VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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"ETA 30"
Abstract: RA30H1317M RA30H1317M-01 RA30H1317M-E01 50w rf power transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
"ETA 30"
RA30H1317M-01
RA30H1317M-E01
50w rf power transistor
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RA30H1317M
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
beco1-55685-739
I-20041
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RA30H1317M
Abstract: RA30H1317M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
RA30H1317M-01
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RA30H1317M
Abstract: RA30H1317M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
24Jan
RA30H1317M-101
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amp circuit diagrams 300w
Abstract: RF MOSFET MODULE RA30H1317M RA30H1317M-101 GP 140
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
amp circuit diagrams 300w
RF MOSFET MODULE
RA30H1317M-101
GP 140
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D1260UK
Abstract: No abstract text available
Text: TetraFET D1260UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1260UK
175MHz
D1260UK
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D1260UK
Abstract: No abstract text available
Text: TetraFET D1260UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1260UK
175MHz
D1260UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1260UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 175MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS
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D1260UK
175MHz
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
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transistor W66
Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)
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RD35HUF2
175MHz,
530MHz,
RD35HUF2
43Wtyp,
530MHz
45Wtyp,
175MHz
Oct2011
transistor W66
w18 transistor
TRANSISTOR ML1
transistor w18 57 small
W08 transistor
transistor w08
405MHz
mitsubishi L200
transistor marking w08
TRANSISTOR w18
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mitsubishi L200
Abstract: c14 fet
Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)
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RD35HUF2
175MHz,
530MHz,
43Wtyp,
530MHz
45Wtyp,
175MHz
mitsubishi L200
c14 fet
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transistor D 1666
Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
transistor D 1666
MITSUBISHI RF POWER MOS FET
RD30HVF1-101
mos 1718
transistor A 564
rf power transistor rd30hvf1
A 1469 mosfet
transistor D 1762
1633 MOSFET
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177J
Abstract: MOS 3020 RD35HUF2 w18 transistor
Text: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON
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RD35HUF2
175MHz,
530MHz,
RD35HUF2
43Wtyp,
530MHz
45Wtyp,
175MHz
177J
MOS 3020
w18 transistor
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A 1469 mosfet
Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
A 1469 mosfet
transistor 38W
1599 transistor
100OHM
MITSUBISHI RF POWER MOS FET
TRANSISTOR D 1785
transistor D 1666
transistor 38W 3 pin
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MITSUBISHI RF POWER MOS FET
Abstract: 071J
Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
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RD30HVF1
175MHz
RD30HVF1
RD30HVF1-101
Oct2011
MITSUBISHI RF POWER MOS FET
071J
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RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
175MHz
RD30HVF1
175MHz
RD30HVF1-101
100OHM
RD30HVF1-101
rd30hvf
A 1469 mosfet
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212J
Abstract: rd30hvf
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD30HVF1
RD30HVF1
175MHz
RD30HVF1-101
212J
rd30hvf
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE ^24^02^ 0G174b3 S1D • M67781H 150-175MHZ, 12.5V, 40W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM —II" —II- [^b>—II—® P IN : ® P in : RF INPUT V C C I : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ®PO
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0G174b3
M67781H
150-175MHZ,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67781H 150-175MHz, 12.5V, 40W, FM MOBILE RADIO PIN : P in = RF IN PU T DVCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®Po : RF O U TPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25 Vcci VCC2 Icc Pin(max Po{max) TC(OP)
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M67781H
150-175MHz,
CTc-25
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67781H 150-175MHz, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : P in : RF IN PU T VCC1 : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY ®PO : RF O U TPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted
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M67781H
150-175MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67781H 150-175MHz, 12.5V, 40W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66 ± 1 60 ±1 03 R 2 ± 0.5 CD <D <3> <D 0.5 + 0.15 o o + I 12 ± 1 10.5+1 27 ± 1 4.5 ± 1 PIN : Pin : RF INPUT VCCI : 1st. DC SUPPLY
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M67781H
150-175MHz,
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M67781H
Abstract: 150-175MHZ 25X1
Text: MITSUBISHI RF POWER MODULE M67781H 150-175MHz, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm GHH- — II — PIN : © P in : RF INPUT VCC1 : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted
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M67781H
150-175MHz,
M67781H
150-175MHZ
25X1
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M67781H
Abstract: 175mhz 12.5v 40w M67781 25X1
Text: MITSUBISHI RF POWER MODULE M67781H 150-175MHz, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm — II— GHH- PIN : © P in : RF IN P U T V C C 1 : 1st. DC S U P P L Y ® V C C 2 : 2 nd. DC S U P P L Y ®PO : RF O U T P U T
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M67781H
150-175MHz,
175MHz
M67781H
175mhz 12.5v 40w
M67781
25X1
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