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    Abstract: No abstract text available
    Text: AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -100V RDS ON Simple Drive Requirement 180m ID Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the


    Original     		AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ PDF

    18P10GH

    Abstract: 18P10GJ AP18P10GH 18P10G
    Text: AP18P10GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement BVDSS -100V RDS ON 180mΩ ID ▼ Fast Switching Characteristic G -12A S Description Advanced Power MOSFETs from APEC provide the


    Original     		AP18P10GH/J -100V O-252 AP18P10GJ) O-251 O-251 18P10GJ 18P10GH 18P10GJ AP18P10GH 18P10G PDF