L9D3256M32SBG1
Abstract: No abstract text available
Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES Configuration: x/ '06%* 0HJ[[ 8 banks x/ '06%* 0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999
|
Original
|
L9D3256M32SBG1
L9D3512M32SBG1
256-512M
DDR3-1333
LDS-L9D3xxxM32SBG1
L9D3256M32SBG2I107
L9D3256M32SBG1
|
PDF
|
TA 7698 AP
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:
|
Original
|
L9D3256M32SBG1
L9D3512M32SBG1
256-512M
F5478O54UDI3<
54Ogi
F5734O54UDI3<
86Ogi
3057X
/202897X1-203X
TA 7698 AP
|
PDF
|
MAX9967
Abstract: No abstract text available
Text: 19-3389; Rev 0; 8/04 KIT ATION EVALU LE B A IL A AV Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load The MAX9969 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
MAX9969
MAX9969
MAX9967
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-0242; Rev 0; 6/05 KIT ATION EVALU E L B A AVAIL Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load Features The MAX9975 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
1800Mbps
MAX9975AR)
MAX9975AZ)
MAX9975
MAX9975
MAX9975ARC
|
PDF
|
hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
|
PDF
|
amcc volta
Abstract: No abstract text available
Text: S4814PBI21 Volta 48 FINAL Datasheet Revision 1.13 November 21, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth
|
Original
|
S4814PBI21
amcc volta
|
PDF
|
MAX9967
Abstract: No abstract text available
Text: 19-3389; Rev 0; 8/04 Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load The MAX9969 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
MAX9969
MAX9969
MAX9967
|
PDF
|
HY5RS573225AFP-14
Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS573225AFP
8Mx32)
500/600MHz
HY5RS573225AFP-14
11mmx14mm
HY5RS573225AFP-16
136ball
HY5RS573225AFP
HY5RS573225AFP-12
hynix gddr3
hy5rs573225afp-11
|
PDF
|
136ball
Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS573225AFP
8Mx32)
500/600MHz
136ball
HY5RS573225AFP2
HY5RS573225AFP
samsung k9 derating
HY5RS573225AFP-11
|
PDF
|
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
|
Original
|
GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
|
PDF
|
K4W1G1646E
Abstract: K4W1G1646E-HC11
Text: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4W1G1646E
K4W1G1646E
K4W1G1646E-HC11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-3389; Rev 0; 8/04 Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load The MAX9969 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
MAX9969
MAX9969
|
PDF
|
K4W1G1646D-EC15
Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
|
Original
|
K4W1G1646D
K4W1G1646D-EC15
K4W1G1646D-EJ11
K4W1G1646D-EC
gDDR3-1800
DDR3 DIMM 240 pinout
GDDR3 SDRAM 256Mb
JESD51-2
VIH150
SAMSUNG GDDR3
K4W1G1646D
|
PDF
|
ELPIDA DDR User
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS573225AFP
8Mx32)
HY5RS573225AFP
500/600MHz
3XOOHG/RZWR9664
ELPIDA DDR User
|
PDF
|
|
|
S19225PBI22
Abstract: S19225PBI AMCC Virtual Concatenation deskew SRAM SAMSUNG
Text: S19225PBI22 Volta 192 Datasheet Revision 1.14 February 23, 2006 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth
|
Original
|
S19225PBI22
S19225PBI
AMCC Virtual Concatenation deskew
SRAM SAMSUNG
|
PDF
|
hynix gddr3
Abstract: 136ball HY5RS573225AFP HY5RS573225AFP2 HY5RS573225AFP-14 AP 4750 HY5RS573225A
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS573225AFP
8Mx32)
HY5RS573225
hynix gddr3
136ball
HY5RS573225AFP
HY5RS573225AFP2
HY5RS573225AFP-14
AP 4750
HY5RS573225A
|
PDF
|
HY5RS123235
Abstract: CLAMSHELL HYNIX and zq A2K1 136ball GDDR3 SDRAM 256Mb HY5RS123235FP nanya ba1g
Text: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS123235FP
16Mx32)
Page15)
Page47)
Table18
Page48)
Table19
Page50)
HY5RS123235
CLAMSHELL
HYNIX and zq
A2K1
136ball
GDDR3 SDRAM 256Mb
HY5RS123235FP
nanya
ba1g
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-0242; Rev 0; 6/05 KIT ATION EVALU E L B A AVAIL Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load Features The MAX9975 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
1800Mbps
MAX9975AR)
MAX9975AZ)
MAX9975
MAX9975
MAX9975ARCCQ
MAX9975ARCCQ-TD
|
PDF
|
5V 3 pin RELAY
Abstract: max9977akccq
Text: 19-0383; Rev 0; 7/05 Quad, Low-Power, 1200Mbps ATE Driver The MAX9977 quad, low-power, high-speed, pin-electronics driver includes, for each channel, a three-level pin driver. The driver features a wide voltage range and high-speed operation, includes high-impedance and
|
Original
|
1200Mbps
MAX9977
MAX9977AD
MAX9977AKCCQ
MAX9977AKCCQ-TD
14x14x1
1-0148A
C100E
5V 3 pin RELAY
|
PDF
|
SLA 7041
Abstract: amcc volta SLA 7041 ms MT46V16M16-6T AMCC Virtual Concatenation deskew 4XP4 xxaa9 S19225PBI21
Text: S19225PBI21 FINAL Volta192 Datasheet Revision 1.13 November 9, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth
|
Original
|
S19225PBI21
Volta192
SLA 7041
amcc volta
SLA 7041 ms
MT46V16M16-6T
AMCC Virtual Concatenation deskew
4XP4
xxaa9
|
PDF
|
K4W1G1646E-HC12
Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
|
Original
|
K4W1G1646E
K4W1G1646E-HC12
K4W1G1646E
samsung K4W1G1646E-HC11
K4W1G1646E-HC11
gddr3
1066MB
gDDR3-1333
K4W1G1646E-HC1A
DDR3 DIMM 240 pinout
gDDR3-2000
|
PDF
|
NCMP
Abstract: Q12M ADTV
Text: 19-5232; Rev 3; 6/11 Quad Driver with Integrated Level Setters Features The MAX19001 fully integrated, quad-channel, highperformance pin-electronics driver with built-in level setters is ideal for memory and SOC ATE systems. Each MAX19001 channel includes a four-level pin driver, programmable cable-loss compensation, built-in programmable level setters, and a comparator that is useful for
|
Original
|
MAX19001
1200Mbps
NCMP
Q12M
ADTV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
HY5RS573225AFP
8Mx32)
500/600MHz
|
PDF
|
MA4853
Abstract: MAX5631 MAX5734
Text: 19-0242; Rev 0; 6/05 Dual, Low-Power, 1200Mbps ATE Driver/Comparator with 35mA Load Features The MAX9975 dual, low-power, high-speed, pin electronics driver/comparator with 35mA load IC includes, for each channel, a three-level pin driver, a dual comparator, variable clamps, and an active load. An additional differential comparator allows comparisons
|
Original
|
1200Mbps
MAX9975
MAX9975
MA4853
MAX5631
MAX5734
|
PDF
|