1810CS01 Search Results

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl