Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
|
Original
|
PDF
|
Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
MOSFET TSSOP-8
Abstract: SI6410DQ
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
|
Original
|
PDF
|
Si6410DQ
Si6410DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MOSFET TSSOP-8
|
Untitled
Abstract: No abstract text available
Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1
|
Original
|
PDF
|
Si6955ADQ
Si6955ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT
|
Original
|
PDF
|
Si6969BDQ
Si6969BDQ-T1
Si6969BDQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
si6465
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
|
Original
|
PDF
|
Si6465DQ
Si6465DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si6465
|
Untitled
Abstract: No abstract text available
Text: Si6973DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.8 0.039 at VGS = - 2.5 V - 4.2 0.055 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
|
Original
|
PDF
|
Si6973DQ
Si6973DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
|
Original
|
PDF
|
Si6926ADQ
Si6926ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2
|
Original
|
PDF
|
Si6963BDQ
Si6963BDQ-T1-GE3
70emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8
|
Original
|
PDF
|
Si6415DQ
Si6415DQ-T1
Si6415DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS
|
Original
|
PDF
|
Si6981DQ
Si6981DQ-T1-GE3
11-Mar-11
|
SI6410DQ
Abstract: No abstract text available
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
|
Original
|
PDF
|
Si6410DQ
Si6410DQ-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2
|
Original
|
PDF
|
Si6963BDQ
Si6963BDQ-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise: @ 10kHz offset:
|
Original
|
PDF
|
10kHz
CVCO55CL-0393-0428
17-Dec-03
|
Untitled
Abstract: No abstract text available
Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
|
Original
|
PDF
|
BAR63V-04W
OT-323
BAR63V-04W
D-74025
17-Dec-03
|
|
|
Untitled
Abstract: No abstract text available
Text: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS
|
Original
|
PDF
|
Si6404DQ
Si6404DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si6459BDQ Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si6459BDQ
2002/95/EC
Si6459BDQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
|
Original
|
PDF
|
Si6926ADQ
Si6926ADQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT
|
Original
|
PDF
|
Si6969BDQ
Si6969BDQ-T1
Si6969BDQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch
|
Original
|
PDF
|
Si6993DQ
Si6993DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 LTR DESCRIPTION M REVISED DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 APVD JR MJS 1 3 . 0 8 ± 0 - 1 3 DIA
|
OCR Scan
|
PDF
|
17DEC03
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 LTR DESCRIPTION REVISED DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 1 3 . 0 8 ± 0 - 1 3 DIA [ . 5 1 5 ±-0 0 5 ]
|
OCR Scan
|
PDF
|
17DEC03
LR7189
E13288
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DI ST G REVISIONS 14 P LTR DESCRIPTION G1 DATE CRRECTED SPELLING EROR DWN APVD JR TM 17DEC03 D D Æ ^ l IE ^ WIRE RANGE 1/ 0 /ijgjfc
|
OCR Scan
|
PDF
|
17DEC03
LR7189
|
Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT —»— RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. G REVISIONS DIST 14 LTR DESCRIPTION OWN DATE REVISED PER 0G 3A - 07 99- 03 APVD JR MJS 17DEC03 D D / íg p r j L is te d
|
OCR Scan
|
PDF
|
17DEC03
LR7189
B-152,
B-545
31MAR2000
3-117mm
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC G ALL RIGHTS RESERVED. 6 .7 3 ± 0 - 1 3 DIST 1 4 R E V IS IO N S LTR DESCRIPTION REVISED DIA DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 APVD JR MJS
|
OCR Scan
|
PDF
|
17DEC03
iO-20
E13288
|