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    1815 TRANSISTOR Search Results

    1815 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1815 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX9150

    Abstract: MAX9150EUI
    Text: 19-1815; Rev 0; 10/00 KIT ATION EVALU E L B AVAILA Low-Jitter, 10-Port LVDS Repeater The MAX9150 low-jitter, 10-port, low-voltage differential signaling LVDS repeater is designed for applications that require high-speed data or clock distribution while minimizing power, space, and noise. The device


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    PDF 10-Port MAX9150 10-port, 120ps MAX9150 MAX9150EUI

    Untitled

    Abstract: No abstract text available
    Text: 1768-1815 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF Freq30M

    Untitled

    Abstract: No abstract text available
    Text: 1763-1815 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF Freq30M

    DO326

    Abstract: No abstract text available
    Text: 19-1815; Rev 0; 10/00 KIT ATION EVALU E L B AVAILA Low-Jitter, 10-Port LVDS Repeater The MAX9150 low-jitter, 10-port, low-voltage differential signaling LVDS repeater is designed for applications that require high-speed data or clock distribution while minimizing power, space, and noise. The device


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    PDF 10-Port 120psp-p 100ps 400Mbps EIA/TIA-644 MAX9150 MAX9150 10-port, -100mV 100mV DO326

    1815 TRANSISTOR

    Abstract: transistor 1815 AN1815 APP1815 MAX1811
    Text: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: USB charger, Lithioum Ion charger, Li charger Dec 10, 2002 APPLICATION NOTE 1815 Add Current Boost to USB Charger Driven by an AC Adapter Abstract: A USB interface is capable of charging a portable device while transferring data. But for high-capacity


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    PDF 500mA. 100mA. com/an1815 MAX1811: AN1815, APP1815, Appnote1815, 1815 TRANSISTOR transistor 1815 AN1815 APP1815 MAX1811

    transistor 1815

    Abstract: H1815 NPN transistor 1815 2SC1815 1815 transistor 2SC1815H1815
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 1815 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:C035BJ-01 芯片厚度:240±20µm 管芯尺寸:350x350µm 2 焊位尺寸:B 极 12150µm 2,E 极 16180µm 2


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    PDF 100mm C035BJ-01 2SC1815H1815 400mW 150mA 60VIE 100mAIB transistor 1815 H1815 NPN transistor 1815 2SC1815 1815 transistor 2SC1815H1815

    Untitled

    Abstract: No abstract text available
    Text: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 Low power reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Four output configurations: – Push-pull, active-high STM1812,1817 – Push-pull, active-low (STM1810,1815)


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    PDF STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818

    id1146

    Abstract: marking code SS SOT23 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 STM1810
    Text: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 Low power reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Four output configurations: – Push-pull, active-high STM1812,1817 – Push-pull, active-low (STM1810,1815)


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    PDF STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 id1146 marking code SS SOT23 STM1813 STM1818

    18 SOT23-3

    Abstract: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 1815 TRANSISTOR
    Text: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 Low power reset circuit Features ● Precision monitoring of 3 V , 3.3 V, and 5 V supply voltages ● Four output configurations: – Push-Pull, Active-High STM1812,1817 – Push-Pull, Active-Low (STM1810,1815)


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    PDF STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 18 SOT23-3 STM1813 STM1818 1815 TRANSISTOR

    STM1810

    Abstract: STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 St*812
    Text: STM1810, STM1811, STM1812, STM1813 STM1815, STM1816, STM1817, STM1818 Low Power Reset Circuit FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PRECISION MONITORING OF 3V, 3.3V, AND 5V SUPPLY VOLTAGES FOUR OUTPUT CONFIGURATIONS – Push-Pull, Active-High STM1812,1817


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    PDF STM1810, STM1811, STM1812, STM1813 STM1815, STM1816, STM1817, STM1818 STM1812 STM1810 STM1811 STM1813 STM1815 STM1816 STM1817 STM1818 St*812

    marking code 10 sot23

    Abstract: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 1817 transistor
    Text: STM1810, STM1811, STM1812, STM1813 STM1815, STM1816, STM1817, STM1818 Low Power Reset Circuit PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PRECISION MONITORING OF 3V, 3.3V, AND 5V SUPPLY VOLTAGES FOUR OUTPUT CONFIGURATIONS


