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    1718G Search Results

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    1718G Price and Stock

    PEI Genesis M10-123017-18G

    MIL LJT 07 18 HEX NUT 023
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    DigiKey M10-123017-18G Bulk 51 1
    • 1 $9.64
    • 10 $8.35
    • 100 $5.78
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    Amphenol PCD ELFB1718G

    5MM/.197" MALE HDR, VERT BOARD-M
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    DigiKey ELFB1718G Bulk 100
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    Interstate Connecting Components ELFB1718G
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    Amphenol PCD ELFH1718G

    5MM/.197" VERT HDR CLOSED ENDS H
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    DigiKey ELFH1718G Bulk 100
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    Interstate Connecting Components ELFH1718G
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    JRH Electronics MS3417-18G

    CONNECTOR ACCESSORIES
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    DigiKey MS3417-18G Bulk 1
    • 1 $204.26
    • 10 $114.292
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    Fischer Elektronik GmbH & Co KG MK-217-18-G

    FOR 0.5 MM
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    DigiKey MK-217-18-G Bulk 10
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    • 10 $3.93
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    Find more 1718G price and stock on Findchips.com

    1718G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    17-18g

    Abstract: 1718G NJD1718
    Text: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original     		PDF NJD1718T4G NJD1718/D 17-18g 1718G NJD1718

    17-18g

    Abstract: No abstract text available
    Text: JXWBLB-T-BP-13000-2000-9CSMF 13GHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-13000-2000-9CSMF 1 JXWBLB-T-BP-13000-2000-9CSMF 13GHz Cavity Band Pass Filter Technical Specification Center Frequency[f0] GHz 13 1dB Bandwidth(GHz)


    Original     		PDF JXWBLB-T-BP-13000-2000-9CSMF 13GHz VSWR/50Ohms 17-18GHz T-BP-13000-2000-9CSMF 17-18g

    Untitled

    Abstract: No abstract text available
    Text: NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • • • • • Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in


    Original     		PDF NJD1718, NJVNJD1718 NJD1718/D

    17-18g

    Abstract: 8144 10A1 10B1 CHA3513 617G
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original     		PDF CHA3513 6-18GHz CHA3513 DSCHA3513-8144 17-18g 8144 10A1 10B1 617G

    17-18G

    Abstract: 1718g
    Text: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original     		PDF NJD1718T4G NJD1718/D 17-18G 1718g

    17-18g

    Abstract: 1718G
    Text: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original     		PDF NJD1718T4G NJD1718/D 17-18g 1718G

    10A1

    Abstract: 10B1 CHA3513
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original     		PDF CHA3513 6-18GHz CHA3513 DSCHA3513-8144 10A1 10B1

    17-18G

    Abstract: No abstract text available
    Text: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • • • • Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in


    Original     		PDF NJD1718T4G NJD1718/D 17-18G

    17-18g

    Abstract: CHA3513 8144 10A1 10B1
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original     		PDF CHA3513 6-18GHz CHA3513 DSCHA3513-8144 17-18g 8144 10A1 10B1

    Untitled

    Abstract: No abstract text available
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original     		PDF CHA3513 6-18GHz CHA3513 DSCHA3513-8144