sfernice
Abstract: SH25 104M SH10 SH50 Vishay Sfernice 10 watt p 150 54 VISHAY 12W
Text: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall characteristics for industrial use
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19-Feb-02
sfernice
SH25
104M
SH10
SH50
Vishay Sfernice 10 watt
p 150 54
VISHAY 12W
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PDF
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SH25
Abstract: No abstract text available
Text: SH Vishay Sfernice Heatsink Encased Wirewound Power Resistors Industrial Applications FEATURES • ≤ 50 Watt at + 25°C • High power characteristics • Utilize heatsink capability • Good mechanical protection • Industrialized product Built for high power dissipation applications, these components have very good overall features for industrial use under
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1000h
19-Feb-02
SH25
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PDF
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E54214
Abstract: GBLA005 GBLA10
Text: GBLA005 thru GBLA10 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifiers Case Type GBL 0.825 20.9 0.815 (20.7) 0.125 (3.17) x 45 degrees Chamfer Reverse Voltage 50 and 1000V Forward Current 4.0A
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GBLA005
GBLA10
E54214
x12mm)
19-Feb-02
E54214
GBLA10
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PDF
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GBPC1005
Abstract: GBPC110
Text: GBPC1005 THRU GBPC110 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage Case Style GBPC1 50 and 1000 V Rectifier Forward Current 3.0 A 0.630 16.00 Features 0.590 (14.98) 0.445 (11.30)
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GBPC1005
GBPC110
E54214
19-Feb-02
GBPC110
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PDF
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Untitled
Abstract: No abstract text available
Text: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA)
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11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: DBZ 012058, DGZ 020036 Vishay Draloric Feed-Through Capacitors, Screw Mounting min. 1 ø 14 0.551 DIA ø 25 " 36.8 ± 1.5 (1.45 ± 0.06) = min. 1 = 62 max. (2.441 max.) 0.58 +2 (2.283 +0.08) ø 12 0.5 (0.02) 0.5 (0.02) 20 ± 1 (0.787 ± 0.04) (0.984 DIA)
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18-Jul-08
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PDF
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M11 marking
Abstract: No abstract text available
Text: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • SnPb contacts on Ni barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances
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CECC40000
EN140400
19-Feb-02
M11 marking
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PDF
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Fixed resistor
Abstract: 100MS SFERNICE RW 16
Text: RW. Vishay Sfernice Fixed Wirewound Enamelled High Dissipation Resistors Application Guide GROUP ASSEMBLY It is recommended that resistors should be installed with a distance between centres of approximately twice their diameter to aid dissipation efficiency.
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19-Feb-02
Fixed resistor
100MS
SFERNICE RW 16
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PDF
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BYV26d 800
Abstract: BYV26D BYV26E DO-204AP
Text: BYV26D and BYV26E Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Reverse Voltage 800 to 1000 V Forward Current 1.0 A DO-204AP Features 0.034 0.86 0.028 (0.71) DIA. * d e t n e t a P • • • • • 1.0 (25.4)
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BYV26D
BYV26E
DO-204AP
MIL-S-19500
50mVp-p
19-Feb-02
BYV26d 800
BYV26E
DO-204AP
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PDF
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ADS7846 driver
Abstract: KEYPAD 4 x 4 ADS7846 SA-1110 TSC2000 TSC2200 UCB1300 keypad keyboard driver sa11x0 SBAA070
Text: Application Report SBAA075 – March 2002 Windows CE Touch and Keypad Device Drivers for the TSC2200 Bob Green and Rick Downs Data Acquisition Products ABSTRACT This application report describes the development and usage of device drivers for the TSC2200 PDA Analog Interface Circuit for use in Windows CE platforms on the Intel™
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SBAA075
TSC2200
TSC2200
SA-1110
ADS7846 driver
KEYPAD 4 x 4
ADS7846
TSC2000
UCB1300
keypad keyboard driver
sa11x0
SBAA070
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PDF
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020036
Abstract: No abstract text available
Text: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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08-Apr-05
020036
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PDF
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SDHC PINOUT
Abstract: SDHC specification 9S12UF32 SDHC MECHANICAL SDHC memory reader PS3 usb sony ca6E MC9S12UF32 9S12UF32DGV1 0300-03FF
Text: MC9S12UF32 System on a Chip Guide V01.05 Original Release Date: 17 JAN 2002 Revised: 03 Dec 2004 TSPG - 8/16 Bit MCU Design, HKG Freescale Semiconductor, Inc. This product has been designed for use in “Commercial” applications. Please see a description below.