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    PDF STM1810, STM1811, STM1812, STM1813 STM1815, STM1816, STM1817, STM1818 STM1812 STM1810 marking code 10 sot23 STM1811 STM1813 STM1815 STM1816 STM1817 STM1818 1817 transistor

    transistor C 1815

    Abstract: TO-105 transistor 1817 transistor C 1815 transistor transistor 1815 STM1818 pf 1818 1815 TRANSISTOR STM1811 STM1815
    Text: STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 Low power reset circuit Features ● Precision monitoring of 3 V , 3.3 V, and 5 V supply voltages ● Four output configurations: – Push-Pull, Active-High STM1812,1817 – Push-Pull, Active-Low (STM1810,1815)


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    PDF STM1810 STM1811 STM1812 STM1813 STM1815 STM1816 STM1817 STM1818 transistor C 1815 TO-105 transistor 1817 transistor C 1815 transistor transistor 1815 STM1818 pf 1818 1815 TRANSISTOR

    745 transistor

    Abstract: TRANSISTOR C 1815 varistor 67 135 DIODE
    Text: СПЕЦИФИКАЦИЯ components Varistors Features • Small size, large peak current and high energy Insulated coating with epoxy yellow . Element diameter with 5,7, 10, 14, 20 mm. With safety approval UL1449 (E191293) Applications • Transistor, diode, IС, thyristor or tnac semiconductor protection


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    PDF UL1449 E191293) 745 transistor TRANSISTOR C 1815 varistor 67 135 DIODE

    14d 431K varistor

    Abstract: 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k
    Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V


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    PDF UL1414 E197475 UL1449 E326004 14d 431K varistor 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k

    Transistor GR 1815

    Abstract: C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815
    Text: M CC TO-92 Plastic-Encapsulate Transistors C 1815 TRANSISTOR NPN FEATURES a cp Power dissipation TO-92 0.4W (Tamb=25°C) Pcm ; Collector current 1.EMITTER Ic m ; 2.COLLECTOR 0.15A Collector-base voltage V (B R )C B O : 60 V 3 . BASE Operating and storage junction temperature range


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    PDF C1815 Transistor GR 1815 C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815

    2SC1815

    Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
    Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL


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    PDF 2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR

    2sc 1203

    Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
    Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240


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    PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23

    C1815 GR

    Abstract: c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h c1815 transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR
    Text: TO-92 Plastic-Encapsulate Transistors C 1815 TR A N SISTO R N PN F E A T U RES . Pow er dissipation TO-92 Pcm; (Tamb=25°C) C o llecto r current 1.EMITTER Icm: 2.COLLECTOR aSS 3 .BASE T 0 .4 W 0.15A C ollecto r-b ase voltage 60 V V(BR)CBO: O perating and storage ju n ctio n tem perature range


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    PDF C1815 C1815 GR c1815 transistor C1815 GR 7 J transistor C1815 c1815 gr h transistor C1815 y C1815 gr 8 C1815 y OF C1815 GR

    capacitor tnr 471

    Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


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    PDF 610mm capacitor tnr 471 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector

    21000sw

    Abstract: 2044B 2SB1215
    Text: Ordering num ber:EN2539B 2SB1215/2SD1815 No.2539B PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i High-Current Switching Applications A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current


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    PDF 2539B 2SB1215/2SD1815 2SB1215/2SD1815-applied 2SB1215 21000sw 2044B 2SB1215

    GR 1815

    Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
    Text: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT


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    PDF BF594 BF596 27min. BF597 37min. 2SC1815Y BC178B GR 1815 2SA950Y 1815gr 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y

    MC7805CK

    Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
    Text: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510


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    PDF LAS723A LAS723B LAS1100 LAS1405 LM123K LM223K LM323K SH0323 LAS1406 LAS1408 MC7805CK MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck

    cfy 14 siemens

    Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
    Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5


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    PDF fl23SbDS cfy 14 siemens CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23