Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC503QBG1-15H-MT A 17May04 Description: 15 Degree 5mm Round LED Lamp in Bluish Green Color with Water Transparent Lens and No Stopper *This specification is only for Marktech Dice Material: InGaN Confirmed
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LC503QBG1-15H-MT
17May04
18inch2)
ECN-H20040120
COTCO-D-074
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Marking Code JB
Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Text: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky
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Si5855DC
Si5853DC
Si5855DC-T1
Si5855DC-T1--E3
08-Apr-05
Marking Code JB
SI5855DC-T1-E3
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s40501
Abstract: S-40501
Text: Tape Information Vishay Siliconix 1206-8 ChipFETR O1.5 + 0.1/−0.0 B B 4.0 See Note 1 A 2.0 " 0.05 See Note 4 1.75 3.5 " 0.05 See Note 4 8.0 " 0.3 4.0 Section A-A O1.0 min A Section B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm. 2. Camber not to exceed 1 mm in 100 mm.
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S-40501--Rev.
17-May-04
93-2346-X
13-JMay-04
s40501
S-40501
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93-5227-1
Abstract: 71938 MLP33-6 40510 VISHAY MLP33
Text: Tape Information Vishay Siliconix MLP33-6, 8, and 10 PowerPAKr MLP33-6, 8 and 10 4.00 " 0.10 A SEE NOTE 1 1.75 " 0.0 ∅1.5 + 0.1/−0.0 2.0 " 0.05 3.50 " 0.05 SEE NOTE 4 8.00 0.30/−0.10 SEE NOTE 4 B0 R0.3 MAX ∅1.0 MIN A 4.00 " 0.10 NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.
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MLP33-6,
S-40510--Rev.
17-May-04
12-May-04
93-5227-1
71938
MLP33-6
40510
VISHAY MLP33
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Untitled
Abstract: No abstract text available
Text: TEMT3700 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. Due to its waterclear epoxy lens the device is sensitive to visible
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TEMT3700
TEMT3700
TSMS3700
D-74025
17-May-04
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CQC03001004372
Abstract: CQC04001009253 CSA-C22 E109565 E112471 EN132400 mkp 1.27 mkp x2 300 v CQC04001009254 MKP 12
Text: MKP 336 2 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type APPLICATIONS 168x12 halfpage w l X2 class REFERENCE STANDARDS “IEC 60384-14 2nd edition and EN 132400” “IEC 60065, pass. flamm. class B” 250 V: CSA-C22.2 No 1; UL1414
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168x12
CSA-C22
UL1414
UL1283
UL1414
E112471
E109565
CQC03001004372
CQC04001009253
E109565
E112471
EN132400
mkp 1.27
mkp x2 300 v
CQC04001009254
MKP 12
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mosfet marking jb
Abstract: Marking Code JB
Text: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky
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Si5855DC
Si5853DC
Si5855DC-T1
Si5855DC-T1--E3
S-40932--Rev.
17-May-04
mosfet marking jb
Marking Code JB
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Untitled
Abstract: No abstract text available
Text: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)
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Si5853DC
Si5853DC-T1
Si5853DC-T1--E3
S-40932--Rev.
17-May-04
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marking 1821
Abstract: No abstract text available
Text: Si91821 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag FEATURES D Input Voltage: 2.35−6.0 V D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.775-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Low 120-mV Dropout at 300-mA Load
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Si91821
300-mA
120-mV
500-mA
100-mV
S-40943
marking 1821
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Untitled
Abstract: No abstract text available
Text: Si91821 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag FEATURES D Input Voltage: 2.35−6.0 V D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.775-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Low 120-mV Dropout at 300-mA Load
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Si91821
300-mA
120-mV
500-mA
100-mV
S-40943
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DG3535
Abstract: No abstract text available
Text: DG3535/DG3536 Vishay Siliconix New Product 0.25-W Low-Voltage Dual SPDT Analog Switch FEATURES D D D D D BENEFITS Low Voltage Operation Low On-Resistance - rON: 0.25 W @ 2.7 V −69 dB OIRR @ 2.7 V, 100 kHz MICRO FOOTr Package ESD Protection >2000 V D D D
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DG3535/DG3536
DG3535/DG3536
S-40863--Rev.
