187 NPN TRANSISTOR Search Results

187 NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

187 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CIL TRANSISTOR 188 Abstract: CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL187 CIL188 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188	Original	PDF	C-120 CIL187 Rev060901 CIL TRANSISTOR 188 CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL188
CIL TRANSISTOR 188 Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	C-120 CIL187 Rev060901 CIL TRANSISTOR 188
CIL TRANSISTOR 188 Abstract: CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL187 CIL TRANSISTOR CIL 331 transistor a 92 a 331 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	PDF	C-120 CIL187 Rev060901 CIL TRANSISTOR 188 CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL TRANSISTOR CIL 331 transistor a 92 a 331
Untitled Abstract: No abstract text available Text: ST15043 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)40 Absolute Max. Power Diss. (W)187 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	ST15043 Freq10M
NTE192 Abstract: NTE192A PNP transistor 263 NTE193A NTE193 Text: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These	Original	PDF	NTE192 NTE193 NTE192A NTE193A /NTE193 /NTE193A O92HS 1000cps NTE192 NTE192A PNP transistor 263 NTE193A NTE193
2sd1187 Abstract: ed general semiconductor 4-00J1 Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ¿3.2 ±0.2 pi • Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2SD1187 2sd1187 ed general semiconductor 4-00J1
Transistors Abstract: NPN TRANSISTORS LIST pnp 115 ITT transistors Text: Page Contents 4 List of Types 5 to 17 Technical Information 19 to 65 Small-Signal Transistors NPN 67 to 113 Small-Signal Transistors (PNP) 115 to 157 DMOS Transistors (N-Channel) 159 to 187 DMOS Transistors (P-Channel) 189 to 193 Darlington Transistors 195 to 199	OCR Scan	PDF
2sd1187 Abstract: 2SD118 Text: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SW ITCHING APPLICATIONS DC-DC CONVERTER A N D DC-AC INVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ^3.2 ±0.2 Low Collector-Emitter Saturation Voltage : V qe sat = 0-5V	OCR Scan	PDF	2SD1187 2sd1187 2SD118
2Sd1187 Abstract: No abstract text available Text: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH PO W ER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .9 M A X . ' • Low Collector-Emitter Saturation Voltage : V ç e sat = 0.5V	OCR Scan	PDF	2SD1187 2Sd1187
2SD118 Abstract: 2SD1187 Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0	OCR Scan	PDF	2SD1187 2SD118 2SD1187
ac187 Abstract: Transistor AC 187 AC 187 npn transistor TO 1 ac188 valvo Transistor AC 188 AC 188 valvo transistoren valvo transistor valvo germanium Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, mit AC 188 als komplementäres Paar Mechanische Daten: Gehäuse: Metall, JEDEC TÜ-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehbluse isoliert. Farbpunkt: Kollektorseite	OCR Scan	PDF
Transistor AC 187 Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind	OCR Scan	PDF
TRANSISTOR BD 187 Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187 10 watt power transistor bd bD1894 motorola power transistor to-126 Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R »TJt.3 t.7 a S 4 96D 8 0 5 6 3 F D BD185 BD187 BD189 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC' M ED IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 10 W att audio amplifiers utilizing	OCR Scan	PDF
transistor tl 187 Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R ßF^t.3ti7as4 96D 8 0 5 6 3 F> D BD185 BD187 BD189 MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA PLASTIC M E D IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 1 0 W att audio amplifiers utilizing	OCR Scan	PDF

BD185 Abstract: BD189 2DIN125A din 125a 187BD BD188 c 36 to bd 25 m BD190 Text: w BD185 • BD187 - BD189 Silizium-NPN-Epibasis-Transistoren Silicon NPN Epibase Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Audio amplifier, driver and output stages Besondere Merkmale: Features: • Hohe Spitzenleistung	OCR Scan	PDF
boitier to 126 Abstract: l14oc BF 914 2n 693 2N706 ESM 470 Text: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §	OCR Scan	PDF	ESM753 l14oc boitier to 126 l14oc BF 914 2n 693 2N706 ESM 470
Nte187 Abstract: NTE38 nte193a Text: BI-POL AR TRANSISTORS Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) NTE Type Number Polarity and	OCR Scan	PDF	T0202 NTE193A) T092HS NTE192A) Nte187 NTE38 nte193a
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
187 npn transistor Abstract: No abstract text available Text: CHERRY SE MI CONDUCTOR CORP ÖS 2067S56 C H E R R Y S E M I C O N D U C T O R CO R P D e \| 2Gb755b OGGQilO 5 85D 00910 D T-42-21 LIN EAR BIPO LA R ARRAY iWÄiiiiil The Genesis 2000E and 2000EX are uncommitted arrays of transistors and resistors fabricated on a single monolithic	OCR Scan	PDF	20b7SSb T-42-21 2000E 2000EX 187 npn transistor
b 514 transistor Abstract: 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 2SC3906K TRANSISTOR 2SC transistor DJ marking 2SA1514K 2SA1579 Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package 2SC3906K (SMT3) package marking: 2SC3906K and 2SC4102; T * , where ★ is hFE code high breakdown voltage, Vqeo = 120 V complementary pair with 2SA1514K	OCR Scan	PDF	2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K b 514 transistor 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 TRANSISTOR 2SC transistor DJ marking 2SA1579
2n5551 Abstract: 2n5550 transistor 2n5551 2N5551 TO92 Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES 2N5550; 2N5551 PINNING • Low current max. 300 mA PIN • High voltage (max. 160 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • Switching and amplification in high voltage applications	OCR Scan	PDF	2N5400 2N5401. 2N5550; 2N5551 AM279 2N5550 2n5551 transistor 2n5551 2N5551 TO92
NPN POWER DARLINGTON TRANSISTORS Abstract: No abstract text available Text: H Z ! S C S -T H O M S O N ^7# BDX53F BDX54F îmei s llLI îi{s)i[]©i C O I^ E M E N T ^ Y S IU C O N POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL	OCR Scan	PDF	BDX53F BDX54F O-220 BDX54F. NPN POWER DARLINGTON TRANSISTORS
AC 187 npn transistor TO 1 Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K	OCR Scan	PDF	2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K AC 187 npn transistor TO 1 Transistor AC 188 transistor lt 186 Transistor AC 187
BD NPN transistors 177 Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42 Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15	OCR Scan	PDF	BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180

187 NPN TRANSISTOR Search Results

187 NPN TRANSISTOR Result Highlights (5)

187 NPN TRANSISTOR Datasheets Context Search

CIL TRANSISTOR 188

CIL TRANSISTOR 188

CIL TRANSISTOR 188

Untitled

NTE192

2sd1187

Transistors

2sd1187

2Sd1187

2SD118

ac187

Transistor AC 187

TRANSISTOR BD 187

transistor tl 187

BD185

boitier to 126

Nte187

bc 540

187 npn transistor

b 514 transistor

2n5551

NPN POWER DARLINGTON TRANSISTORS

AC 187 npn transistor TO 1

BD NPN transistors 177