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    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1800 A 2820 A 32000 A 1.2 V 0.43 mΩ Ω Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA1010-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


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    PDF 18M6500 5SYA1010-03 18M6500 18M6200 18M5800 CH-5600

    18M6500

    Abstract: No abstract text available
    Text: Key Parameters VDSM = 6500 ITAVM = 1800 ITRMS = 2820 ITSM = 32000 VT0 = 1.20 rT = 0.430 V A A A V mΩ Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA 1010-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    PDF 18M6500 18M6500 18M6200 18M5800 67xVDRM CH-5600

    5STP18M6500

    Abstract: No abstract text available
    Text: VDSM = 6500 V ITAVM = 1800 A ITRMS = 2820 A ITSM = 32000 A VT0 = 1.20 V rT = 0.430 mΩ Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA1010-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    PDF 5SYA1010-03 18M6500 18M6500 18M6200 18M5800 67xVDRM 11ing CH-5600 5STP18M6500

    5STp18m6500

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1800 A 2820 A 32000 A 1.20 V 0.430 mΩ Ω Phase Control Thyristor 5STP 18M6500 Doc. No. 5SYA1010-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    PDF 18M6500 5SYA1010-03 18M6200 18M5800 CH-5600 5STp18m6500