Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    182 MARKING TRANSISTOR Search Results

    182 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    182 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR 182 transistor

    Abstract: BFR 67 Transistor BFR 67
    Text: BFR 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 182 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		PDF D-74025 BFR 182 transistor BFR 67 Transistor BFR 67

    BFR 182 transistor

    Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
    Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-23 Q62702-F1315 Sep-04-1996 BFR 182 transistor Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315

    Q62702-F1396

    Abstract: BF 182 transistor
    Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-143 Q62702-F1396 Dec-12-1996 Q62702-F1396 BF 182 transistor

    BF 182 transistor

    Abstract: BFR 182 transistor CI 182
    Text: BFR 182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF VPS05161 OT-23 00MHz Oct-13-1999 BF 182 transistor BFR 182 transistor CI 182

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    VPS05178

    Abstract: No abstract text available
    Text: BFP 182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178

    telefunken transistor

    Abstract: No abstract text available
    Text: BFP 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and high-gain broadband amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Low power applications


    Original     		PDF D-74025 telefunken transistor

    BFR 965

    Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
    Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705

    Q62702-F1318

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFP 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1318 OT-143 Q62702-F1318

    SMD Transistor 1020

    Abstract: marking l69 FMMTL619
    Text: Transistors IC SMD Type Medium Power Transistor FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF FMMTL619 OT-23 125mA* 200mA, 500mA, 100MHz SMD Transistor 1020 marking l69 FMMTL619

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    NPN planar RF transistor

    Abstract: CMPT5179
    Text: Central CMPT5179 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency


    Original     		PDF CMPT5179 CMPT5179 OT-23 100MHz 200MHz NPN planar RF transistor

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    BF 182 transistor

    Abstract: transistor 182 marking code M21
    Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-143 Q62702-F1396 BF 182 transistor transistor 182 marking code M21

    AYCE

    Abstract: TRANSISTOR S-93 BFR182T
    Text: SIEMENS BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f T = 8GHz F= 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-23 Q62702-F1315 BFR182 IS21I2 AYCE TRANSISTOR S-93 BFR182T

    BC 247

    Abstract: BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182
    Text: SIE D SIEMENS • fl2 3 SbüS GDM],S24 n i HSIEG S I E M EN S A K T I E N G E S E L L S C H A F NPN Silicon AF Transistors BC 182 BC 183 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 212, BC 213 PNP Type BC


    OCR Scan     		PDF fl23Sbà GDmS24 Q62702-C455 Q62702-C372 Q62702-C373 Q62702-C833 Q62702-C388 Q62702-C387 Q62702-C524 fl235bOS BC 247 BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182

    jc 817

    Abstract: pcb817 transistor jc 817 transistor cms 225 BFQ182 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817
    Text: SIEMENS BFQ 182 NPN Silicon RF Transistor Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • / r = 8 GHz F = 1.25 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF BFQ182 Q62702-F1355 023SbOS S235bD5 A23SbDS GGb7231 eht07760 jc 817 pcb817 transistor jc 817 transistor cms 225 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1 .2 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1315 OT-23 053SbDS BFR182 6235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5

    k22 sot23

    Abstract: semiconductor date Code smd-transistor
    Text: Labeling Specification LABEL SPECS 167 Labeling Specification Central Semiconductor Corp. www.centralsemi.com CENTRAL - ® - 1.0 Purpose: Sem iconductor Devices C M K T 2 2 2 2 A TR ITEM. SMD-TRANSISTOR D E S C R IP T IO N . ®"pr ~ Discrete CUSTOMER ITEM.


    OCR Scan     		PDF M96286 k22 sot23 semiconductor date Code smd-transistor

    Untitled

    Abstract: No abstract text available
    Text: Central CMPT5179 Sem iconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RFtransistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency


    OCR Scan     		PDF CMPT5179 CMPT5179 OT-23 10fiA 100MHz 200MHz

    Untitled

    Abstract: No abstract text available
    Text: Central CMPT5179 Sem i c o n d u c t o r C o r p . NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


    OCR Scan     		PDF CMPT5179 CMPT5179 OT-23 100MHz 200MHz 200MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 SILICON PNP EPITAXIAL TYPE TRANSISTOR Unit in mm LO W FREQUENCY PO W ER AMPLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • High DC Current Gain : hpg = 120~400 Low Saturation Voltage : VcE sat = —0.2V (Max.) (Ic = -400mA, Ig = —8mA)


    OCR Scan     		PDF 2SA1362 -400mA, --800mA --400mA, --10V,