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    Untitled

    Abstract: No abstract text available
    Text: 1 5 1 9 9 9 9 12342154672894A6593B61CA3D2355 CD5 5 5CD5 5CD5 5 5 5 5 5 5 5  5 5 C D5 5 5 5 5 CD5 5 5 5 5 5 82325 6A25 C1AD55 555552215 5


    Original     		PDF 12342154672894A6593B61CA3D2355 51234567839AB6CB6D55555593EFF 51CAE767839AB6CB6D99 1AD55 25EF5EF 4D2614A6155 284C48B94A615 12345678178596A83B25C49D5 /1/-5C-64- 618655C>

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 6 0 B “H Y U N D A I S e r ie s 1M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION The HY51V16160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V16160B 16-bit. 42/42pin 11B3S 0083P31Q GDG47SÃ 1AD55-10-MAY95

    phc51

    Abstract: A0317
    Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit 16160B 16-bit. HY51V16160B 42/42pin D55-10-MA HY51V16160BJC 616CIBSIJC phc51 A0317