Si4420DY
Abstract: No abstract text available
Text: Si4420DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4420DY
S-49457--Rev.
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4425DY
S-49458--Rev.
17-Dec-96
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Si4425DY
Abstract: No abstract text available
Text: Si4425DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4425DY
S-49458--Rev.
17-Dec-96
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Si6925DQ
Abstract: No abstract text available
Text: Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6925DQ G1 G2 Top View
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Si6925DQ
Junct25
S-49455--Rev.
17-Dec-96
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Si6925DQ
Abstract: No abstract text available
Text: Si6925DQ Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6925DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2 N-Channel MOSFET
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Si6925DQ
S-49455--Rev.
17-Dec-96
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Si6926DQ
Abstract: No abstract text available
Text: Si6926DQ Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.035 @ VGS = 4.5 V "4.0 0.040 @ VGS = 3.0 V "3.7 0.045 @ VGS = 2.5 V "3.5 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6926DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View S1 S2
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Si6926DQ
S-49456--Rev.
17-Dec-96
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Si6926DQ
Abstract: No abstract text available
Text: Si6926DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.035 @ VGS = 4.5 V "4.0 0.040 @ VGS = 3.0 V "3.7 0.045 @ VGS = 2.5 V "3.5 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6926DQ G1 G2 Top View
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Si6926DQ
08-Apr-05
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Si6926DQ
Abstract: No abstract text available
Text: Si6926DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.035 @ VGS = 4.5 V "4.0 0.040 @ VGS = 3.0 V "3.7 0.045 @ VGS = 2.5 V "3.5 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6926DQ G1 G2 Top View
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Si6926DQ
S-49456--Rev.
17-Dec-96
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Si4480DY
Abstract: No abstract text available
Text: Si4480DY N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.0 0.040 @ VGS = 6.0 V "5.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4480DY
S-49459--Rev.
17-Dec-96
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mosfet 4800
Abstract: Si4425DY S4945
Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4425DY
S-49458--Rev.
17-Dec-96
mosfet 4800
S4945
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telefunken schematic diagram
Abstract: 10613 U4791B
Text: U4791B Automotive Lamp Outage Monitor, VT = 53 mV Description The monolithic integrated bipolar circuit, U4791B, is designed as a monitor for lamp failure in automobiles. The comparator threshold is matched to the PTC characteristic of incandescent lamps. The threshold is
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U4791B
U4791B,
D-74025
17-Dec-96
telefunken schematic diagram
10613
U4791B
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Untitled
Abstract: No abstract text available
Text: Si6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "3.4 0.06 @ VGS = 3.0 V "3.1 0.08 @ VGS = 2.5 V "2.7 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6925DQ G1 G2 Top View
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Si6925DQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6926DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.035 @ VGS = 4.5 V "4.0 0.040 @ VGS = 3.0 V "3.7 0.045 @ VGS = 2.5 V "3.5 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6926DQ G1 G2 Top View
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Si6926DQ
S-49456--Rev.
17-Dec-96
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Telefunken Electronic
Abstract: U4790B
Text: U4790B Automotive Lamp Outage Monitor, VT = 8 mV, VZ 3,5 = 22 V Description The IC U4790B in bipolar technology, is designed as a monitor for lamp failure in automobiles. The comparator threshold is matched to the PTC characteristic of incandescent lamps. The threshold is tied to a typical
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U4790B
U4790B
D-74025
17-Dec-96
Telefunken Electronic
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6926DQ Se mi c ond uc t or s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 fDSion) (&) I d (A) 0.035 @ VGS = 4.5 V ±4.0 0.040 @ VGS = 3.0 V ±3.7 0.045 @ VGS = 2.5 V ±3.5 iJS-V « ä<e4 Dl O 2 d o TSSOP-8 G2 Gi Top View N-Channel M OSFET
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6926DQ
S-49456--Rev.
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel MOSFET PARAMETER SYMBOL N-Channel MO SFET
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6925DQ
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4425DY S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) I d (A) rDS(on) (£2) 30 0.014 VGS = -10 V ±11 0.023 @ VGS = -4.5 V ±8.5 iisr f t 1 ' Po * e m SO-8 ns rm Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4425DY
S-49458--Rev.
17-Dec-96
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2050002
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. AA FRONT REVISIONS DIST 22 LTR SHIELD DESCRIPTION DATE RLSD, NPR C96-245 070CT96 DUN APVD TCS cw •88. 9 4 [3.50] REAR SHIELD MATERIAL^
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C96-245
070CT96
27jim
03pmH
070CT9Ã
17DEC9Ã
09MAY94
2S-JAN-97
2050002
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A) rDS(on) ( ^ ) 80 0.035 @ VGS = 10 V ±6.0 0.040 @ VGs = 6.0 V ±5.5 p o '« 8 ' SO-8 s s S G IX IX IX H~ XI ZJ XI XI Top View N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4480DY
S-49459--Rev.
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6925DQ S e m i c o n d u c t o r s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary Vd s (V) 20 rDS(on) ( S ) I d (A) 0.05 @ VGS = 4.5 V ± 3 .4 0.06 @ VGS = 3.0 V ± 3.1 0.08 @ VGS = 2.5 V ± 2 .7 O D-> O Ô Sj S2 N-Channel MOSFET N-Channel MOSFET
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6925DQ
S-49455--
I7-Dec-96
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A ) I*DS(on) ( ß ) 0.035 @ V qS = 10 V ± 6.0 0.040 @ VGS = 6.0 V ± 5.5 80 ,0 * ' SO -8 It . 0 -'I- Top View N-Channe! M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4480DY
S-49459--Rev.
J7-Dec-96
17-Dec-96
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L50C
Abstract: No abstract text available
Text: Tem ic SÌ6926DQ Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) I d (A) ± 4.0 ±3.7 ±3.5 rDS(on) (Q ) 0.035 @ VGS = 4.5 V 0.040 @ VGS = 3.0 V 0.045 @ VGS = 2.5 V 20 2 .5 ^ TSSOP-8 G2 Top View -to Si Ò Ô S2 N-Channel MOSFET
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6926DQ
S-49456--Rev.
17-Dec-96
L50C
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Temic Semiconductors
Abstract: U4790B
Text: Tem ic U4790B S e m i c o n d u c t o r s Automotive Lamp Outage Monitor, V j = 8 mV, Vz 3,5 = 22 V Description The IC U4790B in bipolar technology, is designed as a monitor for lamp failure in automobiles. The comparator threshold is matched to the PTC characteristic of
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u4790b
U4790B
D-74025
17-Dec-96
Temic Semiconductors
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CK408
Abstract: CK-408
Text: SÌ4425DY Vishay Siticonix P-Channel 30-V D-S MOSFET Vo»|Vi nDS(ON) (Q) iD (A) 0.014 @ V G S = - 1 0 V ±11 0.023 @ V Gg = - 4 .5 V ± 8.5 -3 0 S S S W $0-8 H! rm Top V iew D O D D P -C h a n n e i M O S F E T ABSO LU TE M A X IM U M R A T I N G S I T fi
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4425DY
S-49458--
ec-96
CK408
CK-408
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