond. P roce ss No. Max Max 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100 175


    OCR Scan
    1N3070 DO-35 1N4938 FDH400 FDH444 1N462A 1N463A High voltage diodes PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOlilN SDE COMPUTER DIODE T> m D01E3bQ 25G • U N I T 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 y y i v i r u I CIV U I K J U U . Switching ^ <r 9 i ABSOLUTE MAXIMUM RATINGS, AT 25°C Reverse Breakdown Voltage . 200V


    OCR Scan
    D01E3bQ 1N3070; 1N3070 1N4938; 1N4938 150mA 500mA 250mW 100/jAdc 175Vdc PDF

    IN3070

    Abstract: 1N3070 IN3070 diode DIODE 1N3070
    Text: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C


    OCR Scan
    1N3070 DO-35 200mAdc 500mA T-r-100 IN3070 1N3070 IN3070 diode DIODE 1N3070 PDF

    cho bond 1029

    Abstract: No abstract text available
    Text: TYPE 1N3070 SILICON SWITCHING DIODE B U L L E T I N N O . DL-S 7 3 9 3 7 0 , N O V E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 973 H IG H -V O L T A G E SW ITCH IN G D IO D E Rugged Double-Plug Construction Electrically Equivalent to 1N4938 DO-35 * m echanical d ata


    OCR Scan
    1N3070 1N4938 DO-35) cho bond 1029 PDF

    1N4939

    Abstract: 1N4938 1N3070 1N4938 JANTX
    Text: COMPUTER DIODE 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 Switching ABSOLUTE MAXIMUM RATINGS, AT 25«C FEATURES Reverse Breakdown Voltage . 2 0 0 V Steady-State Forward Current at or below 25°C Free Air T em p era tu re.1 5 0 m A


    OCR Scan
    1N3070; 1N3070 1N4938; 1N4938 175Vdc 100/yAdc 1N3070 1N4939 1N4938 1N4938 JANTX PDF

    1N3070

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating


    OCR Scan
    05DM33fl DDG37T1 T-91-Ã 1N3070 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Switching Diodes High Voltage Diodes v Device No. Package No. Glass Package *R R M •r (V) (nA) Min Max V F @ V R (V) (V) Min @ Max 'f (mA) c *n (pF) (ns) Max Max Test Cond. Process No. 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100


    OCR Scan
    1N3070 DO-35 1N4938 FDH400 FDH444 PDF

    DO-41

    Abstract: DO41 fairchild 1n3600 DIODE 1N4001 FDC3600 1N3070 1N3600 1N4002 1N4376 1N485B
    Text: FAIRCHILD DIODES/RECTIFIERS DIODES DIODE DICE BY DESCENDING BV C Basic BV >R Vr V f If -Ir •f *rr V @ mA ns @ mA DEVICE Standard V nA @ V pF Max Max Typ Item NO. Device Min Max 1 FDC3070 1N3070 200 100 175 1.0 100 50 10 2.5 100 500 Chip Size Mils Basic


    OCR Scan
    FDC3070 1N3070 15x15 FDC485B 1N485B FDC3600 1N3600 FDC4376 1N4376 DO-41 DO41 fairchild 1n3600 DIODE 1N4001 1N4002 PDF