Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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Untitled
Abstract: No abstract text available
Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W28J320B/T
16/4M
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Untitled
Abstract: No abstract text available
Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
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W28F321BT/TT
32MBIT
W28F321,
W28F321
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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3582B
Abstract: AT49BV322D AT49BV322DT AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3582B
AT49BV322D
AT49BV322DT
AT49BV
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UM0560
Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard
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UM0560
UM0560
STM8S105x6
STM8L
STM8 bootloader
STM8S105XX
STM8S
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LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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LH28F320BFHE-PBTL80
LHF32F12
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F320BFHE-PBTL80
AP-007-SW-E
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circuit card assy input filter for miller 200 Dx
Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Text: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper
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TMS320C3x
SPRU194
TMS320C3x
circuit card assy input filter for miller 200 Dx
64 point radix 2 FFT
LM318 list
DSP101
74AS20 TTL
radix-4 DIT FFT C code
TLC32040C
TMS320
TMS320C31
TMS320C32
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110R
Abstract: S29GL128N
Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this
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Am29LV6402M
S29GL128N
110R
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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LH28F640BFHG-PBTL70A
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHG-PBTL70A
64Mbit
4Mbitx16)
LHF64FH9)
FM045022A
LHF64FH9
LH28F640BFHG-PBTL70A
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WH17
Abstract: BC118 VP2122 bc102 "SERIES MELPS 740" BC117 transistor BC118 bbc cs5 BC78 "MELPS 740"
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37274MA-XXXSP
WH17
BC118
VP2122
bc102
"SERIES MELPS 740"
BC117
transistor BC118
bbc cs5
BC78
"MELPS 740"
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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LRS1830
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.
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LRS1830
LRS1830)
EL14Z046
LRS1830
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M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
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M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
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M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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