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    1EC134 Search Results

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    1EC134 Price and Stock

    TE Connectivity EC1342-000

    Wire Labels & Markers 06203931
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    Mouser Electronics EC1342-000
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    TE Connectivity EC1345-000

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    Mouser Electronics EC1345-000
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    TE Connectivity EC1347-000

    Wire Labels & Markers 06203936
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    Mouser Electronics EC1347-000
    • 1 $0.1
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    TE Connectivity EC1341-000

    Wire Labels & Markers 06203930
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    Mouser Electronics EC1341-000
    • 1 $0.1
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    TE Connectivity EC1346-000

    Wire Labels & Markers 06203935
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EC1346-000
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    1EC134 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA2522

    Abstract: TDA2540 TDA2541 TDA2560 TDA2560Q
    Text: TDA2560 TDA2560Q RATINGS L i m i t i n g v a l u e s in a c c o r d a n c e with th e A b s o lu t e M a x i m u m S y s t e m 1EC134 V o lta g e S upply v o lta g e V s m ax. 14 max. 930 V Power dissipation T otal p ow er dissipation Ptot mW T em p eratu res


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    PDF TDA2560 TDA2560Q IZ14-5" TDA2522 TDA2540 TDA2541 TDA2560 TDA2560Q

    TDA2560

    Abstract: TDA2522 TDA2540 TDA2541 TDA2560Q
    Text: TDA2560 TDA2560Q RATINGS L im itin g values in a cc o r d a n c e with the Absolute M aximum System 1EC134 Voltage Supply voltage Vtl 8-5 max. 14 lax. 930 V Power dissipation T o ta l power dissipation Ptot mW T em peratures Storage t e m p e r a t u r e


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    PDF TDA2560 TDA2560Q 1EC134 TDA2560 TDA2522 TDA2540 TDA2541 TDA2560Q

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    PDF BUK657-400A BUK657-400B BUK657 -40QA -400/j bb53T31

    2045CTF

    Abstract: 2040ct PBYR2045CTF PBYR2035CTF PBYR2040CTF 2045CT
    Text: PBYR2035CTF PBYR2040CTF PBYR2045CTF N AUER PHILIPS/DISCRETE 25E D ^53^31 I 0052=173 ô E3 SC HOTTKY- BARRIER DOUBLE RECTIFIER DIODES 7=0 3-/9 Low-leakage p la tin u m -b a rrie r double re c tifie r diodes in SO T-186 fu ll-p a ck p lastic envelopes fe a tu rin g low fo rw a rd voltage dro p , lo w capacitance and absence o f stored charge. T h e ir e le ctrica l


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    PDF PBYR2035CTF PBYR2040CTF PBYR2045CTF OT-186 2045CTF 2040ct PBYR2045CTF 2045CT

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


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    PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    Untitled

    Abstract: No abstract text available
    Text: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope


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    PDF BAV23S BAV23S

    Untitled

    Abstract: No abstract text available
    Text: ,N AMER '- ° ~f PHILIPS/DISCRETE - — — ObE D - — - bbSBTBl 0015441 b BAS32 J T V - O f - P l HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. . This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope w ith tin-plated metal discs at


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    PDF BAS32 BAS32 OD-80

    TDA8703

    Abstract: TDA8703T TDA87803 TDA8780
    Text: Philips Semiconductors Video Products Product specification 8-bit high-speed analog-to-digital converter TDA8703 FEATURES APPLICATIONS GENERAL DESCRIPTION • 8-bit resolution • General purpose high-speed analog-to-digital conversion The TDA8703 is an 8-bit high-speed


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    PDF TDA8703 TDA8703 TDA87803 TDA8703. 711082b TDA8703T TDA8780

    SOT123 Package

    Abstract: sot123 TRANSISTOR 2X5 BLV12
    Text: P ro d u cT jg je H ica tjo n Philips Semiconductor* BLV12 VHF power transistor FEATURES • Emitter-ballasting resistors lor an optimum temperature profile • Excellent reliability • Withstands full load mismatch. QUICK REFERENCE DATA RF performance a t T^, = 25 °C In a common emitter test circuit.


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    PDF BLV12 OT123 PINNING-SOT123 1EC134) D03Slb0 SOT123 Package sot123 TRANSISTOR 2X5 BLV12

    t04d

    Abstract: TDE8715D digital to analog converter ecu
    Text: Preliminary specification Philips Semiconductors Integrated Circuits 8-bit high-speed analog-to-digital converter Mil. temp. FEATURES • 8-bit resolution • Sampling rate up to 50 MHz • High signal-to-noise ratio over a large analog input frequency range


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    PDF TDE8715D TDE8715D 711002b t04d digital to analog converter ecu

    Untitled

    Abstract: No abstract text available
    Text: 3 U ta l tgjurjeyg: : e PBYR1635F PBYR1640F PBYR1645F N AMER PHILIPS/DISCRETE 25E D B tbSBTBl 0 0 2 2 ^ 3 S B 1 7^03-17 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low


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    PDF PBYR1635F PBYR1640F PBYR1645F OT-186

    Mullard Mullard quick reference guide

    Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
    Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)


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    PDF BZX91 1N825 1N827 1N829 1N914 1N916 1N4001G, CV7367 1N4002G, CV7756 Mullard Mullard quick reference guide CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier

    eeab

    Abstract: SV00733
    Text: 74LVC544A Octal D-type registered transceiver, inverting 3-State Product specification Philips Semiconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification 7At Octal D-type registered transceiver, inverting (3-State) /« -v w m A FEATURES


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    PDF 74LVC544A 74LVC640 74LVC533 eeab SV00733

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE 25E ]> • bbS3T31 aaaQbTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


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    PDF bbS3T31 BUK655-500A BUK655-500B BUK655-500C BUK655

    1645F

    Abstract: 1640F PBYR1635F m2296 sot 763 PBYR1640F PBYR1645F
    Text: a u te itE : PBYR1635F PBYR1640F PBYR1645F N AMER ESE PH ILIPS/DISCR ETE D B tbS B T B l 0 0 2 2 ^ 3 S B " ' ' 7^ 0 3 -1 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low


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    PDF PBYR1635F PBYR1640F PBYR1645F OT-186 M2284 1645F 1640F m2296 sot 763 PBYR1645F

    PCX82C200

    Abstract: SOT117 PCA82C200TD
    Text: Product specification P hilip* Sem iconductor* M icrocontroller Products Stand-alone CAN-controller 82C200 1 FEATURES 2 GENERAL DESCRIPTION • MJt-master architecture The PCA82C200; PCF82C200 hereafter generically referred to as PCX82C200 is a highly integrated


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    PDF 82C200 PCX82C200 RS232 PCA80C552 SOT117 PCA82C200TD