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    18W TRANSISTOR Search Results

    18W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    18W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    18W 12 transistor

    Abstract: TDA7481
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER PRODUCT PREVIEW 18W OUTPUT POWER: RL = 8Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION


    Original     		PDF TDA7481 TDA7481 Multiwatt15 Multiwatt15 100nF 560pF 470nF 18W 12 transistor

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    COIL58120

    Abstract: MULTIWATT15 package tda7481
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15


    Original     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF COIL58120 MULTIWATT15 package

    MULTIWATT15 package

    Abstract: MULTIWATT15 TDA7481
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15


    Original     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF MULTIWATT15 package

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    MULTIWATT15

    Abstract: TDA7481 18W 12 transistor
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15


    Original     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF 18W 12 transistor

    TDA7481

    Abstract: No abstract text available
    Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15


    Original     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15 100nF

    tda7381 audio amplifier circuit diagram

    Abstract: No abstract text available
    Text: TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Ω EIAJ 4 x 18W/4Ω @ 14.4V, 1KHz, 10% 4 x 15W/4Ω @ 13.2V, 1KHz, 10% CLIPPING DETECTOR LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION


    Original     		PDF TDA7381 FLEXIWATT25 tda7381 audio amplifier circuit diagram

    TDA7381

    Abstract: TDA7385 tda7381 audio amplifier circuit diagram FLEXIWATT25
    Text: TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW HIGH OUTPUT POWER CAPABILITY: 4 x 25W/4Ω EIAJ 4 x 18W/4Ω @ 14.4V, 1KHz, 10% 4 x 15W/4Ω @ 13.2V, 1KHz, 10% CLIPPING DETECTOR LOW DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION


    Original     		PDF TDA7381 FLEXIWATT25 TDA7381 TDA7385 tda7381 audio amplifier circuit diagram FLEXIWATT25

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25

    18w transistor

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor

    S2-1111

    Abstract: No abstract text available
    Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package


    Original     		PDF PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111

    2SC2782A

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    Original     		PDF 2SC2782A 175MHz, 2SC2782A 2SC2782 NPN 2SC2782 transistor 2sc2782

    S2-1111

    Abstract: No abstract text available
    Text: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package


    Original     		PDF PD57018-E PD57018S-E 945MHz PowerSO-10RF PD57018 PowerSO-10RF. S2-1111

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G6001528-Q3 T2G6001528-Q3 TQGaN25

    NPN 2SC2782

    Abstract: transistor 2sc2782
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF 2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782 transistor 2sc2782

    NPN 2SC2782

    Abstract: No abstract text available
    Text: 2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm z Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF 2SC2782A 175MHz, 2-13C1A 2SC2782 NPN 2SC2782

    8Q transistor

    Abstract: tda7481 COIL77120 MULTIWATT15
    Text: - , SGS-THOMSON TDA7481 k7 # . RfflDtgœHILIÊ'înSORÔDtgS 18W M O NO CLASS-D AMPLIFIER PRO DU CT PREVIEW • 18W OUTPUT POWER: R l = 8£i/4£i; THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION


    OCR Scan     		PDF TDA7481 TDA7481 Multiwatt15 Multiwatt15 8Q transistor COIL77120

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-THOMSON TDA7481 ilLKgTOORDI 18W MONO CLASS-D AMPLIFIER • 18W OUTPUT POWER: Rl = 8£2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ WIDE SUPPLY VOLTAGE RANGE UP TO ±25V ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION


    OCR Scan     		PDF TDA7481 Multiwatt15 TDA7481 Multiwatt15

    MA6520

    Abstract: inductive proximity detector ic
    Text: /= T ^7 # . S G S -T H O M S O N TDA7381 4 x 18W BRIDGE CAR RADIO AMPLIFIER PRODUCT PREVIEW • HIGH OUTPUT POWER CAPABILITY: 4 x25W/4£i EIAJ 4 x 18W/4£2 @ 14.4V, 1KHz, 10% 4 x 15W/4£2 @ 13.2V, 1KHz, 10% ■ CLIPPING DETECTOR ■ LOW DISTORTION ■ LOW OUTPUT NOISE


    OCR Scan     		PDF TDA7381 x25W/4 FLEXIWATT25 MA6520 inductive proximity detector ic

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON TDA7481 5 7 . KfflD g[Si llLi(gra©lii!lD(gi 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW 18W OUTPUT POWER: RL = 8i2; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE (UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES


    OCR Scan     		PDF TDA7481 att15 TDA7481 Multiwatt15 100nF 10OnF

    Untitled

    Abstract: No abstract text available
    Text: SGS-1H0 MS0 N 57. \M Q ^©[llL[E©TO [iìQO©Ì T DA 7481 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 18W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION


    OCR Scan     		PDF att15 TDA7481 Multiwatt15 TDA7481 100nF

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF