Untitled
Abstract: No abstract text available
Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCD100N20
182mW
SC-63)
OT-428>
C10N20
R1102A
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Untitled
Abstract: No abstract text available
Text: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.
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RCD100N19
182mW
SC-63)
OT-428>
R1120A
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C10N19
Abstract: RCD-100
Text: RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.
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RCD100N19
182mW
SC-63)
OT-428>
C10N19
R1120A
RCD-100
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Untitled
Abstract: No abstract text available
Text: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES. PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 128K x 8 FLASH MFM8126 - 70/90/12 Issue 4.3 : April 2001 Features • Fast Access Time of 70 / 90 / 120ns. • Operating Power Read 182mW Max Program/Erase 305mW (Max)
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MFM8126
MIL-STD-883
128Kx
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C10N19
Abstract: RCD100N
Text: RCD100N19 RCD100N19 Datasheet Nch 190V 10A Power MOSFET lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.
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RCD100N19
182mW
SC-63)
OT-428>
C10N19
R1120A
RCD100N
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Untitled
Abstract: No abstract text available
Text: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCD100N20
182mW
SC-63)
OT-428>
C10N20
R1102A
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RCD100N19
Abstract: No abstract text available
Text: RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V RDS on (Max.) 182mW ID 10A PD CPT3 (SC-63) <SOT-428> (3) (2) (1) 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate (2) Drain (3) Source 2) Low on-resistance. 3) Fast switching speed.
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RCD100N19
182mW
SC-63)
OT-428>
R1120A
RCD100N19
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SOIC-16
Abstract: VDE0884 AMC1203 IEC60747-5-2 IEC61010-1
Text: AMC1203 www.ti.com SBAS427B – FEBRUARY 2008 – REVISED MAY 2010 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from
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AMC1203
SBAS427B
10MHz,
AMC1203
4000VPEAK.
16-Bit
AMC1203B)
280mV
SOIC-16
VDE0884
IEC60747-5-2
IEC61010-1
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Untitled
Abstract: No abstract text available
Text: AMC1203 SBAS427C – FEBRUARY 2008 – REVISED JUNE 2011 www.ti.com 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from
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AMC1203
SBAS427C
10MHz,
AMC1203
4000VPEAK.
16-Bit
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MD5 5vDC
Abstract: INS64 DMS-100 64 pin euro connectors Euro 64 MT128SMI isdn modem MT128SMI-L pinout rs232 to rj45 RS-232 wire
Text: SocketModem ISDN Embedded ISDN Modem Benefits • ISDN BRI modem with S/T interface • Quick time-to-market • Universal socket connectivity The SocketModem® ISDN embedded modem creates communication-ready devices by integrating BRI ISDN functionality and an S/T interface into a single, universal socket design. The space-efficient 1" x 2.5" modem
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DMS-100
MT128SMI
MT128SMI-L
64/128K
MD5 5vDC
INS64
64 pin euro connectors
Euro 64
MT128SMI
isdn modem
MT128SMI-L
pinout rs232 to rj45
RS-232 wire
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VHD200
Abstract: VHD144
Text: VHD200, VHD144 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: Nominal TCR: 0.6ppm/°C 0° to 60°C 2.0ppm/°C (– 55° to + 125°C) TCR Tracking: VHD200 to ± 0.1ppm/°C
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VHD200,
VHD144
VHD200
VHD144
10ppm)
50ppm)
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MAX3503
Abstract: MAX3503EGP
Text: 19-2339; Rev 1; 3/02 KIT ATION EVALU E L B A AVAIL Upstream CATV Amplifier ♦ Single 3.3V Supply Operation ♦ Accurate Gain Control, ±1dB over 53dB Range ♦ Gain Programmable in 0.5dB Steps ♦ -55dBc Harmonic Distortion at 65MHz ♦ Low Burst On/Off Transient
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-55dBc
65MHz
182mW
34dBmV
MAX3503EGP
MAX3503
MAX3503
MAX3503EGP
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5k0000
Abstract: VHD200
Text: VHD200, VHD144 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: Nominal TCR: 0.6ppm/°C 0° to 60°C 2.0ppm/°C (– 55° to + 125°C) TCR Tracking: VHD200 to ± 0.1ppm/°C
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VHD200,
VHD144
VHD200
VHD144
10ppm)
50ppm)
5k0000
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10K000
Abstract: 300144Z (Z-Foil)
Text: 300144Z, 300145Z Z-Foil Technology Vishay Foil Resistors Ultra High Precision Z-Foil Voltage Divider Resistors with TCR Tracking to 0.1 ppm/°C and Resistance Match to ± 0.005% (50 ppm) FEATURES P R O D U C T Any value at any tolerance available within resistance range
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300144Z,
300145Z
08-Apr-05
10K000
300144Z (Z-Foil)
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Untitled
Abstract: No abstract text available
Text: LTC2142-12/ LTC2141-12/LTC2140-12 12-Bit, 65Msps/ 40Msps/25Msps Low Power Dual ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n The LTC 2142-12/LTC2141-12/LTC2140-12 are 2-channel simultaneous sampling 12-bit A/D converters designed for digitizing high frequency, wide dynamic range signals.
