BFR90A
Abstract: No abstract text available
Text: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50
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BFR90A
BFR90A
D-74025
17-Apr-96
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BF996S
Abstract: GPS25 829 Tetrode
Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D High cross modulation performance D Low input capacitance D High AGC-range
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BF996S
BF996S
30the
D-74025
17-Apr-96
GPS25
829 Tetrode
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BFP92A
Abstract: No abstract text available
Text: BFP92A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
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BFP92A
D-74025
17-Apr-96
BFP92A
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telefunken
Abstract: BFP181T
Text: BFP181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain
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BFP181T
D-74025
17-Apr-96
telefunken
BFP181T
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BFR90 application
Abstract: BFR90 transistor BFR90 BFR90 amplifier
Text: BFR90 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90 Marking: BFR90 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base
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BFR90
BFR90
D-74025
17-Apr-96
BFR90 application
BFR90 transistor
BFR90 amplifier
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BFR183T
Abstract: Telefunken
Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain
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BFR183T
D-74025
17-Apr-96
BFR183T
Telefunken
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BFP280T
Abstract: No abstract text available
Text: BFP280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure
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BFP280T
D-74025
17-Apr-96
BFP280T
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BFP183T
Abstract: marking 83 Telefunken
Text: BFP183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low power applications D Low noise figure
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BFP183T
D-74025
17-Apr-96
BFP183T
marking 83
Telefunken
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BFP182T
Abstract: marking 82
Text: BFP182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure
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BFP182T
D-74025
17-Apr-96
BFP182T
marking 82
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BFP67
Abstract: BFP67R
Text: BFP67/BFP67R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFP67/BFP67R
BFP67
BFP67R
D-74025
17-Apr-96
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BFR96
Abstract: BFR96T
Text: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50
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BFR96T
BFR96T
D-74025
17-Apr-96
BFR96
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BFQ 540 application
Abstract: BFQ65 BFQ 540
Text: BFQ65 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence
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BFQ65
D-74025
17-Apr-96
BFQ 540 application
BFQ65
BFQ 540
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09 66 563 681
Abstract: silicon npn planar rf transistor sot 143 BFS17A ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17AR
Text: BFS17A/BFS17AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain D Small collector capacitance
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BFS17A/BFS17AR
BFS17A
BFS17AR
D-74025
17-Apr-96
09 66 563 681
silicon npn planar rf transistor sot 143
ic 565 features
RF NPN POWER TRANSISTOR 3 GHZ
420 NPN Silicon RF Transistor
marking E5
RF NPN POWER TRANSISTOR 2.5 GHZ
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BFR181T
Abstract: Telefunken
Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain
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BFR181T
D-74025
17-Apr-96
BFR181T
Telefunken
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BFW92
Abstract: telefunken telefunken IC
Text: BFW92 Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 1 BFW92 Marking: BFW92 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage
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BFW92
BFW92
D-74025
17-Apr-96
telefunken
telefunken IC
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BFR92A
Abstract: sot-23 transistor p2 marking BFR92AR
Text: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking: + P2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BFR92A/BFR92AR
BFR92A
BFR92AR
D-74025
17-Apr-96
sot-23 transistor p2 marking
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BFR92R
Abstract: BFR92 transistor bfr92
Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23
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BFR92/BFR92R
BFR92
BFR92R
D-74025
17-Apr-96
transistor bfr92
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BFP93A
Abstract: No abstract text available
Text: BFP93A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 3 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
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BFP93A
D-74025
17-Apr-96
BFP93A
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BFQ67
Abstract: temic 0675
Text: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFQ67
D-74025
17-Apr-96
BFQ67
temic 0675
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Untitled
Abstract: No abstract text available
Text: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features
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BFR182T
17-Apr-96
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Untitled
Abstract: No abstract text available
Text: •miS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — .— LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 LTR T DESCRIPTION REVISED PER DATE 0A40-0173-05 OWN 06APR05 APVD JWD JD D D L 0.20 + 0.05-0.00 [7.87+2.00-0.0]
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0A40-0173-05
06APR05
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NPN planar RF transistor
Abstract: No abstract text available
Text: Tem ic BFP280T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Jk For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features • Low power applications
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BFP280T
1S21e
17-Apr-96
NPN planar RF transistor
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F394
Abstract: No abstract text available
Text: THIS DRAWING 15 UNPUBUSHED. COPYRIGHT 19 RELEASED FDR PUBLICATION BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 LTR DESCRIPTION DATE REV PER 0 A 0 0 - 0 1 6 3 - 0 0 1. -0 .1 5 ± 0 .0 3 D IM E N S IO N S IN [ ] ARE IN 01MAR00 APVD
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01MAR00
r3937
ri96S
17APR96
23APR96
23APR9B
23FEB95
22FEB00
F394
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Untitled
Abstract: No abstract text available
Text: Temic BFP181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features
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BFP181T
pr-96
17-Apr-96
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