Untitled
Abstract: No abstract text available
Text: 19-1506; Rev 0; 7/99 GSM900/DCS1800/PCS1900 Triple-Band, Low-Noise Amplifiers Features ♦ Wide Operating Frequency Range 800MHz to 1000MHz MAX2651 1800MHz to 2000MHz (MAX2651/MAX2653) ♦ Excellent Low-Noise Performance 1.2dB over GSM Receive Band (MAX2651)
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GSM900/DCS1800/PCS1900
MAX2651/MAX2653
GSM900,
DCS1800,
PCS1900
MAX2651
GSM900
DCS1800/PCS1900
MAX2653
DCS1800
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Regulated linear Power Supply Schematic Diagram
Abstract: 3v Regulated Power Supply Schematic Diagram schematic diagram 50 VDC POWER SUPPLY schematic diagram 32 VDC POWER SUPPLY RF3120 1800mhz transistor 4C201
Text: RF3120 Preliminary 2 3V 1800MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems POWER AMPLIFIERS 2 Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is
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RF3120
1800MHZ
RF3120
1750MHz
1780MHz
Regulated linear Power Supply Schematic Diagram
3v Regulated Power Supply Schematic Diagram
schematic diagram 50 VDC POWER SUPPLY
schematic diagram 32 VDC POWER SUPPLY
1800mhz transistor
4C201
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Untitled
Abstract: No abstract text available
Text: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain High Power Added Efficiency Patent Pending Power Sense Technology 1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications PCS Communication Systems
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RF2163
RF21633
30dBm
1800MHz
2500MHz
Log10
DS110615
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PDF
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SMD Transistor Y34
Abstract: Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34
Text: Transistors IC SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High speed,high voltage switching. High ft:fT=1800MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01
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2SA1462
OT-23
1800MHz
-10mA
SMD Transistor Y34
Y33 SMD TRANSISTOR
SMD Transistor Y33
marking Y33
pnp smd y34
smd marking y33
2SA1462
marking y34
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AMX2022
Abstract: MAX2022 MAX2022ETX MAX2022ETX-T MAX5875 MAX5895
Text: 19-3572; Rev 0; 4/05 ILABLE N KIT AVA IO T A U L A EV High-Dynamic-Range, Direct Upconversion 1500MHz to 2500MHz Quadrature Modulator The MAX2022 low-noise, high-linearity, direct upconversion quadrature modulator is designed for single and multicarrier 1800MHz to 2200MHz UMTS/WCDMA,
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1500MHz
2500MHz
MAX2022
1800MHz
2200MHz
cdma2000®
AMX2022
MAX2022ETX
MAX2022ETX-T
MAX5875
MAX5895
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transistor 2.4GHz amplifier schematic wifi
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power High Linearity VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM
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RF5117
16-Pin,
30dBm
1800MHz
2800MHz
17dBm
IEEE802
RF5117
2002/95/EC
transistor 2.4GHz amplifier schematic wifi
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Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power High Linearity VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC
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RF5117
16-Pin,
30dBm
1800MHz
2800MHz
17dBm
IEEE802
RF5117
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power High Linearity VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC
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RF5117
16-Pin,
30dBm
1800MHz
2800MHz
17dBm
IEEE802
RF5117
23dBm)
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3120 3V 1800MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems U F pg O ra R de d N P E ro W du ct D R ES F3 10 IG 0- N 3K S Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is
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RF3120
1800MHZ
RF3120
1750MHz
1780MHz
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54MBPS
Abstract: RF5117 RF5117PCK-410
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power High Linearity VCC VCC 14 13 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC 5 6
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RF5117
1800MHz
2800MHz
17dBm
30dBm
16-Pin,
IEEE802
RF5117
2002/95/EC
54MBPS
RF5117PCK-410
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ph43
Abstract: CMDA2000 MWS11-PH43-CS PH41 MWS11-PH41-CS
Text: MWS11-PH4x-CS W-CDMA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY KEY FEATURES DESCRIPTION and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package
