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    16MBIT Search Results

    16MBIT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AT25FF161A-SSHN-B Renesas Electronics Corporation 16Mbit, 1.65 V to 3.6 V SPI Serial Flash Memory with Multi-I/O Support Visit Renesas Electronics Corporation
    AT25SF161B-MHB-T Renesas Electronics Corporation 16Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF161B-UUB-T Renesas Electronics Corporation 16Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT45DB161E-MHF-T Renesas Electronics Corporation 16Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB161E-SSHD-T Renesas Electronics Corporation 16Mbit, 2.3V to 3.6V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    RMLV1616AGBG-5U2#AC0 Renesas Electronics Corporation 16Mbit LPSRAM (1M word × 16bit / 2M word x 8bit) Visit Renesas Electronics Corporation

    16MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MR27V1652D

    Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
    Text: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8


    Original     		PDF MR27V1652D 576-Word 16-Bit 152-Word 16-Word MR27V1652D 16Mbit 16bit DIP42-P-600-2 MR27V1652DMA MR27V1652DRA

    MSM27V1655CZ

    Abstract: No abstract text available
    Text: ¡ Semiconductor 1A MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM DESCRIPTION The MSM27V1655CZ is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its


    Original     		PDF MSM27V1655CZ 288-Double 32-Bit 576-Word 16-Bit 16-Bit MSM27V1655CZ 16Mbit 32bit

    LHF00L31

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LHF00L31 Flash Memory 16Mbit 1Mbitx16 (Model Number: LHF00L31) Spec. Issue Date: May 25, 2004 Spec No: FM045026 LHF00L31 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LHF00L31 16Mbit 1Mbitx16) LHF00L31) FM045026 LHF00L31

    UT9Q512K32

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a


    Original     		PDF UT9Q512K32E 68-lead UT9Q512K32

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs


    Original     		PDF UT9Q512K32E 50krads 68-lead

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs


    Original     		PDF UT9Q512K32E 50krads 68-lead

    1MX16

    Abstract: CCIR601 CCIR656 PBGA388
    Text: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE


    Original     		PDF 64-BIT 66MHz 16Mbit 1MX16) 16-BIT 1MX16 CCIR601 CCIR656 PBGA388

    MR27V1602D

    Abstract: DIP42-P-600-2 MR27V1602DMA MR27V1602DRA
    Text: ¡ Semiconductor 1A MR27V1602D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM DESCRIPTION The MR27V1602D is a 16Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27


    Original     		PDF MR27V1602D 576-Word 16-Bit 152-Word MR27V1602D 16Mbit 16bit V1602D MR27V1602 DIP42-P-600-2 MR27V1602DMA MR27V1602DRA

    JED-STD-020

    Abstract: No abstract text available
    Text: 512K x 32 SRAM MEMORY PUMA 68SV16000B-020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 2.0 : May 2001 Description Features The PUMA 68SV16000B/AB is a 16Mbit CMOS High • Very Fast Access Times of 20, 25, 35 ns.


    Original     		PDF 68SV16000B-020/025/35 68SV16000B/AB 16Mbit JED-STD-020. 200pcs 183OC 225OC 219OC JED-STD-020

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time


    Original     		PDF 0316409C 0316169C 0316809C 1Mx16 16Mbit -12ns 545-DRAM;

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page


    Original     		PDF 0316409C 0316169C 0316809C 1Mx16 16Mbit SM2402T-6 SM2403T-6 SM2404T-6 SM2402T-7 SM2403T-7

    Untitled

    Abstract: No abstract text available
    Text: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)


    Original     		PDF V58C2512 16Mbit 32Mbit DDR500 DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1G01 32Mbit 16Mbit DDR2-667 DDR2-800 DDR2-1066 875ns

    Untitled

    Abstract: No abstract text available
    Text: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)


    Original     		PDF V58C2256 16Mbit DDR400 DDR333 DDR266

    Untitled

    Abstract: No abstract text available
    Text: V59C1G02168QBP HIGH PERFORMANCE 2Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 16 3 25A 25 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time tCK3 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns Clock Cycle Time (tCK5) 3ns 3ns 2.5ns Clock Cycle Time (tCK6) 3ns 2.5ns


    Original     		PDF V59C1G02168QBP 16Mbit DDR2-667 DDR2-800 V59C1G02168QBP

    AxC11

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.


    OCR Scan     		PDF DG3R58b 16Mbit bM27S25 AxC11

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7


    OCR Scan     		PDF HYB39S16160CT-6/-7 16MBit

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		PDF HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    DIP42-P-600-2

    Abstract: MR27V1602D
    Text: O K I Semiconductor MR27V1602D_ Preliminary 1A 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM_ DESCRIPTION The MR27V1602D is a 16Mbit electrically Program mable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27


    OCR Scan     		PDF MR27V1602D 576-Word 16-Bit 152-Word 16Mbit 16bit V1602D MR27V1602 DIP42-P-600-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as


    OCR Scan     		PDF TC5816ADC 16Mbit TC5816 NV16030496

    Untitled

    Abstract: No abstract text available
    Text: mosaic 512Kx 32 SRAM MODULE semiconductor, inc. SYS32512ZK/LK - 020/025/30/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS32512ZK/LK is plastic 16Mbit Static RAM Module housed in a 72 pin plastic SIMM, ZIP


    OCR Scan     		PDF 512Kx SYS32512ZK/LK 16Mbit

    Untitled

    Abstract: No abstract text available
    Text: mosaic 2M x 8 SRAM MODULE semiconductor, inc. SYS82000FK - 020/025/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue 1.1 : February 1999 Fax No: (619) 674 2230 Description Features The SYS82000FK is a plastic 16Mbit Static RAM


    OCR Scan     		PDF SYS82000FK 16Mbit 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: 512K x 32 SRAM MEMORY semiconductor, inc. PUMA 68SV16000X - 015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.1 : December 1998 Features Description The PU M A68SV16000X is a low voltage (3.3V) 16Mbit


    OCR Scan     		PDF 68SV16000X A68SV16000X 16Mbit