Untitled
Abstract: No abstract text available
Text: DAC8811 www.ti.com SLAS411 – NOVEMBER 2004 16-Bit, Serial Input Multiplying Digital-to-Analog Converter • • • • • • • • • • • • • 16-Bit Monotonic ±1 LSB INL ±0.5 LSB DNL Low Noise: 12 nV/√Hz Low Power: IDD = 2 µA +2.7 V to +5.5 V Analog Power Supply
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DAC8811
SLAS411
16-Bit,
16-Bit
50-MHz
DAC8811
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Untitled
Abstract: No abstract text available
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
VND810PEP-E
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diode B3 7
Abstract: ST4G3234 ST4G3234BJR STMicroelectronics DIODE marking code EE
Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C
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ST4G3234
diode B3 7
ST4G3234
ST4G3234BJR
STMicroelectronics DIODE marking code EE
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M29W320E
Abstract: M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29W320ET
M29W320EB
M29W320E
M29W320EB
M29W320ET
TFBGA48
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Untitled
Abstract: No abstract text available
Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C
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ST4G3234
500mA
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automatic phase selector circuit diagram
Abstract: No abstract text available
Text: Preliminary Information Integrated Circuit Systems, Inc. M2040 FREQUENCY TRANSLATION PLL WITH AUTOSWITCH The M2040 is a VCSO Voltage Controlled SAW Oscillator based clock generator PLL designed for clock protection, frequency translation and jitter attenuation in fault tolerant
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M2040
M2040
18Nov2004
automatic phase selector circuit diagram
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M29W320E
Abstract: M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29W320ET
M29W320EB
M29W320E
M29W320EB
M29W320ET
TFBGA48
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10858
Abstract: Powersso-12
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND810PEP-E
VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
10858
Powersso-12
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Untitled
Abstract: No abstract text available
Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND810PEP-E
160mW
PowerSSO-12
2002/95/EC
VND810PEP-E
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M29W320
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns
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M29W320ET
M29W320EB
2Mbx16,
M29W320
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Untitled
Abstract: No abstract text available
Text: TPS3806J20 TPS3806I33 www.ti.com SLVS393A – JULY 2001 – REVISED NOVEMBER 2004 Dual Voltage Detector with Adjustable Hysteresis FEATURES • • • • • • DESCRIPTION Dual Voltage Detector With Adjustable Hysteresis 3.3-V/Adjustable and 2-V/Adjustable
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TPS3806J20
TPS3806I33
SLVS393A
OT-23
TPS3806
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ISO7637
Abstract: JESD97 VND810PEP-E VND810PEPTR-E VNQ810PEP-E Powersso-12
Text: VND810PEP-E Double channel high side driver Features Type RDS on IOUT VCC VNQ810PEP-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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VND810PEP-E
VNQ810PEP-E
PowerSSO-12
2002/95/EC
VND810PEP-E
ISO7637
JESD97
VND810PEPTR-E
VNQ810PEP-E
Powersso-12
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m29w32
Abstract: JESD97 M29W320E M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■
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M29W320ET
M29W320EB
2Mbx16,
TSOP48
m29w32
JESD97
M29W320E
M29W320EB
M29W320ET
TFBGA48
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ST4G3234
Abstract: ST4G3234BJR
Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C
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ST4G3234
500mA
ST4G3234
ST4G3234BJR
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CR10
Abstract: J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B
Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58WR032FT
M58WR032FB
66MHz
CR10
J-STD-020B
M58WR032FB
M58WR032FT
VFBGA56
JEDEC J-STD-020B
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Untitled
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time
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M29W320ET
M29W320EB
2Mbx16,
TSOP48
TFBGA48
FBGA64
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Untitled
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time
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M29W320ET
M29W320EB
2Mbx16,
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T8686
Abstract: LE520
Text: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58WR032FT
M58WR032FB
66MHz
T8686
LE520
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TPS51030
Abstract: stv 2246 h Inventec 23PM C315 S101B YL2 sot23 LPC47N249 C1142 C11952 TP678
Text: Approvals Revisions TABLE OF CONTENTS REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. SYMPHONY 1.0 DISCRETE PAGE 4 - CLOCK GENERATOR 5-8 - DOTHAN PROCESSOR 9-14 - ALVISO 15-18 - DDR 19 - MXM CONNECTOR 20 - CRT CONNECTOR 21 -LCD INTERFACE 22-26- ICH6-M
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CN6001
PS11BT
SW6001
CN6000
PS11BT
62DGND
FIX18
FIX17
FIX19
FIX20
TPS51030
stv 2246 h
Inventec
23PM C315
S101B
YL2 sot23
LPC47N249
C1142
C11952
TP678
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Untitled
Abstract: No abstract text available
Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C
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ST4G3234
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M29W320E
Abstract: M29W320EB m29w320et JESD97 TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■
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M29W320ET
M29W320EB
2Mbx16,
TSOP48
M29W320E
M29W320EB
m29w320et
JESD97
TFBGA48
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 16 LTR DESCRIPTION N ZINC D DATE PER EC OS1 4 —0 1 8 4 —04 PER OWN 18NOV2004 APVD JGH JL QQ-Z-363.
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18NOV2004
QQ-Z-363.
QQ-C-530.
04/xm
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST 16 AJ R E V IS IO N S LTR DESCRIPTION DATE EC PER 0 S 1 4 - 0 1 9 2 - 0 4 DWN 18NOV2004 APVD JGH JL D D USE P R O - C R IM P E R II HAND TOOL
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18NOV2004
02MAY96
31MAR2000
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proner comatel
Abstract: PRONER comatel SAC300
Text: 2 6 THIS M DRAWING IS U N P U 8 1 1S H E 0. BY C O PY RI G HT 2004 RELEASED TYCO ELECTRON I C S CORPORATION. AL L toc 2004 FOR P U 0 L ICA TION DIST REV I S IONS 00 R [ GHTS R E S E R V E D . LTR O D a t e u r Annue I - M e n s u e FIRST M O N T A GE DE C O N T R O L E
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03FE82004
I6NOV2004
03MAR2005
ERAO-0084-05
3IMAR20
00dSH£
proner comatel
PRONER
comatel
SAC300
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