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MWS11-PH4x-CS
1800MHz
2000MHz
16-pin
27dBm
CMDA2000
ApWS11-PH4x-CS
ph43
CMDA2000
MWS11-PH43-CS
PH41
MWS11-PH41-CS
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PDF
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Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER 26dB Small Signal Gain High Linearity 1800MHz to 2800MHz Frequency Range VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 +17dBm PO, 11G, <3% EVM 9 NC
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RF5117
30dBm
16-Pin,
1800MHz
2800MHz
17dBm
IEEE802
DS110617
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PDF
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PH41
Abstract: ph43 MWS11-PH43-CS CMDA2000 MWS11-PH41-CS 2000 W POWER AMPLIFIER cmda200 DSA00369659.txt
Text: MWS11-PHxx-CS W-CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package CSP with external input/output match
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MWS11-PHxx-CS
1800MHz
2000MHz
16-pin
27dBm
CMDA2000
10-50mF
10mil
40mil
100pF
PH41
ph43
MWS11-PH43-CS
CMDA2000
MWS11-PH41-CS
2000 W POWER AMPLIFIER
cmda200
DSA00369659.txt
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Untitled
Abstract: No abstract text available
Text: MWS11-PH41-CS W-CMDA Power Amplifier A M I C R O S E M I C O M P A N Y P RELIMINARY and other linear applications in the 1800MHz to 2000MHz band. There are two 16-pin package versions for this Power Amplifier. One is a 3mm x 3mm chip scale package CSP with external input/output match
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MWS11-PH41-CS
CDMA2000,
1800MHz
2000MHz
16-pin
27dBm
10-50mF
10mil
40mil
100pF
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AN1352
Abstract: START420 Transistor W03
Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1352
START420
23dBm,
SC-70
OT-343)
30mils
AN1352
Transistor W03
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Transistor W03
Abstract: AN1352 START420
Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1352
START420
23dBm,
SC-70
OT-343)
30mils
Transistor W03
AN1352
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PDF
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transistor 1800MHz
Abstract: r.f. amplifier 30mhz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
r.f. amplifier 30mhz
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rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
ERJ-3GEYJ821
ERJ-3GEYJ391
transistor 1800MHz
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404j
Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
404j
transistor 1800MHz
100A0R9BT150X
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Transistor W03
Abstract: 1800mhz rf frequency power amplifier circuit AN1352 START420 w03 TRANSISTOR
Text: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, NF = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
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AN1352
START420
23dBm,
SC-70
OT-343)
30mils
Transistor W03
1800mhz rf frequency power amplifier circuit
AN1352
w03 TRANSISTOR
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EC 401 TRANSISTOR
Abstract: Gan hemt transistor RFMD transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
EC 401 TRANSISTOR
Gan hemt transistor RFMD
transistor 1800MHz
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SG911A
Abstract: TO-129 c 129 transistor
Text: GAE GREAT AMERICAN ELECTROINCS SG911A Silicon NPN power UHF transistor SG911A is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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SG911A
SG911A
1000-1800Mhz
O-129
TO-129
c 129 transistor
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"Frequency Multipliers"
Abstract: SG911B TO-129 SG911
Text: GAE GREAT AMERICAN ELECTROINCS SG911B Silicon NPN power UHF transistor SG911B is designed for amplifier, frequency multipliers, and auto-oscillators applications in the 1000-1800Mhz frequency range. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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SG911B
SG911B
1000-1800Mhz
O-129
0D0004M
"Frequency Multipliers"
TO-129
SG911
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transistor 1800MHz
Abstract: No abstract text available
Text: SONY PRELIMINARY DATA SHEET Dual-Band 3 Volt Power Amplifier for GSM900/1800 Applications CXG1047FN - Dual Band The CXG1047 Dual Band GaAs PA is a 3 Stage Power Amplifier that may be used for both GSM900 and GSM1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier
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GSM900/1800
CXG1047FN
CXG1047
GSM900
GSM1800
CXG1047D21
transistor 1800MHz
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