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    190MA Price and Stock

    Shenzhen Grepow Battery Co Ltd GRP3922031-1C-3.7V-190MAH

    BATTERY LITH POLY 3.7V 190MAH
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    DigiKey GRP3922031-1C-3.7V-190MAH Box 48
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    Belden Inc FMSMFA1190MAMDY

    FMT OS2 MPO12(F-F) A 12F 190M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FMSMFA1190MAMDY Bulk 1
    • 1 $1900.91
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    Mouser Electronics FMSMFA1190MAMDY
    • 1 $1900.7
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    Belden Inc FM4MMB1190MAMDE

    FMT OM4 MPO12(M-M) B 12F 190M
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    DigiKey FM4MMB1190MAMDE Bulk 1
    • 1 $3337.67
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    Mouser Electronics FM4MMB1190MAMDE
    • 1 $3337.23
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    Shenzhen Grepow Battery Co Ltd GRP392231-3.7V-190MAH

    BATTERY LITH POLY 3.7V 190MAH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GRP392231-3.7V-190MAH Box 1
    • 1 $5.99
    • 10 $5.99
    • 100 $5.99
    • 1000 $5.99
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    SKF Cooper ATL190M (ALTERNATE: COP.ATL190M)

    Cooper Seals, Bore Dia. 190 mm | Cooper Bearings (SKF) ATL190M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ATL190M (ALTERNATE: COP.ATL190M) Bulk 1 Weeks 1
    • 1 $1485
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    Find more 190MA price and stock on Findchips.com

    190MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions


    Original     		PDF BRC2016T680K 200mA, 190mA, 2000pcs 200mA 190mA

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions


    Original     		PDF BRC2016T680K 200mA, 190mA, 2000pcs 200mA 190mA

    radioactivity detector

    Abstract: matrix led driver rohm 574
    Text: 1/4 ● Structure ● Product Silicon Monolithic Integrated Circuit 7 x 7 Matrix LED DRIVER for Mobile Phone ● Type ● Figure BH6948GU 1. 2. 3. 4. 5. 6. Highly effective Charge Pump circuit that can be switched 1 time, 1.5 times, and 2 times pressure automatically. 190mA / MAX


    Original     		PDF BH6948GU 190mA 31mA/ch, 62pin R0039A radioactivity detector matrix led driver rohm 574

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original     		PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    PVT312LS-T

    Abstract: PVT312 PVT312L PVT312LS PVT312S PVT312S-T
    Text: Data Sheet No. PD 10038D Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace


    Original     		PDF 10038D PVT312 190mA PVT312 PVT312L PVT312LS-T PVT312LS PVT312S PVT312S-T

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original     		PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CB2012T100KV Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified


    Original     		PDF CB2012T100KV 190mA, 440mA, AEC-Q200 3000pcs 52MHz 190mA 440mA

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100K Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original     		PDF CB2012T100K 190mA, 440mA, 3000pcs 52MHz 190mA 440mA 32MHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2012T4R7M Features Item Summary 4.7 H(±20%), 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original     		PDF LB2012T4R7M 190mA, 3000pcs 96MHz 190mA 45MHz

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage


    Original     		PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T470K Features Item Summary 47 H(±10%), 90mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original     		PDF CB2012T470K 190mA, 3000pcs 52MHz 190mA 11MHz

    LX5506LQ-TR

    Abstract: LX5506 LX5506LQ
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original     		PDF LX5506 64QAM, 54Mbps) 18dBm 190mA 24dBm LX5506 16-pin LX5506LQ-TR LX5506LQ

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T220K Features Item Summary 22 H(±10%), 170mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original     		PDF CBC2012T220K 170mA, 190mA, 3000pcs 52MHz 170mA 190mA 16MHz

    Untitled

    Abstract: No abstract text available
    Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total


    Original     		PDF LX5506 18dBm 64QAM/ 54Mbps 26dBm 25GHz 100mA 85GHz 190mA

    BD1603

    Abstract: No abstract text available
    Text: Datasheet 1-Channel 190mA Charge Pump White LED Driver with 1-wire Serial Interface BD1603NUV ●General Description The high-power large current output type LED driver is a white LED driver best suited for applications that require the large current. It is equipped with output voltage and


    Original     		PDF 190mA BD1603NUV BD1603

    PVT312L

    Abstract: ic 7380 PVT312 PVT312LS PVT312LS-T PVT312S PVT312S-T
    Text: Data Sheet No. PD 10038C Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description PVT312L Features The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace


    Original     		PDF 10038C PVT312 190mA PVT312L PVT312 5M-1982 ic 7380 PVT312LS PVT312LS-T PVT312S PVT312S-T

    BRC2518T101K

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T101K Features Item Summary 100 H(±10%), 300mA, 190mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions


    Original     		PDF BRC2518T101K 300mA, 190mA, 2000pcs 300mA 190mA BRC2518T101K

    K0032

    Abstract: Y255 QN22
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)


    OCR Scan     		PDF KM741006J 01772A KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil TTbm45 K0032 Y255 QN22

    syncronous

    Abstract: KM741006J-10 256kx4 256Kx4 SRAM
    Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply


    OCR Scan     		PDF KM741006J 256Kx4 KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil syncronous KM741006J-10 256Kx4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM74B4006 1M x 4 Syncronous SRAM 1,048,576 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time : 10, 12, 15ns Max. • Low Power Dissipation KM74B4006-10 : 190mA (Max.) KM74B4006-12 : 185mA (Max.)


    OCR Scan     		PDF KM74B4006 KM74B4006-10 190mA KM74B4006-12 185mA KM74B4006-15 180mA 400mil A0-A19 71tm42

    Untitled

    Abstract: No abstract text available
    Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)


    OCR Scan     		PDF KM741006J 256Kx4 KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil KM741006J

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)


    OCR Scan     		PDF GG177EÃ KM741006J KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil KM741006J

    Untitled

    Abstract: No abstract text available
    Text: .410 MAX 190MAX. BLUE BEAD 1.320 MAX. 1.078 .600 + .003 030 - .002 DIA. PINS .200 .2 5 0 * oio COIL: 0 +25 a C CUSTOMER DATA SHEET 700 OHMS t 10% RESISTANCE MUST OPERATE _ 26.5 VDC 15.0 VDC MUST RELEASE _ 1.5 VDC NOMINAL VOLTAGE BLUE BEAD ENVIRONMENT: VIBRATION


    OCR Scan     		PDF 190MAX. M39016/22-007H

    Untitled

    Abstract: No abstract text available
    Text: FÉE 8 4 1593 PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5% Power Supply


    OCR Scan     		PDF KM741006J KM741006J-12: 190mA 741006J