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MC9S12UF32
64-pin
9S12UF32DGV1/D
SDHC PINOUT
SDHC specification
9S12UF32
SDHC MECHANICAL
SDHC memory reader
PS3 usb sony
ca6E
MC9S12UF32
9S12UF32DGV1
0300-03FF
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PDF
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300Ve
Abstract: VISHAY MARKING SG SG2403
Text: SG3, SG4 Vishay Sfernice Cemented Wirewound Resistors FEATURES • 3 Watt and 4 Watt at + 40°C • Cemented protection • Non flammability • Industrial applications DIMENSIONS in millimeters SG3 SG4 63 ±1 6 Ø A max. 25 min. 10 ±0,5 Ø 0,8 L max. 25 min.
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300Veff
150ppm/
55/250/21S
19-Feb-02
300Ve
VISHAY MARKING SG
SG2403
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PDF
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GBPC1005
Abstract: GBPC110
Text: GBPC1005 THRU GBPC110 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Rectifier Reverse Voltage Case Style GBPC1 50 and 1000 V Rectifier Forward Current 3.0 A 0.630 16.00 Features 0.590 (14.98) 0.445 (11.30)
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GBPC1005
GBPC110
E54214
50mVp-p
19-Feb-02
GBPC110
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PDF
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0048-0210
Ceramic RF Power and HV Capacitors
dwa 108 a
kvp 42 DIODE
KT 0803 K
kvar schematic
kvp 03 diode
kvp 34 DIODE
KVP 79 A
dwa 108
Optoelectronics Device data
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PDF
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GBL005
Abstract: GBL10 gbl 05
Text: GBL005 thru GBL10 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBL Reverse Voltage 50 and 1000 V Forward Current 4.0 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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GBL005
GBL10
E54214
MIL-STD-750,
x12mm)
19-Feb-02
GBL10
gbl 05
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PDF
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DBZ 012058
Abstract: No abstract text available
Text: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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20KHz)
200pF
19-Feb-02
DBZ 012058
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PDF
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GBLA10
Abstract: GBLA005
Text: GBLA005 thru GBLA10 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifiers Case Type GBL 0.825 20.9 0.815 (20.7) 0.125 (3.17) x 45 degrees Chamfer Reverse Voltage 50 and 1000V Forward Current 4.0A
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Original
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GBLA005
GBLA10
E54214
50mVp-p
19-Feb-02
GBLA10
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PDF
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G3SBA20
Abstract: G3SBA60 G3SBA80
Text: G3SBA20 and G3SBA80 Vishay Semiconductors New Product formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Features Case Type GBU 0.125 3.2 x 45o CHAMFER 9o TYP. 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) • Plastic package has Underwriters Laboratory
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G3SBA20
G3SBA80
19-Feb-02
G3SBA60
G3SBA80
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PDF
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Untitled
Abstract: No abstract text available
Text: G4A thru G4J Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Hermetically sealed package
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MIL-S-19500
MIL-STD-750,
50mVp
19-Feb-02
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PDF
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4r85
Abstract: 020036
Text: DBZ 012058, DGZ 020036 DBZ 012058 7.5KVp DGZ 020036 min.1 min. 0.04 Vishay Draloric Feed-Through Capacitors, Screw Mounting 5KVDC ø 25 (0.984 DIA) 36.8 ± 1.5 (1.45 ± 0.06) = min.1 min. 0.04 = 62 max. (2.441 max.) + 0.08 (2.283 58 +2 ) 0.5 (0.02) 20 ± 1
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Original
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20KHz)
200pF
19-Feb-02
4r85
020036
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PDF
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sfernice
Abstract: Ni Cr Wire
Text: SG3, SG4 Vishay Sfernice Cemented Wirewound Resistors FEATURES • 3 Watt and 4 Watt at + 40°C • Cemented protection • Non flammability • Industrial applications DIMENSIONS in millimeters SG3 SG4 63 ±1 6 Ø A max. 25 min. 10 ±0,5 Ø 0,8 L max. 25 min.
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150ppm/
19-Feb-02
sfernice
Ni Cr Wire
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PDF
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GBPC6005
Abstract: GBPC610
Text: GBPC6005 THRU GBPC610 Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Style GBPC 0.630 16.00 0.590 (14.98) Features 0.445 (11.30) 0.405 (10.29) HOLE FOR #6 SCREW 0.158 (4.01) • Plastic package has Underwriters Laboratory
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GBPC6005
GBPC610
E54214
50mVp-p
19-Feb-02
GBPC610
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PDF
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plc wiring diagram
Abstract: RJ45 WIRING diagram 8072C BEET
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 RELEASED FOR AL L COPYRIGHT PUBLICATION RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D DIM A P2 MDD PLUG ¿i B ( P I ) 1 10 P L UG •> 2 rP ■>3 BLU WHT/BLU WIRING A AMP 1 4 7 1 - 9 l _ REV 31M A R 2000
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OCR Scan
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31MAR2000
0B10-0024-02
19FEB02
REV-ECD-08-024786
07DCT08
21FEB2002
0/RJ45
plc wiring diagram
RJ45 WIRING diagram
8072C
BEET
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PDF
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