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LTC2142-12/
LTC2141-12/LTC2140-12
12-Bit,
65Msps/
40Msps/25Msps
2142-12/LTC2141-12/LTC2140-12
12-bit
08psRMS
400MHz
800MHz
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10k000
Abstract: No abstract text available
Text: 300144, 300145 Vishay Foil Resistors Bulk Metal Foil Technology Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: See Figures 1 and 2 in data sheet “7 Technical Reasons to Specify Bulk Metal® Foil Resistor Networks.”
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10ppm)
19-Jul-02
10K000
10k000
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LDO sot23
Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver
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com/an1861
MAX1735:
AN1861,
APP1861,
Appnote1861,
LDO sot23
APP1861
CMPT2222A
MAX1735
MAX1735EUK25
RMC18-18RJB
transistor sot23-3
RMC181
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AMC1203
Abstract: IEC60747-5-2 IEC61010-1 VDE0884
Text: AMC1203 www.ti.com . SBAS427A – FEBRUARY 2008 – REVISED MARCH 2009 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator
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AMC1203
SBAS427A
10MHz,
AMC1203
4000VPEAK.
IEC60747-5-2
IEC61010-1
VDE0884
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Untitled
Abstract: No abstract text available
Text: AMC1203 www.ti.com SBAS427 – FEBRUARY 2008 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from
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AMC1203
SBAS427
10MHz,
AMC1203
4000VPEAK.
16-Bit
AMC1203B)
280mV
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AZ81CH24DA
Abstract: AZ8-1CH-24DEA az8 relay
Text: AZ8 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • • • Subminiature size High sensitivity, 110 mW pickup Coils to 48 VDC Hermetically sealed version available Epoxy sealed for automatic wave soldering Withstands 6 kV IEEE Lightning Surge special order
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E44211
AZ81CH24DA
AZ8-1CH-24DEA
az8 relay
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation
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IDT71V321S/L
IDT71V421S/L
25/35/55ns
T71V321L/ID
T71V421L
IDT71V321
16-or-m
IDT71V421
71V421
52-pin
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Intel 2118
Abstract: MB811B-10 DIP-16P-M01
Text: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage
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384-BIT
MB8118
M88118
16-pin
MB8118-10/MB8118-12
16-LEAD
IP-16C-C03
DIP-16P-M01
Intel 2118
MB811B-10
DIP-16P-M01
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5k0000
Abstract: 0I30
Text: DATA SHEET VPN-400 A Bulk MetaPFoil Ultra Precision Miniature Voltage Dividers TCR and Ratio Matched C O M P A N Y C F VISHAY FOIL RESISTORS ▼ Models: VHD200, VHD144, 300144, VSR144 High Level Performance Guaranteed Quality Temperature Coefficient of Resistance
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VPN-400
VHD200,
VHD144,
VSR144
VHD200:
VHD144:
VSR144:
5k0000
0I30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 4 S 7 2 C J - 1 0 ,- 1 2 ,- 1 5 301,989,888-B IT 4 ,194,304-W Q R D BY 72-B IT S ynchronous D YNAM IC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH4S72CJ is an 4M word by 72-bit Synchronous
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888-B
MH4S72CJ
72-bit
MH4S72CJ-10
888-BIT
304-WORD
72-BIT
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