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    180N10N Search Results

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    180N10N Price and Stock

    Infineon Technologies AG IPD180N10N3GATMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey IPD180N10N3GATMA1 Reel 5,000 2,500
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    Avnet Americas IPD180N10N3GATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD180N10N3GATMA1 13,808
    • 1 $0.71
    • 10 $0.644
    • 100 $0.518
    • 1000 $0.452
    • 10000 $0.451
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    Bristol Electronics IPD180N10N3GATMA1 324
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    Rochester Electronics IPD180N10N3GATMA1 1
    • 1 $0.5017
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    • 100 $0.4716
    • 1000 $0.4264
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    Chip1Stop IPD180N10N3GATMA1 Cut Tape 2,273
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    • 10 $0.869
    • 100 $0.58
    • 1000 $0.421
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    EBV Elektronik IPD180N10N3GATMA1 17 Weeks 2,500
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    Win Source Electronics IPD180N10N3GATMA1 23,700
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    • 100 $0.6683
    • 1000 $0.5174
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    Infineon Technologies AG IPP180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO220-3
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    DigiKey IPP180N10N3GXKSA1 Tube 292 1
    • 1 $1.88
    • 10 $1.88
    • 100 $1.88
    • 1000 $0.58524
    • 10000 $0.501
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    Avnet Americas IPP180N10N3GXKSA1 Tube 2,000 16 Weeks 1
    • 1 $0.39295
    • 10 $0.38744
    • 100 $0.37091
    • 1000 $0.37091
    • 10000 $0.37091
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    Mouser Electronics IPP180N10N3GXKSA1
    • 1 $1.31
    • 10 $0.669
    • 100 $0.613
    • 1000 $0.512
    • 10000 $0.501
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    Newark IPP180N10N3GXKSA1 Bulk 1,425 1
    • 1 $1.37
    • 10 $1.13
    • 100 $0.884
    • 1000 $0.609
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    Rochester Electronics IPP180N10N3GXKSA1 11,441 1
    • 1 $0.5567
    • 10 $0.5567
    • 100 $0.5233
    • 1000 $0.4732
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    TME IPP180N10N3GXKSA1 1
    • 1 $1.17
    • 10 $0.91
    • 100 $0.73
    • 1000 $0.69
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    Chip1Stop IPP180N10N3GXKSA1 Tube 693
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    • 10 $0.517
    • 100 $0.426
    • 1000 $0.397
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    EBV Elektronik IPP180N10N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPD180N10N3GBTMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey IPD180N10N3GBTMA1 Reel
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    IPD180N10N3GBTMA1 Cut Tape
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    IPD180N10N3GBTMA1 Digi-Reel
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    Avnet Americas IPD180N10N3GBTMA1 Reel 2,500
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    Infineon Technologies AG IPI180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO262-3
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    DigiKey IPI180N10N3GXKSA1 Tube 500
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    Rochester Electronics IPI180N10N3GXKSA1 500 1
    • 1 $0.7992
    • 10 $0.7992
    • 100 $0.7512
    • 1000 $0.6793
    • 10000 $0.6793
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    TME IPI180N10N3GXKSA1 478 1
    • 1 $1.27
    • 10 $1.1
    • 100 $0.88
    • 1000 $0.71
    • 10000 $0.71
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    Infineon Technologies AG IPA180N10N3GXKSA1

    MOSFET N-CH 100V 28A TO220-FP
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    DigiKey IPA180N10N3GXKSA1 Tube
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    Rochester Electronics IPA180N10N3GXKSA1 3,450 1
    • 1 $0.7236
    • 10 $0.7236
    • 100 $0.6802
    • 1000 $0.6151
    • 10000 $0.6151
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    180N10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    180N10N

    Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
    Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G

    180N10N

    Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
    Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10

    Untitled

    Abstract: No abstract text available
    Text: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 18 mW ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    PDF IPA180N10N3 PG-TO220-FP 180N10N

    DIODE D28

    Abstract: d28 diode 180n10n JESD22 DD-50 IPA180N10N3
    Text: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 18 mΩ ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPA180N10N3 PG-TO220-FP 180N10N DIODE D28 d28 diode 180n10n JESD22 DD-50

    180N10N

    Abstract: 180n10 JESD22 d33 marking
    Text: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPD180N10N3 O-263 PG-TO252-3 180N10N 180N10N 180n10 JESD22 d33 marking

    Untitled

    Abstract: No abstract text available
    Text: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max TO-263 18 mW ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPD180N10N3 O-263 IEC61249-2-21 PG-TO252-3 180N10N