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    Vishay Vitramon VJ1812Y224KXAAT

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    VJ1812Y224KXAAT00 - Tape and Reel (Alt: VJ1812Y224KXAAT)
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    1812Y224KXA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3

    MRF5S21130H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N

    MRF6S21140HSR3

    Abstract: J932
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140HR3 MRF6S21140HSR3 J932

    J949

    Abstract: rf t 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 J949 rf t 465B AN1955 MRF5S21130HSR3 MRF5S21130H

    J1103

    Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J1103 J294 MRF5S21150H MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966

    MRF5S21045N

    Abstract: No abstract text available
    Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    465B

    Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150R3 465B AN1955 MRF5S21150 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF

    A114

    Abstract: AN1955 JESD22 MRF6S21140HR3 MRF6S21140HSR3 465B
    Text: Freescale Semiconductor Technical Data MRF6S21140H/D Rev. 1, 11/2004 The RF MOSFET Line RF Power Field Effect Transistors MRF6S21140HR3 MRF6S21140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21140H/D MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HR3 A114 AN1955 JESD22 MRF6S21140HSR3 465B

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150HR3 MRF5S21150HSR3

    vishay mosfet MTBF

    Abstract: J29-4 465B AN1955 MRF5S21150 MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150R3 MRF5S21150SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3 vishay mosfet MTBF J29-4 465B AN1955 MRF5S21150 MRF5S21150HSR3

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    vishay mosfet MTBF

    Abstract: 465B AN1955 MRF5S21130 MRF5S21130R3 MRF5S21130SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21130R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130SR3


    Original     		PDF MRF5S21130/D MRF5S21130R3 MRF5S21130SR3 MRF5S21130R3 vishay mosfet MTBF 465B AN1955 MRF5S21130 MRF5S21130SR3

    j949

    Abstract: motorola 5420 J1175 J297 CAPACITOR chip mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line


    Original     		PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 j949 motorola 5420 J1175 J297 CAPACITOR chip mtbf

    MRF5S21130H

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 MRF5S21130SR3

    465B

    Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
    Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3

    MRF5S21130H

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21130H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21130HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110


    Original     		PDF MRF5S21130H/D MRF5S21130HR3 MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130H