Untitled
Abstract: No abstract text available
Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF644B/IRFS644B
O-220
FP001
O-220F
IRFS644B
FP001
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4TD245
Abstract: FXL4TD245BQX
Text: FXL4TD245 tm Low Voltage Dual Supply 4-Bit Signal Translator with Configurable Voltage Supplies and Signal Levels and 3-STATE Outputs and Independent Direction Controls Features General Description • Bi-directional interface between any 2 levels The FXL4TD245 is a configurable 4-bit dual-voltagesupply translator designed for both uni-directional and
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FXL4TD245
FXL4TD245
DQFN-16
FXL4TD245BQX
4TD245
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10n20c
Abstract: 10n20
Text: TM FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB10N20C/FQI10N20C
FQB10N20C
FQB10N20CTM
10n20c
10n20
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Y2010DN
Abstract: y2010d y2010 diode y2010dn switched mode power supply *2010dn
Text: FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes TO-220 1 2 3 1. Anode 2.Cathode 3. Anode
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FYP2010DN
O-220
FYP2010DN
O-220-3
FYP2010DNTU
Y2010DN
y2010d
y2010
diode y2010dn
switched mode power supply
*2010dn
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6n40c
Abstract: 6N40
Text: TM FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB6N40C/FQI6N40C
FQI6N40C
O-262
FQI6N40CTU
6n40c
6N40
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Untitled
Abstract: No abstract text available
Text: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB15P12
FQI15P12
-120V,
FQB15P12TM
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32N12
Abstract: No abstract text available
Text: FQB32N12V2/FQI32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB32N12V2/FQI32N12V2
FQB32N12V2
FQB32N12V2TM
32N12
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Untitled
Abstract: No abstract text available
Text: FFA60UP20DN Features • Ultrafast with soft recovery @ IF = 1A , < 40ns • Reverse Voltage, 200V • Forward Voltage (@ TC = 100°C), < 1V TO-3P Applications • • • • 1 2 3 Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply
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FFA60UP20DN
FFA60UP20DN
FFA60UP20DNTU
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"induction cooker" circuit
Abstract: induction cooker application notes FGL60N100BNTD fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component
Text: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
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FGL60N100BNTD
O-264
FGL60N100BNTD
O-264-3
FGL60N100BNTDTU
"induction cooker" circuit
induction cooker application notes
fairchild induction cooker
induction cooker circuit with IGBT
IGBT FGL60N100BNTD
igbt induction cooker
induction cooker circuit
induction heating cooker
induction cooker use on component
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2701 optocoupler
Abstract: optocoupler 2701 FODM2701 FODM121R1 DSA0023712 FODM121BR2
Text: FODM121 Series, FODM124, FODM2701 Series, FODM2705 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Features Applications • >5mm creepage/clearance ■ Compact 4-pin surface mount package ■ Digital logic inputs ■ ■ ■ ■ ■ Microprocessor inputs
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FODM121
FODM124,
FODM2701
FODM2705
FODM121:
FODM2701:
2701 optocoupler
optocoupler 2701
FODM121R1
DSA0023712
FODM121BR2
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Untitled
Abstract: No abstract text available
Text: IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRFW610B
IRFI610B
W610B
O-263
IRFW610BTM
FP001
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optocouplers 501 IC
Abstract: TIL113 CNX48U
Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current
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CNX48U,
H11BX,
MOC8080
TIL113
CNX48U
H11B1
TIL113
H11B2
H11B255
optocouplers 501 IC
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18N20
Abstract: FQD18N20V2
Text: TM FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD18N20V2
FQU18N20V2
O-252
FQD18N20V2TF
FQD18N20V2TM
18N20
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KA7805ETU
Abstract: KA7805AE KA7809AE KA7805ERTM KA7915E KA7805E
Text: KA78XXE/KA78XXAE 3-Terminal 1A Positive Voltage Regulator Features Description • Output Current up to 1A The KA78XXE/KA78XXAE series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs
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KA78XXE/KA78XXAE
O-220/D-PAK
KA7805E
KA7805ERTF
KA7805ERTM
KA7805ETSTU
KA7805ETU
KA7805AE
KA7809AE
KA7915E
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Untitled
Abstract: No abstract text available
Text: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRFR220B
IRFU220B
O-251
IRFU220B
IRFU220BTU
FP001
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10n20c
Abstract: 10n20
Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD10N20C
FQU10N20C
swi000
FQD10N20CTF
FQD10N20CTM
10n20c
10n20
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Rail-to-Rail Amplifiers
Abstract: FHP3232
Text: FHP3132, FHP3232 Single and Dual, High-Speed, Rail-to-Rail Amplifiers Features at ±5V Description • 2.5mA supply current per amplifier The FHP3132 single and FHP3232 (dual) are low-cost, high-performance, voltage feedback amplifiers that consume only 2.5mA of supply current per channel, while providing
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FHP3132,
FHP3232
260MHz
00V/s
100mA
17nV/Hz
100dB
FHP3132
Rail-to-Rail Amplifiers
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r18120g2
Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Text: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family
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ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
ISL9R18120G2,
ISL9R18120S3S
r18120g2
R18120S3
R18120P
R18120P2
igbt 6.5 kv snubber
R18120G
ISL9R18120S3ST
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120N30
Abstract: No abstract text available
Text: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where
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FGPF120N30
FGPF120N30
O-220F
FGPF120N30TU
120N30
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5n50c
Abstract: FQPF*5n50c 5n50
Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP5N50C/FQPF5N50C
FQPF5N50C
FQPF5N50CT
FQPF5N50CYDTU
5n50c
FQPF*5n50c
5n50
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17n40
Abstract: 17N40T 17n4 fqpf
Text: QFET ! "
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FQPF17N40
FQPF17N40T
17n40
17N40T
17n4
fqpf
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FOD250L
Abstract: No abstract text available
Text: FOD050L, FOD250L: Single Channel FOD053L: Dual Channel LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers Features Description • Low power consumption The FOD250L, FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are specified for operation at a 3.3V supply voltage.
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FOD050L,
FOD250L,
FOD053L
FOD250L:
FOD053L:
FOD250L)
FOD050L
FOD250L
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plasma tv schematic diagram
Abstract: FOD3181 FOD3180 sustain driver for plasma tv
Text: FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Features Description • Guaranteed operating temperature range of -20°C to The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide AlGaAs light emitting diode
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FOD3181
E90700,
FOD3181S
FOD3181SD
FOD3181SDV
FOD3181SV
plasma tv schematic diagram
FOD3180
sustain driver for plasma tv
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R3305 transistor
Abstract: R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FJN3303
Text: FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted
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FJN3303
FJN3303
FJN3303BU
FJN3303TA
R3305 transistor
R3305
NPN transistor Electronic ballast to92
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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