17-May-04
DG3535
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h2 marking
Abstract: H1 MARKING CODE VISHAY .H2 MARKING
Text: BCW69 / BCW70 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • • • • PNP Silicon Epitaxial Planar Transistors Suited for low level, general purpose applications. Low current, low voltage. As complementary types, BCW71 and BCW72
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BCW69
BCW70
BCW71
BCW72
OT-23
BCW70
BCW69-GS18
BCW69-GS08
BCW70-GS18
h2 marking
H1 MARKING CODE VISHAY
.H2 MARKING
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BZX584C10-02V
Abstract: BZX58 bzx584c3v002v BZX584C5V1-02V BZX584C2V4-02V BZX584C3V3-02V BZX584C6V2-02V bzx584c15 BZX584C
Text: BZX584C-02V Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • With the BZX584C.-02V series vishay offers a Z-Diode in the tiny SOD-523 plastic package. Made for space sensitive applications the BZX584C.-02V series has a zener voltage tolerance of ± 5 %. Other voltage tolerances are available on request.
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BZX584C-02V
BZX584C.
OD-523
D-74025
17-May-04
BZX584C10-02V
BZX58
bzx584c3v002v
BZX584C5V1-02V
BZX584C2V4-02V
BZX584C3V3-02V
BZX584C6V2-02V
bzx584c15
BZX584C
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S-40501
Abstract: 71221
Text: Tape Information Vishay Siliconix TSSOP: 8 LEAD 16 MM See Note 1 4.0 B B O1.5 +0.1 −0.0 A E F See Note 4 See Note 4 2.0"0.1 W O1.5 min A Section A-A Section B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm. 2. Camber not to exceed 1 mm in 100 mm.
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S-40501--Rev.
17-May-04
90-2345-x
13-May-04
S-40501
71221
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Si4874DY
Abstract: No abstract text available
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS
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Si4874DY
18-Jul-08
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93-5216-1
Abstract: 71242 40728
Text: Tape Information Vishay Siliconix MSOP: 8-LEADS 4.0"0.1 Typ See Note 1 2.00"0.05 Typ See Note 4 +0.1 O1.5 −0.0 Typ 1.75"0.1 A 5.5"0.05 See Note 4 12.0"0.3 R0.5 Min 8.0 O1.5 Min Section A−A A NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2.
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S-40728--Rev.
17-May-04
13-May-04
93-5216-1
71242
40728
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SI4433DY-T1
Abstract: Si4433DY
Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested
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Si4433DY
Si4433DY---E3
Si4433DYT1
Si4433DY-T1--E3
18-Jul-08
SI4433DY-T1
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Si4884DY
Abstract: No abstract text available
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS
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Si4884DY
17-May-04
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Untitled
Abstract: No abstract text available
Text: Si9174 Vishay Siliconix High Performance Step-Down DC-DC Converter With Dynamically Adjustable Output Voltage D Synchronizable to13-MHz Clock D User Selectable PWM, PSM, or AUTO Mode D PSM Frequency w20 kHz for Inaudible Harmonics FEATURES D D D D D D D D
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Si9174
600-mA
10-Pin
MLP33
to13-MHz
S-40941--Rev.
17-May-04
17-May-04
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SUD50N04
Abstract: No abstract text available
Text: SUD50N04-06H New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.006 @ VGS = 10 V ID D TrenchFETr Power MOSFETS D 175_C Junction Temperature (A)c APPLICATIONS 109 D Automotive Such As: − High-Side Switch
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SUD50N04-06H
O-252
SUD50N04-06H--E3
S-40933--Rev.
17-May-04
SUD50N04
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Untitled
Abstract: No abstract text available
Text: Si91822 Vishay Siliconix Micropower 300-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES Low 150-mV Dropout at 300-mA Load Guaranteed 300-mA Output Current 600-mA Peak Output Current Capability Uses Low ESR Ceramic Output Capacitor Fast Load and Line Transient Response
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Si91822
300-mA
150-mV
600-mA
100-mV
01-mF
S-40945--Rev.
17-May-04
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Si4894DY
Abstract: No abstract text available
Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4894DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application
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Si4894DY
18-Jul-08
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BA20-BA31
Abstract: AT75C AT75C221 PA11 PA12 PA19 atmel ice
Text: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz Operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • – Up to 60 MHz Operations – 104K bytes of Integrated Fast RAM, Codec Interface
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16-bit
16-Kbyte
6033D
14-Sep-05
BA20-BA31
AT75C
AT75C221
PA11
PA12
PA19
atmel ice
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 —»— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS LTR D DESCRIPTION DATE REV PER OS14 - 0 2 2 8 - 0 4 OWN APVD KW KW 17MAY04 D D C 1363106 .100 [2 .54 ]
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17MAY04
QQ-B-626
C17300,
31MAR2000
24MAY02
ASTM-B488
Y2002
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