Untitled
Abstract: No abstract text available
Text: Zener Diode Datasheet KDZV series Dimensions Unit : mm Application Voltage regulation Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 1) Small power mold type. (PMDU) 2) High ESD tolerance 3.5±0.2 3.05 Features
|
Original
|
OD-123
KDZV10B
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Zener Diode Datasheet KDZ series Dimensions Unit : mm Application Voltage regulation Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 ① 2) High ESD tolerance 2.6±0.1 1) Small power mold type. (PMDU) 3.5±0.2 3.05 Features
|
Original
|
OD-123
KDZ10B
R1102A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF7738L2PbF DirectFET Power MOSFET V BR DSS 40V RDS(on) typ. 1.2mΩ max. 1.6mΩ ID (Silicon Limited) 184A Qg 129nC Features • Advanced Process Technology • Optimized for Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile
|
Original
|
IRF7738L2PbF
129nC
IRF7738L2TR
022mH,
|
PDF
|
IRF9610S
Abstract: SiHF9610S
Text: IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • P-Channel • Fast Switching • Ease of Paralleling
|
Original
|
IRF9610S,
SiHF9610S
2002/95/EC
O-263)
11-Mar-11
IRF9610S
|
PDF
|
IRF9610
Abstract: SiHF9610 SiHF9610-E3
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements
|
Original
|
IRF9610,
SiHF9610
O-220
O-220
11-Mar-11
IRF9610
SiHF9610-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements
|
Original
|
IRF9610,
SiHF9610
O-220
11-Mar-11
|
PDF
|
4C3 zener diode
Abstract: 6b2 zener diode 39A zener diode Zener Diode 4C3 5c1 zener diode 5a6 zener diode 4C3 diode diode zener 33c 2B2 zener diode zener 6c2
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Value Units 200 mW TSTG Power Dissipation Storage Temperature Range
|
Original
|
200mW
OD-323
4C3 zener diode
6b2 zener diode
39A zener diode
Zener Diode 4C3
5c1 zener diode
5a6 zener diode
4C3 diode
diode zener 33c
2B2 zener diode
zener 6c2
|
PDF
|
IRF9620S
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount
|
Original
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
11-Mar-11
IRF9620S
|
PDF
|
4C3 zener diode
Abstract: diode zener 33c 5c1 zener diode 39A zener diode zener 6c2 9c1 zener diode diode zener 3A0 5a6 zener diode 8c2 zener diode 6b2 zener diode
Text: SE MICO NDU C TOR 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Value Units 200 mW TSTG Power Dissipation Storage Temperature Range
|
Original
|
200mW
OD-323
4C3 zener diode
diode zener 33c
5c1 zener diode
39A zener diode
zener 6c2
9c1 zener diode
diode zener 3A0
5a6 zener diode
8c2 zener diode
6b2 zener diode
|
PDF
|
IRF9620
Abstract: SiHF9620 SiHF9620-E3
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF9620
SiHF9620-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET • V BR DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile
|
Original
|
AUIRF8736M2TR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements
|
Original
|
IRF9610,
SiHF9610
O-220
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRF9610
Abstract: No abstract text available
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements
|
Original
|
IRF9610,
SiHF9610
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF9610
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 COMPLIANT • Lead (Pb)-free Available DESCRIPTION
|
Original
|
IRF9610,
SiHF9610
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements
|
Original
|
IRF9610,
SiHF9610
O-220
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
