Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    17N5000 Search Results

    17N5000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ws dvd 290

    Abstract: ws dvd 290* transistor
    Text: VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Ω Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		17N5200 5SYA1036-03 17N5000 17N4600 17Woff 18Woff CH-5600 ws dvd 290 ws dvd 290* transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VSM = 5200 ITAVM = 1700 ITRMS = 2670 ITSM = 29000 VT0 = 1.02 rT = 0.320 Bi-Directional Control Thyristor V A A A V mΩ 5STB 17N5200 Doc. No. 5SYA 1036-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology


    Original     		17N5200 17N5200 17N5000 17N4600 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications


    Original     		17N5200 5SYA1036-03 17N5200 17N5000 17N4600 CH-5600 PDF