Untitled
Abstract: No abstract text available
Text: 1714-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Untitled
Abstract: No abstract text available
Text: 1713-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Untitled
Abstract: No abstract text available
Text: 1718-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180 V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Untitled
Abstract: No abstract text available
Text: 1717-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Untitled
Abstract: No abstract text available
Text: 1711-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)190 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Untitled
Abstract: No abstract text available
Text: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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A580-1802
Freq250k
time10u
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Untitled
Abstract: No abstract text available
Text: 1716-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
req40M
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AD558
Abstract: AD558J AD558JN AD558JP AD558K interfacing of ad558 AD558KD
Text: AD558–SPECIFICATIONS @ T = +25؇C, V A Model AD558J Typ Min = +5 V to +15 V unless otherwise noted AD558K Typ Max Units 8 8 8 Bits RELATIVE ACCURACY 2 0°C to +70°C –55°C to +125°C ± 1/2 ± 1/4 ± 1/2 ± 3/4 ± 1/4 ± 3/8 LSB LSB 0 to +2.56 0 to +10
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AD558
AD558J
AD558K
AD558T1
AD558S1
AD558
C558f
AD558J
AD558JN
AD558JP
AD558K
interfacing of ad558
AD558KD
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AD558
Abstract: AD558J AD558JN AD558JP AD558K interfacing of ad558
Text: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V
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16-Pin
20-Pin
MIL-STD-883
AD558*
AD558
C558f
AD558
AD558J
AD558JN
AD558JP
AD558K
interfacing of ad558
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interfacing of ad558
Abstract: AD558KP cdp 1802
Text: BACK FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V
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16-Pin
20-Pin
MIL-STD-883
AD558*
AD558
AD558
interfacing of ad558
AD558KP
cdp 1802
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interfacing of ad558
Abstract: ad558jn ad558sd AD558 CDP-1802 AD558J AD558K AD558S
Text: FUNCTIONAL BLOCK DIAGRAM CONTROL INPUTS I2L CONTROL LOGIC LSB DB7 DB6 DB4 DB5 CE LSB DB3 CS DB1 GND DIGITAL INPUT DATA BUS DB2 FEATURES Complete 8-Bit DAC Voltage Output–2 Calibrated Ranges Internal Precision Bandgap Reference Single-Supply Operation: +5 V to +15 V
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16-Pin
20-Pin
MIL-STD-883
AD558*
AD558
C558f
AD558
interfacing of ad558
ad558jn
ad558sd
CDP-1802
AD558J
AD558K
AD558S
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage
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BD8966FVM
BD8966FVM
3000pcs
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Untitled
Abstract: No abstract text available
Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down High Efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage
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BD8966FVM
BD8966FVM
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Equivalence transistor
Abstract: FZ 76 capacitor BD8966FVM BD9106FVM CMD6D11B MCR10 VLF5014AT-4R7M1R1 rohm MCR10
Text: TECHNICAL NOTE Single-chip Type with Built-in FET Switching Regulator Series Low Noise Step-down Switching Regulator BD8966FVM ●Description ROHM’s high efficiency step-down switching regulator BD8966FVM is a power supply designed to produce a low voltage
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BD8966FVM
BD8966FVM
Equivalence transistor
FZ 76 capacitor
BD9106FVM
CMD6D11B
MCR10
VLF5014AT-4R7M1R1
rohm MCR10
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bta 05
Abstract: BTA05
Text: SIEMENS NPN Silicon AF Transistors SMBTA 05 SMBTA 06 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 55 SMBTA 56 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 05
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Q68000-A3430
Q68000-A3428
OT-23
EHP00816
bta 05
BTA05
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2SA1802
Abstract: 2SC4681
Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)
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2SC4681
2SA1802
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BD 61 9 40
Abstract: No abstract text available
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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23StQS
617itter
BD615
Q0Q43
TcaMS25'
BD 61 9 40
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b0615
Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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--25C
BD618,
Q62702-D946
Q62702-D948
Q62702-D950
Q62702-D952
Q62702-D954
611/BD
613/BD
S250C
b0615
b0613
bo 615
8 HJC
bd 426
BD 615 transistors
q62702
BD PNP
siemens 611
b0617
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s
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Q62702-F1681
OT-323
0122E04
900MHz
D1525D5
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DLS-4201
Abstract: fpm 250 airflow Warren GV 250fpm fp-m alarm DLS4203
Text: THE NEW WARREN G-V "THERMUUOOR" SWITCH MONITORS FORCED AIR COOLING SYSTEMS WITH TWO LOGIC OUTPUTS _ * 6ENL SIG/ilARREN G-V S3E 1 • 3=11=1802 0 0 0 0 8 3 3 1T7 H i III AR D L S S e r ie s only from WARREN G-V -r- DESCRIPTION Warren G-V’s new thermal emulator, or
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Untitled
Abstract: No abstract text available
Text: DACPORT Low Cost, Complete ixP-Compatible 8-Bit DAC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output - 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: 1ms Voltage Settling to ±1/2LSB
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AD558
16-Pin
20-Pin
MIL-STD-883
AD558
200ns/DIV
500ns/DtV
100ns/DIV
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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gto Gate Drive circuit
Abstract: TIP 133c transistor GTO SCR SCR GTO die N648 GTO MOTOROLA 12n06
Text: EB108 Prepared by Al Pshaenich Power Products Applications RELATIVE EFFICIEN CIES OF MOTOROLA POWER SEMICONDUCTORS IN A PWM DC MOTOR CONTROLLER INTRODUCTION The prime requisite of a power switch, semiconductor or otherwise, is to transfer the maximum power to the
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EB108
EB108/D
gto Gate Drive circuit
TIP 133c
transistor GTO SCR
SCR GTO die
N648
GTO MOTOROLA
12n06
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interfacing of ad558
Abstract: AD558KD
Text: DACPORT Low Cost, Complete M-P-Compatible 8-Bit DflC AD558 ANALOG DEVICES □ FEATURES Complete 8-Bit DAC Voltage Output — 2 Calibrated Ranges Internal Precision Band-Gap Reference Single-Supply Operation: +5V to +15V Full Microprocessor Interface Fast: Iju Voltage Settling to ±1/2LSB
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AD558
16-Pin
20-Pin
MIL-STD-883
AD558
AD558--
200ns/DIV
interfacing of ad558
AD558KD
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