NPT35015
Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power
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NPT35015
6000MHz
EAR99
NDS-005
NPT35015D
r04350
12061C103KAT2A
JESD22-A114
JESD22-A115
j146
NPT35015DT
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PDF
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18W 12 transistor
Abstract: TDA7481
Text: TDA7481 18W MONO CLASS-D AMPLIFIER PRODUCT PREVIEW 18W OUTPUT POWER: RL = 8Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION
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TDA7481
TDA7481
Multiwatt15
Multiwatt15
100nF
560pF
470nF
18W 12 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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NPT35015
EAR99
NDS-005
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PDF
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COIL58120
Abstract: MULTIWATT15 package tda7481
Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
100nF
COIL58120
MULTIWATT15 package
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PDF
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MULTIWATT15 package
Abstract: MULTIWATT15 TDA7481
Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15
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Original
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
100nF
MULTIWATT15 package
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power
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Original
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NPT35015
EAR99
NDS-005
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PDF
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MULTIWATT15
Abstract: TDA7481 18W 12 transistor
Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15
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Original
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
100nF
18W 12 transistor
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PDF
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TDA7481
Abstract: No abstract text available
Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15
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Original
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
100nF
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PDF
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tda7381 audio amplifier circuit diagram
Abstract: No abstract text available
Text: TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Ω EIAJ 4 x 18W/4Ω @ 14.4V, 1KHz, 10% 4 x 15W/4Ω @ 13.2V, 1KHz, 10% CLIPPING DETECTOR LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION
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TDA7381
FLEXIWATT25
tda7381 audio amplifier circuit diagram
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PDF
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TDA7381
Abstract: TDA7385 tda7381 audio amplifier circuit diagram FLEXIWATT25
Text: TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Ω EIAJ 4 x 18W/4Ω @ 14.4V, 1KHz, 10% 4 x 15W/4Ω @ 13.2V, 1KHz, 10% CLIPPING DETECTOR LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION
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TDA7381
FLEXIWATT25
TDA7381
TDA7385
tda7381 audio amplifier circuit diagram
FLEXIWATT25
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PDF
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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18w transistor
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
18w transistor
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PDF
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S2-1111
Abstract: No abstract text available
Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package
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PD57018-E
PD57018S-E
945MHz
PowerSO-10RF
PD57018
PowerSO-10RF.
S2-1111
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PDF
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2SC2782A
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782A
175MHz,
2SC2782A
2SC2782
NPN 2SC2782
transistor 2sc2782
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PDF
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S2-1111
Abstract: No abstract text available
Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package
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Original
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PD57018-E
PD57018S-E
945MHz
PowerSO-10RF
PD57018
PowerSO-10RF.
S2-1111
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PDF
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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Original
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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PDF
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NPN 2SC2782
Abstract: transistor 2sc2782
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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2SC2782A
175MHz,
2-13C1A
2SC2782
NPN 2SC2782
transistor 2sc2782
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PDF
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NPN 2SC2782
Abstract: No abstract text available
Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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Original
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2SC2782A
175MHz,
2-13C1A
2SC2782
NPN 2SC2782
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PDF
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8Q transistor
Abstract: tda7481 COIL77120 MULTIWATT15
Text: - , SGS-THOMSON TDA7481 k7 # . RfflDtgœHILIÊ'înSORÔDtgS 18W M O NO CLASS-D AMPLIFIER PRO DU CT PREVIEW • 18W OUTPUT POWER: R l = 8£i/4£i; THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION
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OCR Scan
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TDA7481
TDA7481
Multiwatt15
Multiwatt15
8Q transistor
COIL77120
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON TDA7481 ilLKgTOORDI 18W MONO CLASS-D AMPLIFIER • 18W OUTPUT POWER: Rl = 8£2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ WIDE SUPPLY VOLTAGE RANGE UP TO ±25V ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION
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OCR Scan
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
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PDF
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MA6520
Abstract: inductive proximity detector ic
Text: /= T ^7 # . S G S -T H O M S O N TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW • HIGH OUTPUT POWER CAPABILITY: 4 x25W/4£i EIAJ 4 x 18W/4£2 @ 14.4V, 1KHz, 10% 4 x 15W/4£2 @ 13.2V, 1KHz, 10% ■ CLIPPING DETECTOR ■ LOW DISTORTION ■ LOW OUTPUT NOISE
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OCR Scan
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TDA7381
x25W/4
FLEXIWATT25
MA6520
inductive proximity detector ic
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TDA7481 5 7 . KfflD g[Si llLi(gra©lii!lD(gi 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW 18W OUTPUT POWER: RL = 8i2; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE (UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES
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OCR Scan
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TDA7481
att15
TDA7481
Multiwatt15
100nF
10OnF
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-1H0 MS0 N 57. \M Q ^©[llL[E©TO [iìQO©Ì T DA 7481 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 18W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION
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OCR Scan
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att15
TDA7481
Multiwatt15
TDA7481
100nF
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PDF
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33PFX4
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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OCR Scan
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2SC2782
175MHz,
2-13C1A
961001EAA2'
33PFX4
2SC2782
NPN 2SC2782
transistor 2sc2782
18W 12 transistor
1BW TRANSISTOR
10ID
10A ferrite bead
132pF
156pF
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PDF
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