BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
|
OCR Scan
|
PDF
|
b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
|
2N6377
Abstract: 2N6378 2N6379 2N637
Text: MOTOROLA xstrs/ r sc 12E 0 § f b3b?2S4 Q0fi4b3fc. T | • f- 3 0 '2 3 2N6377 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N6379 HIGH-POWER PNP SILICON TRANSISTORS . . . designed for use in industrial-military power amplifier and switching circuit applications.
|
OCR Scan
|
PDF
|
aG04b3b
2N6377
2N6379
2N6378
25/is
2N6274-77
2N6377
2N6378
2N6379
2N637
|
BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
|
OCR Scan
|
PDF
|
b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
|
MTM45N15
Abstract: 05gw tj3b
Text: MOTORGLA SC X S T R S /R IM E D I F b 3 t>7 2 SM O C H O U l M1 1 T -3 7 -/S MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM45N15 P o w e r Field E ffe c t T ra n s isto r N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FET 45 AMPERES
|
OCR Scan
|
PDF
|
MTM45N15
0X163
197A02
MTM45N15
05gw
tj3b
|
IR 92 0151
Abstract: MM5680 to204ae
Text: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications
|
OCR Scan
|
PDF
|
MM5680
MIL-S-19500/xxx
O-116)
IR 92 0151
MM5680
to204ae
|
NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
|
OCR Scan
|
PDF
|
MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
|
245A-02
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per
|
OCR Scan
|
PDF
|
h3b7254
MIL-S-19500/
O-116)
245A-02
|
Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost
|
OCR Scan
|
PDF
|
AN415A)
|
1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
|
OCR Scan
|
PDF
|
DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
|
20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
|
OCR Scan
|
PDF
|
|
IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
|
OCR Scan
|
PDF
|
VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
|
MM3497
Abstract: AA146
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 GD'iSM'î'i Q ■ MOTb 7^27-01 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3497 DM0 Discrete Military Products P N P S ilic o n Sm all-Sign al T ra n sisto r Suffixes: HX, HXV /////// Processed per MIL-S-19500/xxx . . . designed for general-purpose switching and amplifier applications
|
OCR Scan
|
PDF
|
b3b72S4
MM3497
MIL-S-19500/xxx
O-116)
MM3497
AA146
|
MD2484
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F HbE D • b3b?25M 00*12421, b ■ M O T b T ^ -iS MOTOROLA ■i SEMICONDUCTOR wmmÊÊmmmm TECHNICAL DATA ( MD2484F DM0 Discrete Military Products lllllll NPIM S ilic o n Dual/Q uad S m a ll-S ig n a l T ra n sisto rs (Duals) MHQ2484
|
OCR Scan
|
PDF
|
MD2484F
MHQ2484
MQ2484
MIL-S-19500/376
10A-04
O-116)
MD2484
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M D2905AF DM0 Discrete Military Products PIMP S ilic o n D u a l S m a ll-S ig n a l T ra n sisto r ) Suffixes: HX, H X V /////// Processed per MIL-S-19500/290 . designed for general-purpose switching and amplifier applications
|
OCR Scan
|
PDF
|
D2905AF
MIL-S-19500/290
O-116)
|
|
|
mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Text: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
|
OCR Scan
|
PDF
|
3b72S4
MM3735
MM3737
MIL-S-19500/395B
O-116)
mt 1389 de
mt 1389 de ic
NS 8002 1151
mt 1389 de motorola
2N3737
2N3735
TO-206AB
|
mjM6052
Abstract: No abstract text available
Text: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs
|
OCR Scan
|
PDF
|
MIL-S-19500/
O-116)
mjM6052
|
DIODE MOTOROLA 633
Abstract: NS 8002 1151 MQ6002I
Text: MOTOROLA SC XSTRS/R F *4bE D b3b?2S4 OO T E Mb B 1 I MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products Power Field-Effect Transistor DM0 mini N-Channel Enhancement-Mode Silicon Gate TM OS, with Current Sensing Capability MHR35N06M Suffixes:
|
OCR Scan
|
PDF
|
MHR35N06M
MIL-S-19500/547
O-116)
DIODE MOTOROLA 633
NS 8002 1151
MQ6002I
|
MD3799
Abstract: No abstract text available
Text: MOTOROLA SC X S T R S / R F b3fc>725M QG*i2M3a 2 • n O T b 'F H V Z S MOTOROLA SEMICONDUCTOR i TECHNICAL DATA ( Discrete Military Products DM0 lUfllf PNP Silicon Dual/Quad Sm all-Signal Transistors M D 3799 (Duals) M HQ 3799 M Q 3799 (Quads) Suffixes:
|
OCR Scan
|
PDF
|
MIL-S-19500/XXX
3799F
O-116)
MD3799
|
MTH15N20
Abstract: MTM15N20 H15N
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 1 5N 2 0 M TM 15N 20 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS T These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,
|
OCR Scan
|
PDF
|
MTH/MTM15N20
MTH15N20
MTM15N20
H15N
|
MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
|
OCR Scan
|
PDF
|
b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
|
MTM15N35
Abstract: 15N 50 mosfet 15N45
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 15 A M P E R E S These TM O S Pow er FETs are designed fo r high v o lta g e , high
|
OCR Scan
|
PDF
|
MTM15N45,
MTM15N35
15N 50 mosfet
15N45
|
mosfet IRF240
Abstract: IRF241 irf240 IRF243 power MOSFET IRF240
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF240 IRF241 IRF243 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid
|
OCR Scan
|
PDF
|
IRF240
IRF241
IRF243
97A-02
O-204AE
IRF240,
mosfet IRF240
IRF243
power MOSFET IRF240
|
NS 8002 1151
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F M OTOROLA _ 4bE J> • b 3 b ? 2 S l4 00=12471, T ■ r i 0 T b 7 r5 ^ / / S E M IC O N D U C T O R TECHNICAL DATA M H T 12N 10 Suffixes: Discrete M ilitary Products HX, HXV m in t P o w e r F ie ld -E ffe c t T r a n s is t o r Processed per
|
OCR Scan
|
PDF
|
MIL-S-19500/547
O-116)
NS 8002 1151
|
mrf544
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D • ( b3b?2SM QGR2S1S S ■MOTb MOTOROLA h SEMICONDUCTOR ■h h h h h h ih h TECHNICAL DATA Discrete M ilitary Products MRF544,A DM0 (NPN) MRF545,A (PNP) NPN/PNP Silicon /////I/ RF Com plem entry Transistors Suffixes: HX, HXV
|
OCR Scan
|
PDF
|
MRF544
MRF545
MIL-S-19500/xxx
O-116)
|
