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Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 1975 A 3100 A 29000 A 1.02 V 0.320 mΩ Ω Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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17H5200
5SYA1049-02
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17H5000
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 1975 A 3100 A 29000 A 1.02 V 0.32 mΩ Ω Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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17H5200
5SYA1049-02
17H5200
17H5000
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CH-5600
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29000A
Abstract: No abstract text available
Text: VDSM = 5200 V ITAVM = 1975 A ITRMS = 3100 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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5SYA1049-02
17H5200
17H5200
17H5000
17H4600
67xVDRM
CH-5600
29000A
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5STP17H5200
Abstract: No abstract text available
Text: Key Parameters VDSM = 5200 ITAVM = 1975 ITRMS = 3100 ITSM = 29000 VT0 = 1.02 rT = 0.320 V A A A V mΩ Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA 1049-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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Original
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17H5200
17H5200
17H5000
17H4600
67xVDRM
CH-5600
5STP17H5200
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